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US5244500A
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Process control system of semiconductor vapor phase growth apparatus
Assignee: Nuflare Technology Inc
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Filing: 1989-10-03
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Granted: 1993-09-14
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Expires: 2009-10-03
Abstract
Abstract In a semiconductor vapor phase growing apparatus of the type disclosed in U.S. Pat. No. 4,430,959 dated Feb. 14, 1984, the thickness and resistivity of the semiconductor grown on a substrate by vapor phase growing technique are controlled by a sequence program. The content of the sequence program is corrected to approach a target thickness and a target resistivity at each batch operation. In a modification, an auxiliary mass flow valve is provided for each main mass flow valve and when the main mass flow valve becomes faulty, it is substituted by the auxiliary mass flow valve so as to continue the normal operation of the vapor phase growing apparatus.
Inventors
- 👤 Hitoshi Ebata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:52
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/52; C23C16/54
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
313 words
A process control system for a semiconductor vapor growing apparatus manufacturing semiconductor devices in batches wherein operating characteristics of said semiconductor vapor growing apparatus vary from batch to batch, comprising: a reaction furnace for vapor phase growing a semiconductor on a semiconductor substrate including means for heating said semiconductor substrate; means for supplying various gases to said furnace necessary for vapor phase growth of said semiconductor; a pipe line network interconnecting said reaction furnace and said supplying means; valve means mounted in said pipe line network for controlling supply of commanded quantities of said gases to said reaction furnace; and control means for: (a) storing a process program including thickness data and resistivity data for a vapor phase grown layer formed on said substrate for a predetermined batch and optimum values of flow quantities of said different gases and a sequence time for said thickness data and said resistivity data for said predetermined batch, and storing a correlation between that thicknesses and resistivities and interbatch variations for batches subsequent to said predetermined batch; (b) determining a flow quantity and a sequence time for said predetermined batch from said stored process program; (c) determining correction values for a subsequent batch, subsequent to said predetermined batch, to correct for interbatch variations in operating characteristics of said reaction furnace by determining correction values for said sequence time and said flow quantity for said predetermined batch using said correlation and an indication of a number of batches subsequent to said predetermined batch and target thickness and target resistivity values; (d) storing a step-sequence program for said subsequent batch based on said optimum values; (e) correcting said sequence program in accordance with the determined correction values; and (f) supplying control signals based on said corrected sequence program to said valve means to control an amount of said gas, and to said reaction furnace to control a sequence time.
Claim 2
Dependent Claim
313 words
A process control system for a semiconductor vapor growing apparatus manufacturing semiconductor devices in batches wherein operating characteristics of said semiconductor vapor growing apparatus vary from batch to batch, comprising: a reaction furnace for vapor phase growing a semiconductor on a semiconductor substrate including means for heating said semiconductor substrate; means for supplying various gases to said furnace necessary for vapor phase growth of said semiconductor; a pipe line network interconnecting said reaction furnace and said supplying means; valve means mounted in said pipe line network for controlling supply of commanded quantities of said gases to said reaction furnace; and control means for: (a) storing a process program including thickness data and resistivity data for a vapor phase grown layer formed on said substrate for a predetermined batch and optimum values of flow quantities of said different gases and a sequence time for said thickness data and said resistivity data for said predetermined batch, and storing a correlation between that thicknesses and resistivities and interbatch variations for batches subsequent to said predetermined batch; (b) determining a flow quantity and a sequence time for said predetermined batch from said stored process program; (c) determining correction values for a subsequent batch, subsequent to said predetermined batch, to correct for interbatch variations in operating characteristics of said reaction furnace by determining correction values for said sequence time and said flow quantity for said predetermined batch using said correlation and an indication of a number of batches subsequent to said predetermined batch and target thickness and target resistivity values; (d) storing a step-sequence program for said subsequent batch based on said optimum values; (e) correcting said sequence program in accordance with the determined correction values; and (f) supplying control signals based on said corrected sequence program to said valve means to control an amount of said gas, and to said reaction furnace to control a sequence time.
Claim 3
Dependent Claim
127 words
The process control system according to claim 1 wherein said control means includes: first memory means storing a thickness data table in which a sequence time and gas flow quantities are set in accordance with a correlation between a thickness of said vapor phase grown layer and a quantity of source gas; second memory means storing a resistivity data table in which gas flow quantities are set in accordance with a correlation between the resistivity of said vapor phase grown layer and a dopant gas quantity; processing means for forming and adjusting said step sequence program by searching said first and second memory means for said thickness data and resistivity data of said vapor phase grown layer; and third memory means for storing said step sequence program.
Claim 4
Dependent Claim
148 words
The process control system according to claim 1 wherein said control means includes: first memory means storing a data table including an interbatch thickness correction value set with a correction value of a sequence time determined by a correlation between a preset target thickness and a thickness which varies according to a predetermined pattern based on a number of batch operations; second memory means storing a data table including an interbatch resistivity correlation value set by a correction value of a gas flow quantity set by a correlation between a preset target resistivity and a resistivity which varies according to a predetermined pattern and number of batch operations; wherein said control means searches tables of said interbatch thickness correction value and said interbatch resistivity thickness correction value each time one batch operation is completed to determine said correction values; and third memory means storing said corrected sequence program.
Claim 5
Dependent Claim
40 words
The process control means according to claim 1 wherein said control means calculates the correction values of the interbatch thickness and the interbatch resistivity based on the relationship between each batch operation and the target thickness and the target resistivity.
Claim 6
Dependent Claim
25 words
The process control system according to claim 4 wherein said relationship is a predetermined pattern for each reaction furnace and stored in a memory means.
Claim 7
Dependent Claim
66 words
The process control system according to claim 1 wherein said valve means includes main mass flow valves, auxiliary mass flow valves corresponding to respective mass flow valves, and transfer means for connecting one of said auxiliary mass flow valves in parallel with a corresponding main mass flow valve when said corresponding main mass flow valve is faulty, and for disconnecting said faulty main mass flow valve.
Claim 8
Dependent Claim
55 words
The process control system according to claim 6 wherein said control means comprises main valve monitor means and a central processing unit which together command flow quantities of said gases flowing through said main mass flow valves so as to activate said transfer means when any one of said main mass flow valves becomes faulty.
Claim 9
Dependent Claim
49 words
The process control system according to claim 7 wherein said central processing unit activates said transfer means when the flow quantity of the gases flowing through any one of said main mass flow valves varies by a predetermined amount with reference to a set value of said flow quantity.
References Cited (Backward Citations)
US4430959A
Cited
US4772485A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-13 | 1997-03-15 | 1997-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-13 | 2001-03-15 | 2001-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-13 | 2005-03-15 | 2005-09-14 | $7700.00 | Window Closed / Lapsed |