US5246291A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bond inspection technique for a semiconductor chip
Assignee: NXP USA Inc
•
Filing: 1992-06-01
•
Granted: 1993-09-21
•
Expires: 2012-06-01
Abstract
Abstract A bond inspection technique which determines the integrity of a plurality of package leads (13) bonded to a plurality of contact areas (12) on a semiconductor chip (11). A bonding process heats each package lead (13) bonded to each contact area (12). A camera (16) forms an infra-red intensity image at a predetermined time of the semiconductor chip (11) and ports image data to a computer (18). Infra-red intensity radiated from each bond on the semiconductor chip (11) is compared by the computer (18) with infra-red intensity data of known good and bad bonds. The comparison of each bond determines bond integrity of the semiconductor chip (11).
Inventors
- 👤 Christopher J. Lebeau
- 👤 Paul A. Ogden
- 👤 Shay-Ping T. Wang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 12:13
CPC Classifications
G; G01; G01N; G01N25/00; G01N25/72
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
147 words
A bond inspection technique for evaluating the bond interface between a plurality of leads bonded to respective contact pads on a semiconductor chip, comprising: initially heating the plurality of leads and bond interfaces to allow heat across the bond interfaces between the leads and the contact pads to be dissipated via the contact pads to the semiconductor chip; producing at least one thermal intensity map of the semiconductor chip using a camera sensitive to infra-red radiation, said at least one thermal intensity map being indicative of the heat transferred through the bond interfaces wherein the heat transfer is a function of the integrity of the bond interface itself; and inspecting said at least one thermal intensity map and comparing it against similar data at known good bond interfaces of a similar semiconductor chip to determine the quality of the bond interfaces of the semiconductor chip being evaluated.
Claim 2
Dependent Claim
147 words
A bond inspection technique for evaluating the bond interface between a plurality of leads bonded to respective contact pads on a semiconductor chip, comprising: initially heating the plurality of leads and bond interfaces to allow heat across the bond interfaces between the leads and the contact pads to be dissipated via the contact pads to the semiconductor chip; producing at least one thermal intensity map of the semiconductor chip using a camera sensitive to infra-red radiation, said at least one thermal intensity map being indicative of the heat transferred through the bond interfaces wherein the heat transfer is a function of the integrity of the bond interface itself; and inspecting said at least one thermal intensity map and comparing it against similar data at known good bond interfaces of a similar semiconductor chip to determine the quality of the bond interfaces of the semiconductor chip being evaluated.
Claim 3
Dependent Claim
23 words
The bond inspection technique of claim 1 wherein each bond to be evaluated on the semiconductor chip is heated to substantially similar temperatures.
Claim 4
Dependent Claim
30 words
The bond inspection technique of claim 1, wherein heating is by a laser and wherein each bond to be evaluated on the semiconductor chip is heated to substantially similar temperatures.
Claim 5
Dependent Claim
22 words
The bond inspection technique of claim 1, wherein a CCD camera is used having any infra-red filter removed from said CCD camera.
Claim 6
Dependent Claim
42 words
The bond inspection technique of claim 1, further including producing a plurality of thermal intensity maps using said camera, each thermal intensity map being generated at a different predetermined time to show a rate of change in heat transfer through each bond.
Claim 7
Independent Claim
125 words
A method for simultaneously characterizing a plurality of package lead bonds on a semiconductor chip comprising: initially heating a plurality of package leads and their respective bonds on the semiconductor chip for a predetermined time; placing the plurality of package leads and the semiconductor package in the field of view of a camera sensitive to infra-red radiation; generating a thermal intensity map of said plurality of package lead bonds and the semiconductor chip as heat is transferred therebetween from data output by said camera, said thermal intensity map indicating the heat transferred through each bond interface between said plurality of package leads and the semiconductor chip; and comparing said thermal intensity map to data of substantially similar semiconductor chips with known package lead bond conditions.
