US5236547A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a pattern in semiconductor device manufacturing process
Assignee: Toshiba Corp
•
Filing: 1991-09-25
•
Granted: 1993-08-17
•
Expires: 2011-09-25
Abstract
Abstract In a method of forming a pattern in semiconductor device manufacturing process, a thin film consisting of a silicon nitride film is formed on a substrate. Ga ions are implanted by a focussed ion beam into a selected region of the thin film. At this point, a pattern to be formed is defined by the selected region. Subsequently, the thin film is dry etched by CF 4 . At this point, the selected region into which the ions are implanted functions as an etching inhibition region.
Inventors
- 👤 Shigeki Takahashi
- 👤 Yasuhiro Shiraki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:42
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12; H01S5/1228; B; B82; B82Y; B82Y10/00; B82Y20/00; H10; H10D; H10D30/00; H10D30/01; H10D30/014; H10D30/40; H10D30/43; H10F; H10F77/00; H10F77/10; H10F77/14; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/69; H10P50/691; H10P50/693; H10P50/695; H10P50/73; H01S5/20; H01S5/2054; H01S5/2081; H01S5/209; H01S5/30; H01S5/34; H01S5/341; H10D62/00; H10D62/80; H10D62/85; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/924
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
67 words
A method of forming a pattern in semiconductor device manufacturing process comprising the steps of: implanting ions into a film to be etched to form a plurality of high-ion concentration regions having different depths from a top surface of said film; and etching said film from said surface using said high-ion concentration regions as an etching inhibition regions to form a step difference pattern on said film.
Claim 2
Independent Claim
67 words
A method of forming a pattern in semiconductor device manufacturing process comprising the steps of: implanting ions into a film to be etched to form a plurality of high-ion concentration regions having different depths from a top surface of said film; and etching said film from said surface using said high-ion concentration regions as an etching inhibition regions to form a step difference pattern on said film.
Claim 3
Dependent Claim
45 words
A method according to claim 1, wherein the step of implanting said ions into said film is performed by changing the implantation position of a focussed ion beam and by changing at least one parameter among accelerating voltage, atomic species of ion, and ionic valence.
Claim 4
Dependent Claim
18 words
A method according to claim 1, wherein the step of etching said film is performed by dry etching.
Claim 5
Dependent Claim
38 words
A method according to claim 3, wherein said film consists of a silicon nitride film or a silicon oxide film, said ions consist of Ga or In, and said etching is performed by an etching gas containing F.
Claim 6
Dependent Claim
36 words
A method according to claim 1, wherein said each step is performed in a highly pressure reduced atmosphere, and the transfer of the resulting structures between said steps is performed in a highly pressure reduced atmosphere.
Claim 7
Independent Claim
105 words
A method of forming a pattern in a semiconductor device manufacturing process, comprising the steps of: implanting atoms of Ga or In by a focused ion beam into a selected region of a thin film consisting of silicon or its compound under a highly pressure-reduced atmosphere, said selected region defining a pattern to be formed; and etching said thin film by dry etching with an etching gas containing F atoms, while allowing said F atoms to react with said implanted atoms in said selected region in order to form a fluoride thereof, and using said selected region containing said fluoride as an etching inhibition region.
Claim 8
Independent Claim
105 words
A method of forming a pattern in a semiconductor device manufacturing process, comprising the steps of: implanting atoms of Ga or In by a focused ion beam into a selected region of a thin film consisting of silicon or its compound under a highly pressure-reduced atmosphere, said selected region defining a pattern to be formed; and etching said thin film by dry etching with an etching gas containing F atoms, while allowing said F atoms to react with said implanted atoms in said selected region in order to form a fluoride thereof, and using said selected region containing said fluoride as an etching inhibition region.
Claim 9
Dependent Claim
35 words
A method according to claim 6, wherein said step of etching is performed in a highly pressure-reduced atmosphere, and the transfer of the resulting structures between said steps is performed in a highly pressure-reduced atmosphere.
Claim 10
Dependent Claim
13 words
A method according to claim 6, wherein said implanted atoms consist of Ga.
Claim 11
Dependent Claim
17 words
A method according to claim 8, wherein said thin film consists of silicon nitride or silicon oxide.
