Patent US5245157A successfully refreshed from Google Patents.
US5245157A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave plasma processing or semiconductor devices
Assignee: Fuji Electric Co Ltd
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Filing: 1991-03-11
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Granted: 1993-09-14
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Expires: 2011-03-11
Abstract
Abstract A plasma processing is performed using a plasma generation chamber into which is introduced a gas for generating plasma by a resonant effect between a microwave and a magnetic field. A processing chamber communicates with the plasma generation chamber and a single excitation solenoid disposed to surround the plasma generation chamber in a coaxial relationship therewith and movable relative to the plasma generation chamber. The processing includes generating plasma while controlling the magnitude of the electric current flowing through the single excitation solenoid to be in a range in which the density of the generated plasma is decreased with the increase of the current, and processing a specimen to be processed disposed within the processing chamber.
Inventors
- 👤 Kiyoshi Ohiwa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:41
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/3266; H01J37/32678
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
119 words
A method for operating a plasma processing apparatus which includes a plasma generation chamber into which is introduced a gas for generating plasma by a resonant effect between a microwave and a magnetic field, a processing chamber communicated with said plasma generation chamber, and a single excitation solenoid disposed to surround said plasma generation chamber in coaxial relationship therewith and movable relative to said plasma generation chamber, the method comprising: generating plasma while controlling the magnitude of an electric current flowing through said single excitation solenoid to be in a range in which the density of the generated plasma is decreased with an increase of said current; and processing a specimen to be processed disposed within said processing chamber.
Claim 2
Independent Claim
119 words
A method for operating a plasma processing apparatus which includes a plasma generation chamber into which is introduced a gas for generating plasma by a resonant effect between a microwave and a magnetic field, a processing chamber communicated with said plasma generation chamber, and a single excitation solenoid disposed to surround said plasma generation chamber in coaxial relationship therewith and movable relative to said plasma generation chamber, the method comprising: generating plasma while controlling the magnitude of an electric current flowing through said single excitation solenoid to be in a range in which the density of the generated plasma is decreased with an increase of said current; and processing a specimen to be processed disposed within said processing chamber.
Claim 3
Independent Claim
193 words
A method for operating a plasma processing apparatus which includes a plasma generation chamber into which is introduced a gas for generating plasma by a resonant effect between a microwave and a magnetic field, a processing chamber communicated with said plasma generation chamber, and a single excitation solenoid disposed to surround said plasma generation chamber in coaxial relationship therewith and movable relative to said plasma generation chamber, the method comprising: generating plasma while controlling the magnitude of an electric current flowing through said single excitation solenoid to be in a range in which the density of the generated plasma is decreased with an increase of said current; processing a specimen to be processed disposed within said processing chamber; varying the magnitude of said current flowing through said single excitation solenoid within said range; changing the position of said single excitation solenoid in the axial direction thereof, and repeating said processing of said specimen; repeating said steps of varying the magnitude of the current, changing the position of said single excitation solenoid and processing said specimen; determining the magnitude of said current and said position of said single excitation solenoid; and processing said specimen.
Claim 4
Independent Claim
193 words
A method for operating a plasma processing apparatus which includes a plasma generation chamber into which is introduced a gas for generating plasma by a resonant effect between a microwave and a magnetic field, a processing chamber communicated with said plasma generation chamber, and a single excitation solenoid disposed to surround said plasma generation chamber in coaxial relationship therewith and movable relative to said plasma generation chamber, the method comprising: generating plasma while controlling the magnitude of an electric current flowing through said single excitation solenoid to be in a range in which the density of the generated plasma is decreased with an increase of said current; processing a specimen to be processed disposed within said processing chamber; varying the magnitude of said current flowing through said single excitation solenoid within said range; changing the position of said single excitation solenoid in the axial direction thereof, and repeating said processing of said specimen; repeating said steps of varying the magnitude of the current, changing the position of said single excitation solenoid and processing said specimen; determining the magnitude of said current and said position of said single excitation solenoid; and processing said specimen.
Claim 5
Independent Claim
372 words
A method for operating a plasma processing apparatus including microwave generation means for generating microwaves, microwave transmission means for transmitting the microwaves generated by said microwave generation means, a plasma generation chamber communicated with said microwave transmission means, said plasma generation chamber having gas supply means for introducing gas into said plasma generation chamber and having an opening defined at an end portion thereof in an opposing relationship with said microwave transmission means, a single excitation solenoid movably disposed around said plasma generation chamber in a coaxial relationship therewith and for defining a magnetic field for generating a plasma of the gas introduced into said plasma generation chamber by a resonant effect with said microwaves, a processing chamber communicated with said plasma generation chamber through said opening and for processing a surface of a substrate disposed therein with said plasma, and displacing means for varying the position of said single excitation solenoid in an axial direction relative to said plasma generation chamber, the method comprising the steps of: (1) controlling a current flowing through said single excitation solenoid to form a resonance magnetic field which produces a plasma in a plasma density transition region, the transition region being between: a first resonance magnetic field region located in the vicinity of a center of said single excitation solenoid, said first resonance magnetic field region having a plasma generation efficiency which is relatively high and having a plasma density which is relatively higher in the vicinity of a central axis of said plasma generation chamber than in the vicinity of a circumferential wall of said plasma generation chamber; and a second resonance magnetic field region located away from said center of said single excitation solenoid towards an end of said single excitation solenoid, said second resonance magnetic field region having a plasma generation efficiency which is relatively low as compared with said first resonance magnetic field region and having a plasma density distribution which is relatively homogeneous in a radial direction as compared with said first resonance magnetic field region; (2) moving said resonance magnetic field forming said plasma density transition region to a predetermined optimal position relative to said plasma generation chamber; and (3) processing the surface of said substrate with said plasma.
