Optoelectronic device with integrated optical guide and photo-detector.

Claim 1

Optoelectronic device with an integrated optical guide and photodetector comprising, on the same semiconductor substrate (S), an optical guide constituted by a first layer called the lower confinement layer (CIC), a second layer called the guide layer (CG), a third layer called the upper confinement layer (CSC), said layers being laterally etched in order to form a guide ribbon (RG) and a mesa-shaped photodetector (PHD) placed above the upper confinement layer (CSC), said photodetector particularly comprising a fourth layer called the absorbent layer (CA) able to absorb radiation from the guide layer (CG) by evanescence through the upper confinement layer (CSC), said device being characterized in that, in the zone located below the photodetector (PHD), at least the lower confinement layer (CIC) is removed, so that the guide layer (CG) is at least partly in contact with the air below the absorbent layer (CA).