Patent US5254872A successfully refreshed from Google Patents.
US5254872A
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US
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Semiconductor device and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1991-03-21
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Granted: 1993-10-19
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Expires: 2011-03-21
Abstract
Abstract A semiconductor device having a reliable contact is disclosed. The device includes a barrier film deposited on the bottom and side wall of a contact hole opened in a insulating film at a predetermined position; a first metal film filled in the contact hole; and a second metal film of low resistance for forming an interconnection which passes above the contact hole filled in with the first metal film. An oxide film is formed by oxidation on the barrier metal film. And a method of manufacturing the semiconductor device is disclosed. The method includes the steps of: after opening a contact hole at a predetermined position in an insulating film deposited on a semiconductor substrate, forming a barrier film in the bottom and side wall of the contact hole; filling the contact hole with a first metal film while heating the semiconductor substrate at a predetermined temperature; and depositing a second metal film over the surface of the semiconductor device and patterning the second metal film to form an interconnection which passes the contact hole that has been filled in with the first metal film.
Inventors
- 👤 Takashi Yoda
- 👤 Tohru Watanabe
- 👤 Katsuya Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 14:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
129 words
A semiconductor device comprising: a substrate; an unsulating film deposited on the substrate at a predetermined position; a contact hole formed in said insulating film; a barrier metal film deposited on an entire bottom and an entire side wall of the contact hole, said barrier metal film having an oxide film of said barrier metal thereon; a first metal film filled in said contact hole, said first metal film having a good fluidity when it is deposited; and a second metal film of low resistance for forming an interconnection which passes above said contact hole filled in with said first metal film, said barrier metal film suppressing interaction between said first metal film and the insulating film and said oxide film improving its affinity for the first metal film.
Claim 2
Dependent Claim
129 words
A semiconductor device comprising: a substrate; an unsulating film deposited on the substrate at a predetermined position; a contact hole formed in said insulating film; a barrier metal film deposited on an entire bottom and an entire side wall of the contact hole, said barrier metal film having an oxide film of said barrier metal thereon; a first metal film filled in said contact hole, said first metal film having a good fluidity when it is deposited; and a second metal film of low resistance for forming an interconnection which passes above said contact hole filled in with said first metal film, said barrier metal film suppressing interaction between said first metal film and the insulating film and said oxide film improving its affinity for the first metal film.
Claim 3
Dependent Claim
22 words
A semiconductor device according to claim 1, wherein said first metal film is made of an alloy having a low melting point.
Claim 4
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein said barrier film is made of a film having a transition metal compound as its main component.
Claim 5
Dependent Claim
14 words
A semiconductor device according to claim 2, wherein said alloy having an aluminum-based alloy.
Claim 6
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said second metal film is made of an aluminum-silicon-copper-based alloy.
Claim 7
Dependent Claim
26 words
A semiconductor device according to claim 1, wherein said barrier metal film is composed of a transition metal film and nitride film of the transition metal.
Claim 8
Independent Claim
153 words
A method of manufacturing a semiconductor device comprising the steps of: opening a contact hole at a predetermined position in an insulating film deposited on a semiconductor substrate; forming a barrier metal film in the bottom and side wall of said contact hole; oxidizing the surface of the barrier metal film to form an oxide film thereon by heating in a mixed atmosphere of oxygen and nitrogen; filling said contact hole with a first metal film by sputtering method while heating said semiconductor substrate at a predetermined temperature; and depositing a second metal film over the surface of the semiconductor device and patterning said second metal film to form an interconnection which passes said contact hole that has been filled in with said first metal film; said barrier metal film suppressing interaction between said first meal film and the insulating film, and said oxide film improving its affinity for the first metal film.
Claim 9
Independent Claim
153 words
A method of manufacturing a semiconductor device comprising the steps of: opening a contact hole at a predetermined position in an insulating film deposited on a semiconductor substrate; forming a barrier metal film in the bottom and side wall of said contact hole; oxidizing the surface of the barrier metal film to form an oxide film thereon by heating in a mixed atmosphere of oxygen and nitrogen; filling said contact hole with a first metal film by sputtering method while heating said semiconductor substrate at a predetermined temperature; and depositing a second metal film over the surface of the semiconductor device and patterning said second metal film to form an interconnection which passes said contact hole that has been filled in with said first metal film; said barrier metal film suppressing interaction between said first meal film and the insulating film, and said oxide film improving its affinity for the first metal film.
Claim 10
Dependent Claim
26 words
A method of manufacturing a semiconductor device according to claim 7, wherein said step of forming a barrier metal film is performed by a sputtering method.
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