US5262353A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming a structure which electrically shields conductors
Assignee: NXP USA Inc
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Filing: 1992-02-03
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Granted: 1993-11-16
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Expires: 2012-02-03
Abstract
Abstract A shielding structure (10) and method of formation. The shielding structure (10) has a substrate (12). A first dielectric layer (14) overlies the substrate (12). A conductive layer (16) is formed overlying the dielectric layer (14), is patterned, and is etched to form electrically isolated conductive regions from conductive layer (16). The electrically isolated conductive regions have sidewalls and the etching of conductive layer (16) exposes portions of dielectric layer (14). The exposed portions of dielectric layer (14) are etched to form trenched portions of dielectric layer (14). A second dielectric layer (18) is formed overlying the electrically isolated conductive regions, including the sidewalls, and overlying the trenched portions to create recessed regions that separate the electrically isolated conductive regions. A shielding conductive layer (20) is formed overlying dielectric layer (18) and at least partially fills the recessed regions to shield the electrically isolated conductive regions from each another.
Inventors
- 👤 Shih-Wei Sun
- 👤 Yasunobu Kosa
- 👤 John R. Yeargain
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:38
CPC Classifications
H; H10; H10W; H10W42/00; H10W20/00; H10W20/40; H10W20/41; H10W20/423; H10W42/20; Y; Y10; Y10S; Y10S438/00; Y10S438/901
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
173 words
A process for forming a structure for shielding, comprising the steps of: providing a substrate; forming a first dielectric layer overlying the substrate; forming a first conductive layer of material overlying the first dielectric layer; removing portions of the first conductive layer to form a first conductive region having a first conductive region sidewall and a second conductive region having a second conductive region sidewall, the removing also forming exposed regions of the first dielectric layer; removing the exposed regions of the first dielectric layer to form trenched portions of the first dielectric layer; forming a second dielectric layer overlying the electrically isolated conductive regions, the first conductive region sidewall, the first conductive region sidewall, and the trenched portions of the first dielectric layer to establish recessed regions from the trenched portions that separate the electrically isolated conductive regions; and forming a shielding conductive layer overlying the second dielectric layer including within the recessed regions, the shielding conductive layer being used to electrically isolate the first conductive region from the second conductive region.
Claim 2
Dependent Claim
173 words
A process for forming a structure for shielding, comprising the steps of: providing a substrate; forming a first dielectric layer overlying the substrate; forming a first conductive layer of material overlying the first dielectric layer; removing portions of the first conductive layer to form a first conductive region having a first conductive region sidewall and a second conductive region having a second conductive region sidewall, the removing also forming exposed regions of the first dielectric layer; removing the exposed regions of the first dielectric layer to form trenched portions of the first dielectric layer; forming a second dielectric layer overlying the electrically isolated conductive regions, the first conductive region sidewall, the first conductive region sidewall, and the trenched portions of the first dielectric layer to establish recessed regions from the trenched portions that separate the electrically isolated conductive regions; and forming a shielding conductive layer overlying the second dielectric layer including within the recessed regions, the shielding conductive layer being used to electrically isolate the first conductive region from the second conductive region.
Claim 3
Dependent Claim
36 words
The process of claim 1 wherein the step of removing portions of the first dielectric layer further comprises using an anisotropic etch to form the trenched portions of the first dielectric layer with nearly vertical sidewalls.
Claim 4
Dependent Claim
51 words
The process of claim 1 wherein the step of removing portions of the first dielectric layer further comprises using an isotropic etch to form the trenched portions of the first dielectric layer, the trenched portions being etched laterally outward to expose portions of a bottom surface of the first conductive layer.
Claim 5
Dependent Claim
27 words
The process of claim 1 wherein the steps of forming the first conductive layer and the shielding conductive layer further comprise forming each as a polysilicon layer.
Claim 6
Dependent Claim
30 words
The process of claim 1 wherein the steps of forming the first conductive layer and the shielding conductive layer further comprise forming each as a material which comprises a metal.
Claim 7
Dependent Claim
37 words
The process of claim 1 wherein the steps of forming the first conductive layer and the shielding conductive layer further comprise forming the first conductive layer of polysilicon and forming the shielding layer of a metal material.
Claim 8
Dependent Claim
168 words
A process for forming a shielded structure, comprising the steps of: providing a silicon substrate; depositing a first dielectric layer overlying the silicon substrate; depositing a first metal layer of material overlying the first dielectric layer; etching portions of the first metal layer to form electrically isolated metal regions having sidewalls, the removal also forming exposed regions of the first dielectric layer; anisotropically etching the exposed regions of the first dielectric layer to form trenched portions of the first dielectric layer; depositing a second dielectric layer conformally overlying the electrically isolated metal regions, the sidewalls of the electrically isolated metal regions, and the trenched portions of the first dielectric layer to establish recessed regions from the trenched portions, the recessed regions separating the electrically isolated metal regions; and depositing a shielding metal layer overlying the second dielectric layer including within the recessed regions, the shielding metal layer being coupled to a conductor for providing a fixed voltage supply which enhances electrical isolation of the electrically isolated metal regions.
