US5250836A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having silicon-on-insulator structure
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1992-11-12
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Granted: 1993-10-05
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Expires: 2012-11-12
Abstract
Abstract A semiconductor device includes a first substrate made of a semiconductor, a first insulator layer which is formed on the first substrate, second substrate made of a semiconductor and formed on the first insulator layer, a trench which extends from a top surface of the second substrate to at least a part of the first insulator layer, and a second insulator layer which substantially defines a side wall of the trench.
Inventors
- 👤 Takao Miura
- 👤 Kazunori Imaoka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:21
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/061; H10W10/10; H10W10/181; H10W10/40; H10P90/1908; H10P90/1914; H10W10/011; H10W10/012; H10W10/13
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
130 words
A semiconductor device comprising: a first substrate made of a semiconductor; a first insulator layer which is formed on said first substrate; a second substrate made of a semiconductor and formed on said first insulator layer, said second substrate having a top surface; a trench which extends from the top surface of said second substrate into at least a part of said first insulator layer, said trench having a side wall on a vertical portion of said trench and having a bottom, said first insulator at the bottom of said trench being thinner than at other portions of said trench; and a second insulator layer which substantially defines the side wall on the vertical portion of said trench and contacts said first insulator layer at the bottom of said trench.
Claim 2
Dependent Claim
130 words
A semiconductor device comprising: a first substrate made of a semiconductor; a first insulator layer which is formed on said first substrate; a second substrate made of a semiconductor and formed on said first insulator layer, said second substrate having a top surface; a trench which extends from the top surface of said second substrate into at least a part of said first insulator layer, said trench having a side wall on a vertical portion of said trench and having a bottom, said first insulator at the bottom of said trench being thinner than at other portions of said trench; and a second insulator layer which substantially defines the side wall on the vertical portion of said trench and contacts said first insulator layer at the bottom of said trench.
Claim 3
Dependent Claim
29 words
The semiconductor device as claimed in claim 1, wherein said first and second semiconductor substrates are made of silicon and said first insulator layer is made of silicon dioxide.
Claim 4
Dependent Claim
18 words
The semiconductor device as claimed in claim 2, wherein said second insulator layer is made of silicon dioxide.
Claim 5
Dependent Claim
51 words
The semiconductor device as claimed in claim 1, wherein said semiconductor device further comprises a third insulator layer which substantially defines the bottom of said trench on a side of said first substrate, said second insulator layer defining the side wall of said trench on a side of said second substrate.
Claim 6
Dependent Claim
35 words
The semiconductor device as claimed in claim 4, wherein said first and second substrates are made of silicon, and said second and third insulator layers respectively are oxidized portions of said first and second substrates.
Claim 7
Dependent Claim
42 words
The semiconductor device as claimed in claim 4, which further comprises a filling material which fills the inside of said trench, and a fourth insulator layer which covers an exposed top of said filling material and connects to said second insulator layer.
Claim 8
Dependent Claim
60 words
The semiconductor device as claimed in claim 4, which further comprises a fourth insulator layer which covers the inside of said trench, a filling material which is formed on said fourth layer and fills the inside of said trench, and a fifth insulator layer which covers an exposed top of said filling material and connects to said fourth insulator layer.
Claim 9
Dependent Claim
72 words
The semiconductor device as claimed in claim 4, which further comprises a fourth insulator layer which covers the inside of said trench, a fifth insulator layer which is formed on said fourth insulator layer, a filling material which is formed on said fifth layer and fills the inside of said trench, and a sixth insulator layer which covers an exposed top of said filling material and connects to said fifth insulator layer.
Claim 10
Dependent Claim
21 words
The semiconductor device as claimed in claim 8, wherein said fourth and fifth insulator layers are made of mutually different materials.
Claim 11
Dependent Claim
69 words
The semiconductor device as claimed in claim 1, wherein said first insulator layer is made up of top and bottom insulator layers which are bonded together, said top insulator layer being initially formed on said second substrate, said bottom insulator layer being initially formed on said first substrate, said trench extending from the top surface of said second substrate to at least a part of said top insulator layer.
Claim 12
Dependent Claim
28 words
The semiconductor device as claimed in claim 10, wherein said trench extends from the top surface of said second substrate to a part of said bottom insulator layer.
Claim 13
Dependent Claim
28 words
The semiconductor device as claimed in claim 10, wherein said first and second substrates are made of silicon and said first insulator layer is made of silicon dioxide.
Claim 14
Dependent Claim
18 words
The semiconductor device as claimed in claim 12, wherein said second insulator layer is made of silicon dioxide.
Claim 15
Dependent Claim
91 words
The semiconductor device as claimed in claim 10, wherein said trench extends from the top surface of said second substrate to a part of said first substrate at a bottom part of said trench by penetrating the top and bottom insulator layers of said first insulator layer, and said semiconductor device further comprises a third insulator layer which substantially defines the bottom part of said trench on the side of said first substrate, said second insulator layer defining the side wall of said trench on the side of said second substrate.
Claim 16
Dependent Claim
35 words
The semiconductor device as claimed in claim 14, wherein said first and second substrates are made of silicon, and said second and third insulator layers respectively are oxidized portions of said first and second substrates.
Claim 17
Dependent Claim
42 words
The semiconductor device as claimed in claim 14, which further comprises a filling material which fills the inside of said trench, and a fourth insulator layer which covers an exposed top of said filling material and connects to said second insulator layer.
Claim 18
Dependent Claim
60 words
The semiconductor device as claimed in claim 14, which further comprises a fourth insulator layer which covers the inside of said trench, a filling material which is formed on said fourth layer and fills the inside of said trench, and a fifth insulator layer which covers an exposed top of said filling material and connects to said fourth insulator layer.
Claim 19
Dependent Claim
72 words
The semiconductor device as claimed in claim 14, which further comprises a fourth insulator layer which covers the inside of said trench, a fifth insulator layer which is formed on said fourth insulator layer, a filling material which is formed on said fifth layer and fills the inside of said trench, and a sixth insulator layer which covers an exposed top of said filling material and connects to said fifth insulator layer.
Claim 20
Dependent Claim
21 words
The semiconductor device as claimed in claim 18, wherein said fourth and fifth insulator layers are made of mutually different materials.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-04 | 1997-04-05 | 1997-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-04 | 2001-04-05 | 2001-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-04 | 2005-04-05 | 2005-10-05 | $7700.00 | Window Closed / Lapsed |