Claim 12
Dependent Claim
15 words
A method according to claim 9, wherein said etching gas consists of CF 4 .
Claim 13
Dependent Claim
101 words
A method according to claim 6 consisting essentially of the steps of: implanting atoms of Ga or In by a focused ion beam into a selected region of a thin film consisting of silicon or its compound under a highly pressure-reduced atmosphere, said selected region defining a pattern to be formed; and etching said thin film by dry etching with an etching gas containing F atoms, while allowing said F atoms to react with said implanted atoms in said selected region in order to form a fluoride thereof, and using said selected region containing said fluoride as an etching inhibition region.
Claim 14
Dependent Claim
13 words
A method according to claim 6 wherein said implanted atoms consist of In.
Claim 15
Independent Claim
155 words
A method of forming a pattern in a semiconductor device manufacturing process, comprising the steps of: forming a thin film consisting of silicon or its compound on a compound semiconductor substrate; implanting atoms of Ga or In by a focused ion beam into a selected region of a thin film, said selected region defining a pattern to be formed; etching said thin film by dry etching with an etching gas containing F atoms, while allowing said F atoms to react with said implanted atoms in said selected region in order to form a fluoride thereof, and using said selected region containing said fluoride as an etching inhibition region; and dry etching said compound semiconductor substrate using the etched pattern of said thin film as a mask; wherein each of said steps is performed in a highly pressure-reduced atmosphere and the transfer of the resulting structures between said steps is performed in a highly pressure-reduced atmosphere.
Claim 16
Independent Claim
155 words
A method of forming a pattern in a semiconductor device manufacturing process, comprising the steps of: forming a thin film consisting of silicon or its compound on a compound semiconductor substrate; implanting atoms of Ga or In by a focused ion beam into a selected region of a thin film, said selected region defining a pattern to be formed; etching said thin film by dry etching with an etching gas containing F atoms, while allowing said F atoms to react with said implanted atoms in said selected region in order to form a fluoride thereof, and using said selected region containing said fluoride as an etching inhibition region; and dry etching said compound semiconductor substrate using the etched pattern of said thin film as a mask; wherein each of said steps is performed in a highly pressure-reduced atmosphere and the transfer of the resulting structures between said steps is performed in a highly pressure-reduced atmosphere.
Claim 17
Dependent Claim
13 words
A method according to claim 13, wherein said implanted atoms consist of Ga.
Claim 18
Dependent Claim
17 words
A method according to claim 14, wherein said thin film consists of silicon nitride or silicon oxide.
Claim 19
Dependent Claim
15 words
A method according to claim 15, wherein said etching gas consists of CF 4 .
Claim 20
Dependent Claim
151 words
A method according to claim 17 consisting essentially of the steps of: forming a thin film consisting of silicon or its compound on a compound semiconductor substrate; implanting atoms of Ga or In by a focused ion beam into a selected region of a thin film, said selected region defining a pattern to be formed; etching said thin film by dry etching with an etching gas containing F atoms, while allowing said F atoms to react with said implanted atoms in said selected region in order to form a fluoride thereof, and using said selected region containing said fluoride as an etching inhibition region; and dry etching said compound semiconductor substrate using the etched pattern of said thin film as a mask; wherein each of said steps is performed in a highly pressure-reduced atmosphere and the transfer of the resulting structures between said steps is performed in a highly pressure-reduced atmosphere.
Claim 21
Dependent Claim
13 words
A method according to claim 17 wherein said implanted atoms consist of In.
Claim 22
Dependent Claim
32 words
A method according to claim 13, wherein said method further comprises a step of performing a crystal growth on said compound semiconductor substrate using said mask as a mask for selective growth.
Claim 23
Dependent Claim
25 words
A method according to claim 13, wherein said method further comprises steps of removing said mask and performing crystal growth on said compound semiconductor substrate.
References Cited (Backward Citations)
US4377734A
Cited
JPS58164226A
Cited
JPS59184528A
Cited
US4514251A
Cited
JPS6184832A
Cited
US5074955A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-16 | 1997-02-15 | 1997-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-16 | 2001-02-15 | 2001-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-16 | 2005-02-15 | 2005-08-17 | $7700.00 | Window Closed / Lapsed |