US5256248A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for patterning semiconductor
Assignee: SK Hynix Inc
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Filing: 1992-10-13
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Granted: 1993-10-26
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Expires: 2012-10-13
Abstract
Abstract A method for forming a fine pattern of a semiconductor element by using intermediate transcription layers. A layer to be transcribed is formed on a silicon substrate. A first intermediate transcription layer with a thickness of δ and a first mask layer are formed on the layer to be transcribed and are patterned to produce a line width of L and a line space of S, with S approximately equal L +2δ. A second intermediate transcription layer of the same material as the first intermediate transcription layer and with a thickness of δ is formed on the overall surface. A second mask layer with a substantially flattened surface is formed on the second intermediate transcription layer. The flattened second mask layer is etched back so as to expose a portion of the second intermediate transcription layer. A pattern is formed with the first and second intermediate transcription layers by partial isotropic etching of the intermediate transcription layers to produce a line width and line space of the intermediate transcription layers of approximately L/2 and S/2, respectively. The mask layers are removed, and an anisotropic dry etching of the layer to be transcribed is performed using the intermediate layers as a mask. The patterning is completed by removing the intermediate transcription layers.
Inventors
- 👤 Young-Kwon Jun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:36
CPC Classifications
G; G03; G03F; G03F7/00; H; H10; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/947
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
277 words
A method for patterning a layer on a semiconductor substrate comprising the steps of: forming the layer to be patterned on the silicon substrate; forming a first intermediate transcription layer on the layer to be patterned, the first intermediate transcription layer having a thickness of δ; forming a first mask layer on the first intermediate transcription layer, the first mask layer having a large etch rate selectivity difference from that of the first intermediate transcription layer; patterning the first mask layer and the first intermediate transcription layer to have a line width of L and a line space of S, where S is approximately equal to L+2δ; forming a second intermediate transcription layer with a thickness of approximately δ, the second intermediate transcription layer comprising the same material as the first intermediate transcription layer; forming a second mask layer having a substantially flattened surface, the second mask layer comprising the same material as the first mask layer; etching back the flattened second mask layer so as to expose a portion of the second intermediate transcription layer on the first mask layer; forming a pattern of the first and second intermediate transcription layers with a line width and a line space approximately equal to L/2 and S/2, respectively, by isotropic etching partially the first and second intermediate transcription layers; and removing the remaining portions of the first and second mask layers; transcribing the pattern of the first and second intermediate transcription layers to the layer to be patterned by anisotropic dry etching the layer to be patterned, wherein the first and second intermediate transcription layers serve as a mask; and removing the first and second intermediate transcription layers.
Claim 2
Independent Claim
277 words
A method for patterning a layer on a semiconductor substrate comprising the steps of: forming the layer to be patterned on the silicon substrate; forming a first intermediate transcription layer on the layer to be patterned, the first intermediate transcription layer having a thickness of δ; forming a first mask layer on the first intermediate transcription layer, the first mask layer having a large etch rate selectivity difference from that of the first intermediate transcription layer; patterning the first mask layer and the first intermediate transcription layer to have a line width of L and a line space of S, where S is approximately equal to L+2δ; forming a second intermediate transcription layer with a thickness of approximately δ, the second intermediate transcription layer comprising the same material as the first intermediate transcription layer; forming a second mask layer having a substantially flattened surface, the second mask layer comprising the same material as the first mask layer; etching back the flattened second mask layer so as to expose a portion of the second intermediate transcription layer on the first mask layer; forming a pattern of the first and second intermediate transcription layers with a line width and a line space approximately equal to L/2 and S/2, respectively, by isotropic etching partially the first and second intermediate transcription layers; and removing the remaining portions of the first and second mask layers; transcribing the pattern of the first and second intermediate transcription layers to the layer to be patterned by anisotropic dry etching the layer to be patterned, wherein the first and second intermediate transcription layers serve as a mask; and removing the first and second intermediate transcription layers.
Claim 3
Dependent Claim
16 words
The method of claim 1, wherein the first and second intermediate transcription layers comprise silicon nitride.
Claim 4
Dependent Claim
16 words
The method of claim 1, wherein the first and second mask layers comprise spin on glass.
Claim 5
Dependent Claim
27 words
The method of claim 1, wherein the first and second intermediate transcription layers comprise silicon nitride and the first and second mask layers comprise spin on glass.
Claim 6
Dependent Claim
54 words
The method of claim 1, wherein the step of forming the second mask layer comprises the steps of: forming a layer of material, the layer of material comprising the same material as the first mask layer; and flattening the layer of material, wherein a second mask layer having a substantially flattened surface is produced.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-10-25 | 1997-04-26 | 1997-10-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-25 | 2001-04-26 | 2001-10-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-25 | 2005-04-26 | 2005-10-26 | $7700.00 | Window Closed / Lapsed |