Chemical vapor growth apparatus having an exhaust device including trap

Claim 1

A chemical vapor growth apparatus comprising: a process chamber for carrying out a chemical vapor growth process; source gas introducing means for introducing at least one source gas to the process chamber from a gas source; source gas flow-rate control means for controlling the flow-rate of the source gas to be sent to the process chamber through the source gas introducing means; first exhaust means for exhausting the source gases remaining in the introducing means and in the source gas flow-rate control means, connected to the source gas introducing means and the source gas flow-rate control means; trap means for absorbing the source gas remaining in the source gas introducing means and the source gas flow-rate control means, provided in the first exhaust means; second exhaust means for exhausting gases and particles generated by chemical reaction from the process chamber, the second exhaust means being connected to the process chamber and to a vacuum pump; and purge gas introducing means connected to the source gas introducing means and the gas flow-rate control means for introducing a purge gas into the source gas introducing means and the gas flow-rate control means, and a valve and mass flow-rate control means for controlling the flow of purge gas, wherein the first and second exhaust means are separate exhaust means.

Claim 9

A method for growing a chemical vapor deposition layer on a semiconductor substrate, comprising the steps of: placing a semiconductor substrate in a process chamber for carrying out a chemical vapor growth process; introducing at least one source gas to the process chamber through a source gas introducing means, a flow rate of the at least one source gas being controlled by a source gas flow-rate control means through which the source gas is introduced; depositing a film on the semiconductor substrate from the at least one source gas; exhausting gases and particles generated by chemical reaction from the process chamber through a process chamber exhaust means, said process chamber exhaust means being connected to the process chamber and to a vacuum pump; and exhausting the at least one source gas remaining in the source gas introducing means and in the source gas flow-rate control means through a source gas exhaust means which is separate from the process chamber exhaust means and connected to the source gas introducing means and the source gas flow-rate control means, the source gas exhaust means including a trap means for absorbing the source gas remaining in the source gas introducing means and the source gas flow-rate control means, the exhausting being carried out by introducing a purge gas through a purge gas introducing means connected to the source gas introducing means and to the source gas flow-rate control means, wherein generation of particles in the source gas introducing means and the source gas flow-rate control means is prevented.

Claim 10

A method for growing a chemical vapor deposition layer on a semiconductor substrate, comprising the steps of: placing a semiconductor substrate in a process chamber for carrying out a chemical vapor growth process; introducing at least one source gas to the process chamber through a source gas introducing means, a flow rate of the at least one source gas being controlled by a source gas flow-rate control means through which the source gas is introduced; depositing a film on the semiconductor substrate from the at least one source gas; exhausting gases and particles generated by chemical reaction from the process chamber through a process chamber exhaust means, said process chamber exhaust means being connected to the process chamber and to a vacuum pump; and exhausting the at least one source gas remaining in the source gas introducing means and in the source gas flow-rate control means through a source gas exhaust means which is separate from the process chamber exhaust means and connected to the source gas introducing means and the source gas flow-rate control means, the source gas exhaust means including a trap means for absorbing the source gas remaining in the source gas introducing means and the source gas flow-rate control means, the exhausting being carried out by introducing a purge gas through a purge gas introducing means connected to the source gas introducing means and to the source gas flow-rate control means, wherein generation of particles in the source gas introducing means and the source gas flow-rate control means is prevented.