US5259883A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of thermally processing semiconductor wafers and an apparatus therefor
Assignee: Toshiba Corp
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Filing: 1993-03-05
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Granted: 1993-11-09
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Expires: 2013-03-05
Abstract
Abstract An apparatus for thermally processing semiconductor wafers within a reaction tube in which the wafers are thermally processed in a higher temperature region within the reaction tube. The thermally processed semiconductor waters are moved into a lower temperature region within the reaction tube. The rate of heat radiated from the thermally processed semiconductor waters is reduced in the lower temperature region within the reaction tube.
Inventors
- 👤 Kikuo Yamabe
- 👤 Katsuya Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:42
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0436; C; C23; C23C; C23C16/00; C23C16/44; C23C16/46; C30; C30B; C30B33/00; F; F27; F27D; F27D15/00; F27D15/02
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
123 words
A semiconductor wafer thermal processing apparatus comprising: a reaction tube having an opening at one side of said reaction tube for inserting said semiconductor wafers; a heater provided only at a heating portion of said reaction tube, said heating portion of said reaction tube separated from said opening of said reaction tube; and means for reducing the rate of heat radiation out of a cooling portion of said reaction tube, said cooling portion of said reaction tube being near said opening of said reaction tube said reducing means including: a reflector provided at said cooling portion of said reaction tube for controlling said rate at which said semiconductor wafers are cooled and excluding a heater in said cooling portion of said reaction tube.
Claim 2
Dependent Claim
123 words
A semiconductor wafer thermal processing apparatus comprising: a reaction tube having an opening at one side of said reaction tube for inserting said semiconductor wafers; a heater provided only at a heating portion of said reaction tube, said heating portion of said reaction tube separated from said opening of said reaction tube; and means for reducing the rate of heat radiation out of a cooling portion of said reaction tube, said cooling portion of said reaction tube being near said opening of said reaction tube said reducing means including: a reflector provided at said cooling portion of said reaction tube for controlling said rate at which said semiconductor wafers are cooled and excluding a heater in said cooling portion of said reaction tube.
Claim 3
Dependent Claim
38 words
The apparatus of claim 1, further comprising an outer tube surrounding said heating portion of said reaction tube and separating said heater from said reaction tube for allowing gas to pass between said heater and said reaction tube.
Claim 4
Dependent Claim
13 words
The apparatus of claim 1, wherein said reaction tube is made of quartz.
Claim 5
Dependent Claim
14 words
The apparatus of claim 1, wherein said heater is wound around said reaction tube.
Claim 6
Dependent Claim
13 words
The apparatus of claim 4, further comprising heat insulation means, surrounding said heater.
Claim 7
Dependent Claim
28 words
The apparatus of claim 4, further comprising heat distributing tube means between said reaction tube and said heater, for evening the distribution of heat along said reaction tube.
Claim 8
Dependent Claim
13 words
The apparatus of claim 6, further comprising heat insulation means, surrounding said heater.
Claim 9
Dependent Claim
16 words
The apparatus of claim 6, wherein said heat distributing tube means is made of silicon carbide.
Claim 10
Dependent Claim
29 words
The apparatus of claim 1, wherein said reflector includes a reflecting tube surrounding said reaction tube, said tube having a heat reflecting face on the inner circumferential surface thereof.
Claim 11
Dependent Claim
14 words
The apparatus of claim 9, wherein said heat reflecting face has a mirror finish.
Claim 12
Dependent Claim
22 words
The apparatus of claim 9, wherein said reaction tube and said reflecting tube surrounding said reaction tube are both made of quartz.
Claim 13
Dependent Claim
16 words
The apparatus of claim 9, wherein said heat reflecting face is formed by a metallic film.
Claim 14
Dependent Claim
13 words
The apparatus of claim 12, wherein said metallic film is made of gold.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-08 | 1997-05-10 | 1997-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-08 | 2001-05-10 | 2001-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-08 | 2005-05-10 | 2005-11-09 | $7700.00 | Window Closed / Lapsed |