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Patent US5244828A successfully refreshed from Google Patents.
US5244828A
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US
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Method of fabricating a quantum device
Assignee: Panasonic Holdings Corp
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Filing: 1992-08-25
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Granted: 1993-09-14
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Expires: 2012-08-25
Abstract
Abstract The method of fabricating a quantum device of the invention includes the steps of: forming a quantum dot having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the quantum dot; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the quantum dot; removing at least a portion of the non-crystal semiconductor layer which is positioned above the quantum dot; single-crystallizing a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer; and forming a quantum wire which includes the single-crystallized semiconductor portion and the quantum dot, on the first insulating layer.
Inventors
- 👤 Kenji Okada
- 👤 Yasuaki Terui
- 👤 Juro Yasui
- 👤 Yoshihiko Hirai
- 👤 Masaaki Niwa
- 👤 Atsuo Wada
- 👤 Kiyoshi Morimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/32; H10P14/3202; H10P14/3238; B; B82; B82Y; B82Y10/00; H10D; H10D30/00; H10D30/01; H10D30/014; H10D62/00; H10D62/80; H10D62/81; H10D62/812; H10D62/813; H10D62/814; H10D86/00; H10D86/201; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/3462; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3818; H10P14/382; Y; Y10; Y10S; Y10S438/00; Y10S438/962
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
119 words
A method of fabricating a quantum device, the method comprising the steps of: forming a quantum dot having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the quantum dot; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the quantum dot; removing at least a portion of the non-crystal semiconductor layer which is positioned above the quantum dot; single-crystallizing a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer; and forming a quantum wire which includes the single-crystallized semiconductor portion and the quantum dot, on the first insulating layer.
Claim 2
Independent Claim
119 words
A method of fabricating a quantum device, the method comprising the steps of: forming a quantum dot having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the quantum dot; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the quantum dot; removing at least a portion of the non-crystal semiconductor layer which is positioned above the quantum dot; single-crystallizing a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer; and forming a quantum wire which includes the single-crystallized semiconductor portion and the quantum dot, on the first insulating layer.
Claim 3
Dependent Claim
35 words
A method of fabricating a quantum device according to claim 1, wherein the step of removing at least the portion positioned above the quantum dot is a step of substantially planarizing the non-crystal semiconductor layer.
Claim 4
Dependent Claim
41 words
A method of fabricating a quantum device according to claim 1, wherein the single-crystallization of the predetermined portion which is in contact with the second insulating layer is performed by melting and recrystallization by using an irradiation of an energy beam.
Claim 5
Dependent Claim
41 words
A method of fabricating a quantum device according to claim 1, wherein the step of forming the second insulating layer is a step of forming an insulating layer made of an oxide film by oxidizing a surface of the quantum dot.
Claim 6
Dependent Claim
34 words
A method of fabricating a quantum device according to claim 1, further comprising a step of forming the first insulating film on a semiconductor substrate, prior to the step of forming the quantum dot.
Claim 7
Independent Claim
121 words
A method of fabricating a quantum device, the method comprising the steps of: forming a quantum dot having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the quantum dot; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the quantum dot; removing at least a portion of the non-crystal semiconductor layer which is positioned above the quantum dot; forming a quantum wire including a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer and the quantum dot, on the first insulating layer; and single-crystallizing a non-crystal portion of the quantum wire.
Claim 8
Independent Claim
121 words
A method of fabricating a quantum device, the method comprising the steps of: forming a quantum dot having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the quantum dot; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the quantum dot; removing at least a portion of the non-crystal semiconductor layer which is positioned above the quantum dot; forming a quantum wire including a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer and the quantum dot, on the first insulating layer; and single-crystallizing a non-crystal portion of the quantum wire.
Claim 9
Dependent Claim
35 words
A method of fabricating a quantum device according to claim 6, wherein the step of removing at least the portion positioned above the quantum dot is a step of substantially planarizing the non-crystal semiconductor layer.
Claim 10
Dependent Claim
36 words
A method of fabricating a quantum device according to claim 6, wherein the single-crystallization of the non-crystal portion of the quantum wire is performed by melting and recrystallization by using an irradiation of an energy beam.
