Abstract A semiconductor device fabricating method removes bird's head formed in the edges of a SiO 2 film formed by a recessed LOCOS process in fabricating a semiconductor device. The semiconductor device fabricating method comprises steps of forming device isolating regions (6) on a silicon substrate (1) by a recessed LOCOS process, forming an insulating film (10) over the entire surface of the work, and simultaneously forming contacts of a polycrystalline silicon film (15) between the device isolating regions (6) and resistors of the polycrystalline silicon film (15) over the device isolating regions (6). Portions of the polycrystalline silicon film (15) corresponding to the bird's heads in the edges of the insulating film (10) are removed selectively, and exposed portions of the insulating film (10) and the bird's heads in the device isolating regions (6) are removed sequentially by etching to flatten the surface of the work.
A semiconductor device fabricating method comprising steps of: forming device isolating regions on a silicon substrate by a recessed LOCOS process; forming an insulating layer over the entire surface; and simultaneously forming contacts of a polycrystalline silicon film between the device isolating regions and forming resistors of the polycrystalline silicon film over the device isolating regions; wherein the portions of the polycrystalline silicon film corresponding protrusions formed in the edges of the device isolating regions are removed selectively, exposed portions of the insulating layer and the protrusions formed in the edges of the device isolating regions are removed sequentially by etching, using the polycrystalline silicon film as a mask.
Claim 2
Dependent Claim
109 words
A semiconductor device fabricating method comprising steps of: forming device isolating regions on a silicon substrate by a recessed LOCOS process; forming an insulating layer over the entire surface; and simultaneously forming contacts of a polycrystalline silicon film between the device isolating regions and forming resistors of the polycrystalline silicon film over the device isolating regions; wherein the portions of the polycrystalline silicon film corresponding protrusions formed in the edges of the device isolating regions are removed selectively, exposed portions of the insulating layer and the protrusions formed in the edges of the device isolating regions are removed sequentially by etching, using the polycrystalline silicon film as a mask.