Claim 6
Independent Claim
372 words
A method for operating a plasma processing apparatus including microwave generation means for generating microwaves, microwave transmission means for transmitting the microwaves generated by said microwave generation means, a plasma generation chamber communicated with said microwave transmission means, said plasma generation chamber having gas supply means for introducing gas into said plasma generation chamber and having an opening defined at an end portion thereof in an opposing relationship with said microwave transmission means, a single excitation solenoid movably disposed around said plasma generation chamber in a coaxial relationship therewith and for defining a magnetic field for generating a plasma of the gas introduced into said plasma generation chamber by a resonant effect with said microwaves, a processing chamber communicated with said plasma generation chamber through said opening and for processing a surface of a substrate disposed therein with said plasma, and displacing means for varying the position of said single excitation solenoid in an axial direction relative to said plasma generation chamber, the method comprising the steps of: (1) controlling a current flowing through said single excitation solenoid to form a resonance magnetic field which produces a plasma in a plasma density transition region, the transition region being between: a first resonance magnetic field region located in the vicinity of a center of said single excitation solenoid, said first resonance magnetic field region having a plasma generation efficiency which is relatively high and having a plasma density which is relatively higher in the vicinity of a central axis of said plasma generation chamber than in the vicinity of a circumferential wall of said plasma generation chamber; and a second resonance magnetic field region located away from said center of said single excitation solenoid towards an end of said single excitation solenoid, said second resonance magnetic field region having a plasma generation efficiency which is relatively low as compared with said first resonance magnetic field region and having a plasma density distribution which is relatively homogeneous in a radial direction as compared with said first resonance magnetic field region; (2) moving said resonance magnetic field forming said plasma density transition region to a predetermined optimal position relative to said plasma generation chamber; and (3) processing the surface of said substrate with said plasma.
Claim 7
Dependent Claim
61 words
The method according to claim 3, wherein the step of controlling a current flowing through said single excitation solenoid to form a resonance magnetic field which produces a plasma in a plasma density transition region comprises detecting electron density while varying said single excitation solenoid current to determine a point where plasma density decreases rapidly with an increase in solenoid current.
Claim 8
Dependent Claim
17 words
The method according to claim 4, wherein the step of detecting electron density comprises using a probe.
Claim 9
Dependent Claim
43 words
The method according to claim 3, wherein the step of moving the resonance magnetic field forming said plasma density transition region to a predetermined optimal position relative to said plasma generation chamber comprises mechanically moving said single excitation solenoid with said displacing means.
Claim 10
Dependent Claim
214 words
In a plasma processing apparatus for processing a semiconductor substrate, the apparatus having a plasma generation chamber communicating with a processing chamber for holding the substrate, a single excitation solenoid being disposed around the plasma generation chamber in a coaxial relationship therewith, and lift means for displacing said single excitation solenoid in a direction along an axis of said plasma generation chamber, a method for plasma processing the semiconductor substrate comprising: generating a gas plasma by flowing a gas into the plasma generation chamber, introducing microwave radiation into the plasma generation chamber, and flowing a current through the single excitation solenoid for defining a magnetic field, thereby generating a gas plasma by a resonant effect between the magnetic field and the microwave radiation; varying the current flowing through the single excitation solenoid to find a current range within which plasma density suddenly decreases with an increase in the current; displacing said single excitation solenoid in a direction along a central axis thereof to a desired position and fixing the position thereof; and extruding plasma from the plasma generation chamber and directing the plasma onto a surface of the semiconductor substrate held in the processing chamber while maintaining the current within the current range so that the plasma processes the surface of the semiconductor substrate.
Claim 11
Dependent Claim
214 words
In a plasma processing apparatus for processing a semiconductor substrate, the apparatus having a plasma generation chamber communicating with a processing chamber for holding the substrate, a single excitation solenoid being disposed around the plasma generation chamber in a coaxial relationship therewith, and lift means for displacing said single excitation solenoid in a direction along an axis of said plasma generation chamber, a method for plasma processing the semiconductor substrate comprising: generating a gas plasma by flowing a gas into the plasma generation chamber, introducing microwave radiation into the plasma generation chamber, and flowing a current through the single excitation solenoid for defining a magnetic field, thereby generating a gas plasma by a resonant effect between the magnetic field and the microwave radiation; varying the current flowing through the single excitation solenoid to find a current range within which plasma density suddenly decreases with an increase in the current; displacing said single excitation solenoid in a direction along a central axis thereof to a desired position and fixing the position thereof; and extruding plasma from the plasma generation chamber and directing the plasma onto a surface of the semiconductor substrate held in the processing chamber while maintaining the current within the current range so that the plasma processes the surface of the semiconductor substrate.
Claim 12
Dependent Claim
35 words
The method as claimed in claim 7, wherein said displacing and fixing at a desired position step is performed in accordance with an observed result of processing performance of said surface of the semiconductor substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-13 | 1997-03-15 | 1997-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-13 | 2001-03-15 | 2001-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-13 | 2005-03-15 | 2005-09-14 | $7700.00 | Window Closed / Lapsed |