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US5254530A
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MOCVD of a-axis or b-axis oriented superconducting Bi-Sr-Ca-Cu-O films
Assignee: Fujikura Ltd
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Filing: 1992-06-18
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Granted: 1993-10-19
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Expires: 2012-06-18
Abstract
Abstract A Bi-Sr-Ca-Cu-O-type superconductive film is formed on an MgO (100) single crystal substrate by the chemical vapor deposition method at a film formation speed of 780° C. or less and a film formation speed of 1.0 nm/min or more, and exhibits an a-axis or b-axis preferential growth with respect to the substrate surface.
Inventors
- 👤 Tsunemi Sugimoto
- 👤 Kazushi Sugawara
- 👤 Mikio Nakagawa
- 👤 Yuh Shiohara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:06
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0436; H10N60/0464; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/93; Y10S505/00; Y10S505/725; Y10S505/73; Y10S505/734
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
108 words
A method of fabricating a Bi-Sr-Ca-Cu-O superconductive film comprising, forming a Bi-Sr-Ca-Cu-O superconductive film on an MgO (100) single crystal substrate by a chemical vapor deposition method at a substrate temperature of 780° C. or less and a film formation speed of 1.0 nm/min to 2.5 nm/min so that the Bi-Sr-Ca-Cu-O superconductive film consisting essentially of an a-axis or b-axis orientation with respect to a substrate surface is grown on the substrate, said chemical vapor deposition method including reaction gases of organometallic complexes of Bi, Sr, Ca and Cu, a carrier gas and an oxidizing gas, partial pressure of said oxidizing gas being from 1 to 10 torr.
Claim 2
Independent Claim
108 words
A method of fabricating a Bi-Sr-Ca-Cu-O superconductive film comprising, forming a Bi-Sr-Ca-Cu-O superconductive film on an MgO (100) single crystal substrate by a chemical vapor deposition method at a substrate temperature of 780° C. or less and a film formation speed of 1.0 nm/min to 2.5 nm/min so that the Bi-Sr-Ca-Cu-O superconductive film consisting essentially of an a-axis or b-axis orientation with respect to a substrate surface is grown on the substrate, said chemical vapor deposition method including reaction gases of organometallic complexes of Bi, Sr, Ca and Cu, a carrier gas and an oxidizing gas, partial pressure of said oxidizing gas being from 1 to 10 torr.
Claim 3
Dependent Claim
13 words
A method according to claim 1, wherein said Bi-Sr-Ca-Cu-O superconductive film contains Pb.
Claim 4
Dependent Claim
52 words
A method according to claim 1, wherein ligand of said organometallic complexes is at least one selected from the group consisting of acetylacetone, dipivaloylmethane, cyclopentadiene, and a compound as can be represented by the following formula: R--CO--CH.sub.2 --CO--C(CH.sub.3).sub.3 where R indicates a fluorinated lower alkyl group of a carbon number of 1˜4.
Claim 5
Dependent Claim
33 words
A method according to claim 3, wherein said fluorinated lower alkyl group represented by R in the above formula is selected from the group consisting of trifluoromethyl group, pentafluoroethyl group, and heptafluoropropyl group.
Claim 6
Dependent Claim
30 words
A method according to claim 1, wherein ligand of said complexes is at least one selected from the group consisting of phenyl group, methyl group, ethyl group and aryl group.
Claim 7
Dependent Claim
102 words
A method according to claim 1, wherein the organometallic complex of Bi is at least one selected from the group consisting of Bi(ph) 3 , Bi(DPM) 3 , BiMe 3 , BiEt 3 and Bi alcoholate, the organometallic complex of Sr is at least one selected from the group consisting of Sr(DPM) 2 and Sr(PPM) 2 , the organometallic complex of Ca is at least one selected from the group consisting of Ca(DPM) 2 and Ca(PPM) 2 , the organometallic complex of Cu is at least one selected from the group consisting of Cu(DPM) 2 , Cu(PPM) 2 and Cu(acac) 2 .
Claim 8
Dependent Claim
27 words
A method according to claim 1, wherein said carrier gas is at least one selected from the group consisting of Ar, He, Ne and N 2 .
Claim 9
Dependent Claim
34 words
A method according to claim 1, wherein said oxidizing gas is at least one selected from the group consisting of O 2 , O 3 , air, N 2 O and NO 2 .
Claim 10
Dependent Claim
25 words
A method according to claim 1, wherein the substrate temperature is 780° to 750° C. and the film formation speed is 1.0 to 2.0 nm/min.
Claim 11
Dependent Claim
19 words
A method according to claim 1, wherein the thickness of said Bi-Sr-Ca-Cu-O-type superconductive film is 100 to 1000 nm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-18 | 1997-04-19 | 1997-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-18 | 2001-04-19 | 2001-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-18 | 2005-04-19 | 2005-10-19 | $7700.00 | Window Closed / Lapsed |