Patent US5262282A successfully refreshed from Google Patents.
US5262282A
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Pattern forming method
Assignee: Toshiba Corp
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Filing: 1992-07-02
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Granted: 1993-11-16
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Expires: 2012-07-02
Abstract
Abstract A pattern forming method of a resist to be used in the manufacturing process of a semiconductor device. The desired area of a resist film is made hydrophilic by an exposure and a mask material is precipitated and deposited on the area of resist film made hydrophilic in the solution. The patterning of resist film is thus carried out, and a pattern of high reliability is formed. After exposure, by silylizing or baking the resist film, a pattern of higher reliability is formed. Furthermore, after patterning of the resist film, the precipitation and deposition of the mask material are carried out again, and a reversed pattern of high reliability is formed by eliminating the resist film made with patterning by the lift-off process.
Inventors
- 👤 Katsuhiko Hieda
- 👤 Iwao Higashikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:21
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; G; G03; G03F; G03F7/00; G03F7/004; G03F7/038; G03F7/26; G03F7/265; G03F7/38; H10P14/00; H10P14/60; H10P50/00; H10P50/71
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
64 words
A pattern forming method, comprising the steps of: coating a hydrophobic resist film on a substrate; exposing the resist film to a prescribed pattern causing an exposed region to become hydrophilic; selectively extracting and depositing a silicon oxide film from a silica liquid solution on the hydrophilic region of the substrate; and etching the resist film using the silicon oxide film as a mask.
Claim 2
Dependent Claim
64 words
A pattern forming method, comprising the steps of: coating a hydrophobic resist film on a substrate; exposing the resist film to a prescribed pattern causing an exposed region to become hydrophilic; selectively extracting and depositing a silicon oxide film from a silica liquid solution on the hydrophilic region of the substrate; and etching the resist film using the silicon oxide film as a mask.
Claim 3
Dependent Claim
17 words
The pattern forming method of claim 1, wherein the liquid solution is a supersaturated solution containing silica.
Claim 4
Dependent Claim
22 words
The pattern forming method of claim 1, wherein the exposure is carried out by using ultraviolet rays, X rays or electron beam.
Claim 5
Dependent Claim
18 words
The pattern forming method of claim 1, wherein the resist film includes a resin with acid anhydride structure.
Claim 6
Dependent Claim
22 words
The pattern forming method of claim 1, wherein the resist film includes a methacrylic acid anhydride resin or acrylic acid anhydride resin.
Claim 7
Dependent Claim
16 words
The pattern forming method of claim 1, wherein the resist film includes a novolac series resin.
Claim 8
Dependent Claim
78 words
A pattern forming method, comprising the steps of: coating a hydrophobic resist film on a substrate; exposing the resist film to a prescribed pattern causing an exposed region to become hydrophilic; silylizing the exposed region by a silicon compound gas and promoting a hydrophilic implementation; selectively extracting and depositing a silicon oxide film from a silica liquid solution on the hydrophilic region of the substrate; and etching the resist film using the silicon oxide film as a mask.
Claim 9
Dependent Claim
78 words
A pattern forming method, comprising the steps of: coating a hydrophobic resist film on a substrate; exposing the resist film to a prescribed pattern causing an exposed region to become hydrophilic; silylizing the exposed region by a silicon compound gas and promoting a hydrophilic implementation; selectively extracting and depositing a silicon oxide film from a silica liquid solution on the hydrophilic region of the substrate; and etching the resist film using the silicon oxide film as a mask.
Claim 10
Dependent Claim
16 words
The pattern forming method of claim 7, wherein the solution is a supersaturated solution containing silica.
Claim 11
Dependent Claim
22 words
The pattern forming method of claim 7, wherein the exposure is carried out by using ultraviolet rays, X rays or electron beam.
Claim 12
Dependent Claim
18 words
The pattern forming method of claim 7, wherein the resist film includes a resin with acid anhydride structure.
Claim 13
Dependent Claim
23 words
The pattern forming method of claim 7, wherein the resist film includes a methacrylic acid anhydride resin or an acrylic acid anhydride resin.
Claim 14
Dependent Claim
16 words
The pattern forming method of claim 7, wherein the resist film includes a novolac series resin.
Claim 15
Dependent Claim
58 words
A pattern forming method, comprising: coating a hydrophobic resist film on a substrate; exposing the resist film to a prescribed pattern causing an exposed region to become hydrophilic; baking the substrate; selectively extracting and depositing an oxide film from a silica solution on the hydrophilic region of the substrate; and etching the resist film using the oxide film.
Claim 16
Dependent Claim
58 words
A pattern forming method, comprising: coating a hydrophobic resist film on a substrate; exposing the resist film to a prescribed pattern causing an exposed region to become hydrophilic; baking the substrate; selectively extracting and depositing an oxide film from a silica solution on the hydrophilic region of the substrate; and etching the resist film using the oxide film.
Claim 17
Dependent Claim
16 words
The pattern forming method of claim 13, wherein the solution is a supersaturated solution containing silica.
Claim 18
Dependent Claim
22 words
The pattern forming method of claim 13, wherein the exposure is carried out by using ultraviolet rays, X rays or electron beam.
Claim 19
Dependent Claim
18 words
The pattern forming method of claim 13, wherein the resist film includes a resin with acid anhydride structure.
Claim 20
Dependent Claim
22 words
The pattern forming method of claim 13, wherein the resist film includes a methacrylic acid anhydride resin or acrylic acid anhydride resin.
Claim 21
Dependent Claim
16 words
The pattern forming method of claim 13, wherein the resist film includes a novolac series resin.
Claim 22
Dependent Claim
111 words
A pattern forming method, comprising: coating a hydrophobic resist film on a substrate having a silicon layer thereon; exposing the resist film to a prescribed pattern causing an exposed region to become hydrophilic; selectively extracting and depositing a first mask material from a liquid solution on the hydrophilic region of the substrate; etching the resist film using the first mask material and exposing a part of the silicon layer on the surface of the substrate; selectively extracting and depositing from the solution a second mask material on the exposed silicon layer; and selectively removing the resist film by a lift-off process and patterning the silicon layer using the second mask material.
Claim 23
Dependent Claim
111 words
A pattern forming method, comprising: coating a hydrophobic resist film on a substrate having a silicon layer thereon; exposing the resist film to a prescribed pattern causing an exposed region to become hydrophilic; selectively extracting and depositing a first mask material from a liquid solution on the hydrophilic region of the substrate; etching the resist film using the first mask material and exposing a part of the silicon layer on the surface of the substrate; selectively extracting and depositing from the solution a second mask material on the exposed silicon layer; and selectively removing the resist film by a lift-off process and patterning the silicon layer using the second mask material.
Claim 24
Dependent Claim
16 words
The pattern forming method of claim 19, wherein the solution is a supersaturated solution containing silica.
Claim 25
Dependent Claim
23 words
The pattern forming method of claim 19, wherein the resist film includes a methacrylic acid anhydride resin and an acrylic acid anhydride resin.
Claim 26
Dependent Claim
16 words
The pattern forming method of claim 19, wherein the resist film includes a novolac series resin.
References Cited (Backward Citations)
US4751170A
Cited
US4999280A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-11-15 | 1997-05-17 | 1997-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-15 | 2001-05-17 | 2001-11-16 | $3760.00 | Window Closed / Lapsed |
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