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US5250814A
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Semiconductor light-emitting devices
Assignee: Panasonic Holdings Corp
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Filing: 1992-06-04
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Granted: 1993-10-05
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Expires: 2012-06-04
Abstract
Abstract A semiconductor light-emitting device, such as LEDs AND laser diodes having emission wavelengths in a range which includes the blue to ultra-violet region of the spectrum are disclosed. The LED comprises a substrate and an p-n junction structure formed on the substrate, the p-n junction structure having first and second semiconductor layers, each consisting essentially of (Cu a Ag 1-a )(Al b Ga 1-b )(Se o S 1-o ) 2 , wherein 0≦a≦1, 0≦b≦1, and 0≦c≦1, the first semiconductor layer being doped with N, P, or As, the second semiconductor layer being doped with Zn, Cd, Cl, Br, or I. A semiconductor laser comprises a substrate and a double-hetero structure formed on the substrate, the double-hetero structure having: a p-type semiconductor layer, an active layer formed on the p-type semiconductor layer, and n-type semiconductor layer formed on the active layer, each of the p-type semiconductor layer and n-type semiconductor layer consisting essentially of (Cu a Ag 1-a )(Al b Ga 1-b )(Se o S 1-o ) 2 , wherein 0≦a≦1, 0≦b≦1, and 0≦c≦1, the active layer consisting essentially of (Zn d Cd 1-d )(Se m S n Te 1-m-n ), wherein 0≦d≦1, 0≦m≦1, 0≦n≦1, and m+n≦1.
Inventors
- 👤 Yoshio Morita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:41
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
106 words
A semiconductor light-emitting device comprising a substrate and an p-n junction structure formed on said substrate, said p-n junction structure having first and second semiconductor layers, each consisting essentially of (Cu a Ag 1-a )(Al b Ga 1-b )(Se c S 1-c ) 2 , wherein 0≦a≦1, 0≦b≦1, and 0≦c≦1, said first semiconductor layer being doped with one or more elements selected from a first group consisting of N, P, and As to be of a p-type, said second semiconductor layer being doped with one or more elements selected from a second group consisting of Zn, Cd, Cl, Br, and I to be of an n-type.
Claim 2
Dependent Claim
106 words
A semiconductor light-emitting device comprising a substrate and an p-n junction structure formed on said substrate, said p-n junction structure having first and second semiconductor layers, each consisting essentially of (Cu a Ag 1-a )(Al b Ga 1-b )(Se c S 1-c ) 2 , wherein 0≦a≦1, 0≦b≦1, and 0≦c≦1, said first semiconductor layer being doped with one or more elements selected from a first group consisting of N, P, and As to be of a p-type, said second semiconductor layer being doped with one or more elements selected from a second group consisting of Zn, Cd, Cl, Br, and I to be of an n-type.
Claim 3
Dependent Claim
21 words
A semiconductor light-emitting device as claimed in claim 1, wherein said substrate is in lattice matching with said p-n junction structure.
Claim 4
Dependent Claim
34 words
A semiconductor light-emitting device as claimed in claim 1, wherein said substrate is of an n-type and said second semiconductor layer and said first semiconductor layer are formed on said substrate in this order.
Claim 5
Dependent Claim
34 words
A semiconductor light-emitting device as claimed in claim 1, wherein said substrate is of a p-type and said first semiconductor layer and said second semiconductor layer are formed on said substrate in this order.
Claim 6
Dependent Claim
20 words
A semiconductor light-emitting device as claimed in claim 1, wherein said one element doped into said first semiconductor is N.
Claim 7
Dependent Claim
20 words
A semiconductor light-emitting device as claimed in claim 1, wherein said one element doped into said first semiconductor is P.
Claim 8
Dependent Claim
20 words
A semiconductor light-emitting device as claimed in claim 1, wherein said one element doped into said first semiconductor is As.
Claim 9
Dependent Claim
20 words
A semiconductor light-emitting device as claimed in claim 1, wherein said one element doped into said second semiconductor is Zn.
Claim 10
Dependent Claim
21 words
A semiconductor light-emitting device as claimed in claim 1, wherein said said one element doped into said second semiconductor is Cd.
Claim 11
Dependent Claim
21 words
A semiconductor light-emitting device as claimed in claim 1, wherein said said one element doped into said second semiconductor is Cl.
Claim 12
Dependent Claim
21 words
A semiconductor light-emitting device as claimed in claim 1, wherein said said one element doped into said second semiconductor is Br.
Claim 13
Dependent Claim
21 words
A semiconductor light-emitting device as claimed in claim 1, wherein said said one element doped into said second semiconductor is I.
Claim 14
Dependent Claim
97 words
A semiconductor light-emitting device comprising a substrate and a double-heterostructure formed on said substrate, said double-heterostructure having: a p-type semiconductor layer, an n-type semiconductor layer, and an active layer sandwiched between said p-type semiconductor layer and said n-type semiconductor layer, each of said p-type semiconductor layer and n-type semiconductor layer consisting essentially of (Cu a Ag 1-a )(Al b Ga 1-b ) (Se c S 1-c ) 2 , wherein 0≦a≦1, 0≦b≦1, and 0≦c≦1, said active layer consisting essentially of (Zn d Cd 1-d )(Se m S n Te 1-m-n ), wherein 0≦d≦1, 0≦m≦1, 0≦n≦1, and m+n≦1.
Claim 15
Dependent Claim
97 words
A semiconductor light-emitting device comprising a substrate and a double-heterostructure formed on said substrate, said double-heterostructure having: a p-type semiconductor layer, an n-type semiconductor layer, and an active layer sandwiched between said p-type semiconductor layer and said n-type semiconductor layer, each of said p-type semiconductor layer and n-type semiconductor layer consisting essentially of (Cu a Ag 1-a )(Al b Ga 1-b ) (Se c S 1-c ) 2 , wherein 0≦a≦1, 0≦b≦1, and 0≦c≦1, said active layer consisting essentially of (Zn d Cd 1-d )(Se m S n Te 1-m-n ), wherein 0≦d≦1, 0≦m≦1, 0≦n≦1, and m+n≦1.
Claim 16
Dependent Claim
19 words
A semiconductor light-emitting device as claimed in claim 13, wherein said substrate is in lattice matching with said double-heterostructure.
Claim 17
Dependent Claim
37 words
A semiconductor light-emitting device as claimed in claim 13, wherein said substrate is of an n-type and said n-type semiconductor layer, said active layer, and said p-type semiconductor layer are formed on said substrate in this order.
Claim 18
Dependent Claim
37 words
A semiconductor light-emitting device as claimed in claim 13, wherein said substrate is of a p-type and said p-type semiconductor layer, said active layer, and said n-type semiconductor layer are formed on said substrate in this order.
Claim 19
Dependent Claim
21 words
A semiconductor light-emitting device as claimed in claim 13, wherein said p-type semiconductor layer is made p-type by doping with As.
Claim 20
Dependent Claim
21 words
A semiconductor light-emitting device as claimed in claim 13, wherein said n-type semiconductor layer is made p-type by doping with Zn.
Claim 21
Dependent Claim
13 words
A semiconductor light-emitting device as claimed in claim 13, wherein 0.2≦ said m+n≦1.0.
References Cited (Backward Citations)
JPS60173893A
Cited
JPH01318273A
Cited
JPH0220086A
Cited
JPH02194564A
Cited
US5008891A
Cited
US5091758A
Cited
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