Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
194 words
A solid state image pickup device, comprising: at least one vertical register which includes: a transfer channel, a group of transfer electrodes driven by a vertical driving pulse and formed by crossing said transfer channel, said group of transfer electrodes including at least one first transfer electrode and at least one second transfer electrode, an intermediate layer of polysilicon formed along said transfer channel and over said group of transfer electrodes, an aluminum wiring layer formed along said transfer channel and over said intermediate layer of polysilicon, at least one first contact connecting electrically at least one transfer electrode of said group transfer electrodes and said intermediate layer of polysilicon, and at least one second contact connecting electrically said intermediate layer of polysilicon and said aluminum wiring layer, wherein for said at least one vertical register at least one said first contact is respectively formed over one of one said first transfer electrode and one said second transfer electrode and at least one said second contact is respectively formed over one of one of said first transfer electrode and one said second transfer electrode driven by a vertical driving pulse of the same phase.
Claim 2
Dependent Claim
194 words
A solid state image pickup device, comprising: at least one vertical register which includes: a transfer channel, a group of transfer electrodes driven by a vertical driving pulse and formed by crossing said transfer channel, said group of transfer electrodes including at least one first transfer electrode and at least one second transfer electrode, an intermediate layer of polysilicon formed along said transfer channel and over said group of transfer electrodes, an aluminum wiring layer formed along said transfer channel and over said intermediate layer of polysilicon, at least one first contact connecting electrically at least one transfer electrode of said group transfer electrodes and said intermediate layer of polysilicon, and at least one second contact connecting electrically said intermediate layer of polysilicon and said aluminum wiring layer, wherein for said at least one vertical register at least one said first contact is respectively formed over one of one said first transfer electrode and one said second transfer electrode and at least one said second contact is respectively formed over one of one of said first transfer electrode and one said second transfer electrode driven by a vertical driving pulse of the same phase.
Claim 3
Dependent Claim
34 words
A solid state image pickup device according to claim 1, wherein one said first contact and one said second contact are both formed over the same transfer electrode in said group of transfer electrodes.
Claim 4
Dependent Claim
34 words
A solid state image pickup device according to claim 1, wherein only either one said first contact or one said second contact is formed over one transfer electrode in said group of transfer electrodes.
Claim 5
Dependent Claim
58 words
A solid state image pickup device according to claim 3, wherein at least one said first contact and at least one said second contact for at least one vertical register are formed alternately with only one of either said first contact or said second contact being formed over any one transfer electrode in said group of transfer electrodes.
Claim 6
Dependent Claim
28 words
A solid state image pickup device according to any one of claims 1 through 4, wherein each transfer electrode of said group of transfer electrodes includes polysilicon, respectively.
Claim 7
Dependent Claim
31 words
A solid state image pickup device according to any one of claim 1 through 4, wherein said at least one vertical register is driven by one of four phased driving pulses.
Claim 8
Dependent Claim
26 words
A solid state image pickup device according to claim 5, wherein said at least one vertical register is driven by one of four phased driving pulses.