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US5236874A
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Method for forming a material layer in a semiconductor device using liquid phase deposition
Assignee: NXP USA Inc
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Filing: 1991-03-08
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Granted: 1993-08-17
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Expires: 2011-03-08
Abstract
Abstract A method is provided for forming a material layer in a semiconductor device using liquid phase deposition. A material layer such as a metal layer, a dielectric layer, a semiconductor layer or a superconducting layer is deposited by the liquid-phase thermal decomposition of a metal-organic precursor dissolved in an anhydrous organic solvent. The organic solvent has a chemical polarity corresponding to the selected metal-organic precursor and has a normal boiling point above the decomposition temperature of the selected precursor. As a result of few restrictions on the range of precursor physical properties, the present invention enables the use of a wide variety of molecular compositions which can be used for the formation of an equally wide variety of material layers. In one embodiment of the invention, a semiconductor substrate is subjected to a liquid mixture comprising a metal-substituted heterocyclic acetylacetonate precursor dissolved in tetradecane (b.p. 254°C.). Depending upon the structure of the acetylacetonate, either a metal or a metal oxide film is deposited in the liquid phase on a semiconductor substrate immersed in a solution which is maintained at the decomposition temperature of the acetylacetonate precursor.
Inventors
- 👤 Faivel S. Pintchovski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:47
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; C; C23; C23C; C23C18/00; C23C18/02; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0548; H10P14/40; H10P14/46; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
77 words
A method for the liquid phase deposition of a material layer on a semiconductor substrate comprising: preparing a solution including a metal-organic precursor dissolved in an anhydrous organic solvent; circulating the solution through a constant-temperature bath wherein the bath temperature is maintained at or above the decomposition temperature of the metal-organic precursor; immersing the semiconductor substrate in the bath; and thermally decomposing the metal-organic precursor to deposit a material layer on the surface of the semiconductor substrate.
Claim 2
Independent Claim
77 words
A method for the liquid phase deposition of a material layer on a semiconductor substrate comprising: preparing a solution including a metal-organic precursor dissolved in an anhydrous organic solvent; circulating the solution through a constant-temperature bath wherein the bath temperature is maintained at or above the decomposition temperature of the metal-organic precursor; immersing the semiconductor substrate in the bath; and thermally decomposing the metal-organic precursor to deposit a material layer on the surface of the semiconductor substrate.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein the material layer is selected from the group consisting of an electrically conductive layer, a superconductive layer and a dielectric layer.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein the metal-organic precursor is a either a solid or a liquid at room temperature and standard pressure.
Claim 5
Dependent Claim
37 words
The method of claim 1 wherein the anhydrous organic solvent is selected to have a molecular polarity corresponding to that of the metal-organic precursor and a normal boiling point above the thermal decomposition of the metal-organic precursor.
Claim 6
Independent Claim
88 words
A method for forming a material layer in a semiconductor device comprising: providing a liquid mixture containing a precursor dissolved in an anhydrous organic solvent, the precursor containing a metal selected from the group consisting of a transition metal, a group III-A metal, a group IV-A semiconductor metal, and group II-A metal; subjecting a semiconductor substrate to the liquid mixture; and thermally decomposing the precursor in the liquid phase at a temperature below the normal boiling point of the solvent to form the material layer on the substrate.
Claim 7
Independent Claim
88 words
A method for forming a material layer in a semiconductor device comprising: providing a liquid mixture containing a precursor dissolved in an anhydrous organic solvent, the precursor containing a metal selected from the group consisting of a transition metal, a group III-A metal, a group IV-A semiconductor metal, and group II-A metal; subjecting a semiconductor substrate to the liquid mixture; and thermally decomposing the precursor in the liquid phase at a temperature below the normal boiling point of the solvent to form the material layer on the substrate.
Claim 8
Dependent Claim
28 words
The method of claim 5 wherein the precursor is a coordination compound having ligands selected from the group consisting of a alkyloxide, a β-diketonate and a bi-cyclic diene.
