US5247193A
Expired / Lapsed
US
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Semiconductor insulated gate device with four electrodes
Assignee: Olympus Corp
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Filing: 1992-01-29
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Granted: 1993-09-21
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Expires: 2012-01-29
Abstract
Abstract A semiconductor device serving as a semiconductor light-emitting element, a semiconductor light-receiving element, or a transistor, includes a first semiconductor layer of a first conductivity type having an ohmic electrode on one surface thereof, a second semiconductor layer of a second conductivity type formed on the other surface of the first semiconductor layer, source and drain regions formed in a surface region of the second semiconductor layer, source and drain electrodes respectively formed on the source and drain regions, an insulating layer formed on the second semiconductor layer between the source and drain regions, and a gate electrode formed on the insulating layer.
Inventors
- 👤 Kazunori Menda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:48
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/052; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/2823; H10H29/00; H10H29/10
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
93 words
A semiconductor device comprising: a first semiconductor layer of a first conductivity type having an ohmic electrode on one surface thereof, a second semiconductor layer of a second conductivity type formed on another surface of said semiconductor layer, source and drain regions of the second conductivity type formed in a surface region of said second semiconductor layer, source and drain electrodes respectively formed on said source and drain regions, an insulating layer formed on said second semiconductor layer between said source and drain regions, and a gate electrode formed on said insulating layer.
Claim 2
Dependent Claim
93 words
A semiconductor device comprising: a first semiconductor layer of a first conductivity type having an ohmic electrode on one surface thereof, a second semiconductor layer of a second conductivity type formed on another surface of said semiconductor layer, source and drain regions of the second conductivity type formed in a surface region of said second semiconductor layer, source and drain electrodes respectively formed on said source and drain regions, an insulating layer formed on said second semiconductor layer between said source and drain regions, and a gate electrode formed on said insulating layer.
Claim 3
Dependent Claim
15 words
A device according to claim 1, wherein said semiconductor device is a semiconductor light-emitting element.
Claim 4
Dependent Claim
15 words
A device according to claim 1, wherein said semiconductor device is a semiconductor light-receiving element.
Claim 5
Dependent Claim
13 words
A device according to claim 1, wherein said semiconductor device is a transistor.
Claim 6
Dependent Claim
14 words
A device according to claim 1, wherein said semiconductor device is a light-emitting/light-receiving/transistor element.
Claim 7
Dependent Claim
149 words
A semiconductor device comprising: a semiconductor light-emitting element including a first semiconductor layer of a first conductivity type having an ohmic electrode on one surface thereof, a second semiconductor layer of a second conductivity type formed on another surface of said semiconductor layer, source and drain regions of the second conductivity type formed in a surface region of said second semiconductor layer, source and drain electrodes respectively formed on said source and drain regions, an insulating layer formed on said second semiconductor layer between said source and drain regions, and a gate electrode formed on said insulating layer; a semiconductor light-receiving element having the same structure as that of said semiconductor light emitting element; and a transistor having the same structure as those of said semiconductor light-emitting and light-receiving elements, and wherein said semiconductor light-emitting element, said semiconductor light-receiving element, and said transistor are formed on a single substrate.
Claim 8
Dependent Claim
149 words
A semiconductor device comprising: a semiconductor light-emitting element including a first semiconductor layer of a first conductivity type having an ohmic electrode on one surface thereof, a second semiconductor layer of a second conductivity type formed on another surface of said semiconductor layer, source and drain regions of the second conductivity type formed in a surface region of said second semiconductor layer, source and drain electrodes respectively formed on said source and drain regions, an insulating layer formed on said second semiconductor layer between said source and drain regions, and a gate electrode formed on said insulating layer; a semiconductor light-receiving element having the same structure as that of said semiconductor light emitting element; and a transistor having the same structure as those of said semiconductor light-emitting and light-receiving elements, and wherein said semiconductor light-emitting element, said semiconductor light-receiving element, and said transistor are formed on a single substrate.
Claim 9
Dependent Claim
22 words
A device according to claim 6, wherein said transistor is an amplification element for amplifying a signal from said semiconductor light-receiving element.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-09-20 | 1997-03-22 | 1997-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-20 | 2001-03-22 | 2001-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-20 | 2005-03-22 | 2005-09-21 | $7700.00 | Window Closed / Lapsed |