Claim 8
Independent Claim
125 words
A method for simultaneously characterizing a plurality of package lead bonds on a semiconductor chip comprising: initially heating a plurality of package leads and their respective bonds on the semiconductor chip for a predetermined time; placing the plurality of package leads and the semiconductor package in the field of view of a camera sensitive to infra-red radiation; generating a thermal intensity map of said plurality of package lead bonds and the semiconductor chip as heat is transferred therebetween from data output by said camera, said thermal intensity map indicating the heat transferred through each bond interface between said plurality of package leads and the semiconductor chip; and comparing said thermal intensity map to data of substantially similar semiconductor chips with known package lead bond conditions.
Claim 9
Dependent Claim
34 words
The method of claim 6 wherein initial heating comprises using heat generated during a bonding process for bonding the plurality of leads to the semiconductor chip to promote heat transfer through each bond interface.
Claim 10
Dependent Claim
31 words
The method of claim 6 wherein initial heating comprises: heating an area of the package leads near each bond interface with a laser to promote heat transfer through each bond interface.
Claim 11
Dependent Claim
18 words
The method of claim 6 further including: using a CCD camera with infra-red filters removed as said camera.
Claim 12
Dependent Claim
30 words
The method of claim 6 wherein the step of comparing comprises: comparing said thermal intensity map to data of substantially similar semiconductor chips with known bond conditions using a computer.
Claim 13
Dependent Claim
68 words
The method of claim 6 further including: generating a plurality of thermal intensity maps of the semiconductor chip from data output by said camera, each thermal intensity map being generated at a predetermined time; using said plurality of thermal intensity maps to show a rate of change of thermal intensity at each bond; and using said rate of change thermal intensity at each bond to determine bond quality.
Claim 14
Independent Claim
99 words
A method for inspecting the integrity of a plurality of package leads bonded to a semiconductor chip, comprising: focusing a camera sensitive to infra-red radiation on the plurality of package leads and the semiconductor chip; causing heat transfer through each bond interface between the plurality of leads and the semiconductor chip; generating a thermal intensity map of the semiconductor chip and leads fro data output from said camera, said thermal intensity map showing heat transferred through each bond interface; and inspecting and comparing said thermal intensity map against substantially similar semiconductor chip data with known package lead bond conditions.
Claim 15
Independent Claim
99 words
A method for inspecting the integrity of a plurality of package leads bonded to a semiconductor chip, comprising: focusing a camera sensitive to infra-red radiation on the plurality of package leads and the semiconductor chip; causing heat transfer through each bond interface between the plurality of leads and the semiconductor chip; generating a thermal intensity map of the semiconductor chip and leads fro data output from said camera, said thermal intensity map showing heat transferred through each bond interface; and inspecting and comparing said thermal intensity map against substantially similar semiconductor chip data with known package lead bond conditions.
Claim 16
Dependent Claim
29 words
The method of claim 12 wherein said causing heat transfer step includes using heat generated during a package lead bonding process to cause heat transfer through each bond interface.
Claim 17
Dependent Claim
35 words
The method of claim 12 wherein said causing heat transfer step includes heating an area of the plurality of package leads near each bond with a laser to cause heat transfer through each bond interface.
Claim 18
Dependent Claim
37 words
The method of claim 12 wherein said generating a thermal intensity map step includes generating a plurality of thermal intensity maps at predetermined times to determine a rate of change of heat transfer through each bond interface.
Claim 19
Dependent Claim
33 words
The method of claim 12 wherein said comparing and inspecting step includes using a computer to compare said thermal intensity map to substantially similar semiconductor chip data with known package lead bond conditions.
References Cited (Backward Citations)
US3803413A
Cited
JPS56142427A
Cited
JPS62126339A
Cited
JPS62127660A
Cited
JPS62282770A
Cited
US4792683A
Cited
US5052816A
Cited
US4999499A
Cited
US5064291A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-20 | 1997-03-22 | 1997-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-20 | 2001-03-22 | 2001-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-20 | 2005-03-22 | 2005-09-21 | $7700.00 | Window Closed / Lapsed |