Claim 9
Dependent Claim
20 words
The method of claim 6 wherein the organic solvent is selected from the group consisting of tetradecane, triethyleneglycol and triethylenetetramine.
Claim 10
Dependent Claim
27 words
The method of claim 5 wherein the material layer is selected from the group consisting of an electrically conductive layer, a superconductive layer and a dielectric layer.
Claim 11
Dependent Claim
28 words
The method of claim 8 wherein the electrically conductive layer is selected from the group consisting of W, Ti, Mo, Ta, Co, Pt, Cu, Au and alloys thereof.
Claim 12
Dependent Claim
22 words
The method of claim 8 wherein the electrically conductive layer is a semiconductor selected from the group consisting of Si and Ge.
Claim 13
Dependent Claim
14 words
The method of claim 8 wherein the dielectric layer is a transition metal oxide.
Claim 14
Independent Claim
115 words
A method for forming a thin film selected from the group consisting of a transition metal, a transition metal oxide, a group IV-A semiconductor metal and a transition metal oxide on a semiconductor device comprising: providing a liquid mixture containing a metal-coordinated organic precursor selected from the group consisting of a metal substituted acetylacetonate, a metal alkoxide and a group IV-A semiconductor metal substituted bi-cyclic diene dissolved in an organic solvent having a polarity corresponding to the dissolved metal-coordinated organic compound; and thermally decomposing the metal-coordinated organic compound in the liquid phase at a temperature below the boiling point of the solvent to form the thin film on an exposed surface of the semiconductor device.
Claim 15
Independent Claim
115 words
A method for forming a thin film selected from the group consisting of a transition metal, a transition metal oxide, a group IV-A semiconductor metal and a transition metal oxide on a semiconductor device comprising: providing a liquid mixture containing a metal-coordinated organic precursor selected from the group consisting of a metal substituted acetylacetonate, a metal alkoxide and a group IV-A semiconductor metal substituted bi-cyclic diene dissolved in an organic solvent having a polarity corresponding to the dissolved metal-coordinated organic compound; and thermally decomposing the metal-coordinated organic compound in the liquid phase at a temperature below the boiling point of the solvent to form the thin film on an exposed surface of the semiconductor device.
Claim 16
Dependent Claim
56 words
The method of claim 12 wherein the metal substituted acetylacetonate has the following formula: ##STR3## wherein M is selected from the group consisting of a transition metal and a group II-A metal; X is the coordination number of M; and R1 and R2 are each independently selected from the group consisting of alkyl, aryl and trihaloalkyl.
Claim 17
Dependent Claim
32 words
The method of claim 13 wherein: the transition metal is selected from the group consisting of W, Ti, Mo, Ta, Co, Pt, Cu and Au; and the group II-A metal is Ba.
Claim 18
Dependent Claim
42 words
The method of claim 12 wherein the bi-cyclic diene is a nona-2,7 diene having the following formula: ##STR4## wherein: M is a group IV-A semiconductor metal; and R1 and R2 are independently selected from the group consisting of hydrogen, alkyl or aryl.
Claim 19
Dependent Claim
13 words
The method of claim 15 wherein the group IV-A semiconductor metal is silicon.
Claim 20
Dependent Claim
34 words
The method of claim 12 wherein the metal alkoxide has the formula M(OR)x, wherein M is a transition metal having valence x and R is selected from the group consisting of tertbutyl and propyl.
Claim 21
Dependent Claim
25 words
The method of claim 17 wherein the transition metal is selected from the group consisting of W, Ti, Mo, Ta, Co, Pt, Cu and Au.
Claim 22
Dependent Claim
24 words
The method of claim 12 wherein the organic solvent is an anhydrous organic solvent selected from the group consisting of tetradecane, triethyleneglycol and triethylenetetramine.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-08-16 | 1997-02-15 | 1997-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-16 | 2001-02-15 | 2001-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-16 | 2005-02-15 | 2005-08-17 | $7700.00 | Window Closed / Lapsed |