Claim 11
Dependent Claim
41 words
A method of fabricating a quantum device according to claim 6, wherein the step of forming the step insulating layer is a step of forming an insulating layer made of an oxide film by oxidizing a surface of the quantum dot.
Claim 12
Dependent Claim
34 words
A method of fabricating a quantum device according to claim 6, further comprising a step of forming the first insulating film on a semiconductor substrate, prior to the step of forming the quantum dot.
Claim 13
Independent Claim
127 words
A method of fabricating a quantum device, the method comprising the steps of: forming a first quantum wire having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the first quantum wire; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the first quantum wire; removing at least a portion of the non-crystal semiconductor layer which is positioned above the first quantum wire; single-crystallizing a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer; and forming a second quantum wire which includes the single-crystallized semiconductor portion and part of the first quantum wire, on the first insulating layer.
Claim 14
Independent Claim
127 words
A method of fabricating a quantum device, the method comprising the steps of: forming a first quantum wire having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the first quantum wire; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the first quantum wire; removing at least a portion of the non-crystal semiconductor layer which is positioned above the first quantum wire; single-crystallizing a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer; and forming a second quantum wire which includes the single-crystallized semiconductor portion and part of the first quantum wire, on the first insulating layer.
Claim 15
Dependent Claim
36 words
A method of fabricating a quantum device according to claim 11, wherein the step of removing at least the portion positioned above the first quantum wire is a step of substantially planarizing the non-crystal semiconductor layer.
Claim 16
Dependent Claim
41 words
A method of fabricating a quantum device according to claim 11, wherein the single-crystallization of the predetermined portion which is in contact with the second insulating layer is performed by melting and recrystallization by using an irradiation of an energy beam.
Claim 17
Dependent Claim
42 words
A method of fabricating a quantum device according to claim 11, wherein the step of forming the second insulating layer is a step of forming an insulating layer made of an oxide film by oxidizing a surface of the first quantum wire.
Claim 18
Dependent Claim
35 words
A method of fabricating a quantum device according to claim 11, further comprising a step of forming the first insulating film on a semiconductor substrate, prior to the step of forming the first quantum wire.
Claim 19
Independent Claim
130 words
A method of fabricating a quantum device, the method comprising the steps of: forming a first quantum wire having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the first quantum wire; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the first quantum wire; removing at least a portion of the non-crystal semiconductor layer which is positioned above the first quantum wire; forming a second quantum wire including a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer and part of the first quantum wire, on the first insulating layer; and single-crystallizing a non-crystal portion of the second quantum wire.
Claim 20
Independent Claim
130 words
A method of fabricating a quantum device, the method comprising the steps of: forming a first quantum wire having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the first quantum wire; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the first quantum wire; removing at least a portion of the non-crystal semiconductor layer which is positioned above the first quantum wire; forming a second quantum wire including a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer and part of the first quantum wire, on the first insulating layer; and single-crystallizing a non-crystal portion of the second quantum wire.
Claim 21
Dependent Claim
36 words
A method of fabricating a quantum device according to claim 16, wherein the step of removing at least the portion positioned above the first quantum wire is a step of substantially planarizing the non-crystal semiconductor layer.
Claim 22
Dependent Claim
37 words
A method of fabricating a quantum device according to claim 16, wherein the single-crystallization of the non-crystal portion of the second quantum wire is performed by melting and recrystallization by using an irradiation of an energy beam.
Claim 23
Dependent Claim
42 words
A method of fabricating a quantum device according to claim 16, wherein the step of forming the second insulating layer is a step of forming an insulating layer made of an oxide film by oxidizing a surface of the first quantum wire.
Claim 24
Dependent Claim
35 words
A method of fabricating a quantum device according to claim 16, further comprising a step of forming the first insulating film on a semiconductor substrate, prior to the step of forming the first quantum wire.
References Cited (Backward Citations)
US4865923A
Cited
US5106764A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-13 | 1997-03-15 | 1997-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-13 | 2001-03-15 | 2001-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-13 | 2005-03-15 | 2005-09-14 | $7700.00 | Window Closed / Lapsed |