Claim 9
Dependent Claim
168 words
A process for forming a shielded structure, comprising the steps of: providing a silicon substrate; depositing a first dielectric layer overlying the silicon substrate; depositing a first metal layer of material overlying the first dielectric layer; etching portions of the first metal layer to form electrically isolated metal regions having sidewalls, the removal also forming exposed regions of the first dielectric layer; anisotropically etching the exposed regions of the first dielectric layer to form trenched portions of the first dielectric layer; depositing a second dielectric layer conformally overlying the electrically isolated metal regions, the sidewalls of the electrically isolated metal regions, and the trenched portions of the first dielectric layer to establish recessed regions from the trenched portions, the recessed regions separating the electrically isolated metal regions; and depositing a shielding metal layer overlying the second dielectric layer including within the recessed regions, the shielding metal layer being coupled to a conductor for providing a fixed voltage supply which enhances electrical isolation of the electrically isolated metal regions.
Claim 10
Dependent Claim
28 words
The process of claim 7 wherein the step of depositing the first metal layer further comprises forming a portion of the first metal layer as a silicide material.
Claim 11
Dependent Claim
30 words
The process of claim 7 wherein the step of depositing the shielding metal layer further comprises forming at least a portion of the shielding metal layer from a silicide material.
Claim 12
Dependent Claim
120 words
In a semiconductor device, a method for electrically isolating a plurality of physically separated conductive regions, which are separated from each other by recessed regions comprising the steps of: providing a substrate; forming said plurality of physically separated conductive regions overlying the substrate, a selected one of said recessed regions being located between each conductive region in the plurality of physically separated conductive regions; forming a dielectric isolation layer over the plurality of physically separated conductive regions and at least partially within the recessed regions; and forming a contiguous conductive shielding layer both overlying the dielectric isolation layer and within the recessed regions, the contiguous conductive shielding layer being used to reduce electrical coupling between adjacent physically separated conductive regions.
Claim 13
Dependent Claim
120 words
In a semiconductor device, a method for electrically isolating a plurality of physically separated conductive regions, which are separated from each other by recessed regions comprising the steps of: providing a substrate; forming said plurality of physically separated conductive regions overlying the substrate, a selected one of said recessed regions being located between each conductive region in the plurality of physically separated conductive regions; forming a dielectric isolation layer over the plurality of physically separated conductive regions and at least partially within the recessed regions; and forming a contiguous conductive shielding layer both overlying the dielectric isolation layer and within the recessed regions, the contiguous conductive shielding layer being used to reduce electrical coupling between adjacent physically separated conductive regions.
Claim 14
Dependent Claim
27 words
The method of claim 10 wherein the step of forming the contiguous conductive shielding layer comprises: biasing the contiguous conductive shielding layer to a fixed supply voltage.
Claim 15
Dependent Claim
33 words
The method of claim 10 wherein the step of forming said plurality of physically separated conductive regions comprises forming the plurality of physically separated conductive regions as a material which comprises a metal.
Claim 16
Independent Claim
120 words
A method for isolating at least two physically separated conductive regions, comprising the steps of: providing a substrate material; forming a plurality of transistors overlying the substrate material; forming a dielectric layer overlying the plurality of transistors; forming said conductive regions overlying the dielectric layer, the conductive regions having a first region which is physically separated from a second region; defining recessed regions which separate each of the conductive regions; forming an isolation layer both overlying the conductive regions and within the recessed regions; forming a contiguous conductive layer overlying each of the conductive regions to reduce capacitive coupling between the first region and the second region when a substantially constant magnitude voltage is applied to said contiguous conductive layer.
Claim 17
Independent Claim
120 words
A method for isolating at least two physically separated conductive regions, comprising the steps of: providing a substrate material; forming a plurality of transistors overlying the substrate material; forming a dielectric layer overlying the plurality of transistors; forming said conductive regions overlying the dielectric layer, the conductive regions having a first region which is physically separated from a second region; defining recessed regions which separate each of the conductive regions; forming an isolation layer both overlying the conductive regions and within the recessed regions; forming a contiguous conductive layer overlying each of the conductive regions to reduce capacitive coupling between the first region and the second region when a substantially constant magnitude voltage is applied to said contiguous conductive layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-11-15 | 1997-05-17 | 1997-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-15 | 2001-05-17 | 2001-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-15 | 2005-05-17 | 2005-11-16 | $7700.00 | Window Closed / Lapsed |