Abstract A method of manufacturing a vertical bipolar transistor including the steps of: providing a semiconductor substrate including a first region of a first conductivity type; forming an extrinsic base region of a second conductivity type in the surface of the first region, the extrinsic base region generally bounding a portion of the first region; forming by ion implantation a linking region of the second conductivity type in the surface of the bounded portion of the first region so as to electrically link generally opposing edges of the extrinsic base region through the linking region; forming an insulating spacer over the junction between the extrinsic base region and the linking region so as to generally bound a portion of the linking region within the portion of the first region; etching the surface of the bounded portion of the linking region a short distance into the linking region; forming by epitaxial growth a first layer of semiconductor material of the second conductivity type on the etched surface of the bounded portion of the linking region; heating the semiconductor substrate to form an intrinsic base region at least partially within the first layer and to form an electrical connection between the intrinsic and extrinsic base regions through the linking region; and forming a second region of the first conductivity type in the surface of the intrinsic base region.
A vertical bipolar transistor comprising: a semiconductor substrate including a first device region of a first conductivity type; a recess in a surface of said first device region; an epitaxial layer disposed in said recess; an intrinsic base region of a second conductivity type disposed at least partially within said epitaxial layer; a second device region of said first conductivity type disposed in a surface of said epitaxial layer and contained entirely within said intrinsic base region; a highly doped extrinsic base region of said second conductivity type disposed in said substrate and spaced from said intrinsic base region; and a linking region of said second conductivity type disposed intermediate said intrinsic and extrinsic base regions so as to electrically connect said intrinsic and extrinsic base regions, wherein said linking region has a relatively lighter doping concentration than said extrinsic and intrinsic base regions.
Claim 2
Dependent Claim
144 words
A vertical bipolar transistor comprising: a semiconductor substrate including a first device region of a first conductivity type; a recess in a surface of said first device region; an epitaxial layer disposed in said recess; an intrinsic base region of a second conductivity type disposed at least partially within said epitaxial layer; a second device region of said first conductivity type disposed in a surface of said epitaxial layer and contained entirely within said intrinsic base region; a highly doped extrinsic base region of said second conductivity type disposed in said substrate and spaced from said intrinsic base region; and a linking region of said second conductivity type disposed intermediate said intrinsic and extrinsic base regions so as to electrically connect said intrinsic and extrinsic base regions, wherein said linking region has a relatively lighter doping concentration than said extrinsic and intrinsic base regions.
Claim 3
Dependent Claim
27 words
The vertical bipolar transistor of claim 1 and further including a conductive extrinsic base contact disposed on a surface of said substrate over said extrinsic base region.
Claim 4
Dependent Claim
22 words
The vertical bipolar transistor of claim 2 and further including a conductive contact disposed on a surface of said second device region.
Claim 5
Dependent Claim
38 words
The vertical bipolar transistor of claim 3 and further including an insulating spacer comprising at least one layer of inorganic insulating material disposed intermediate said conductive extrinsic base contact and said conductive contact to said second device region.
Claim 6
Dependent Claim
23 words
The vertical bipolar transistor of claim 1 wherein said epitaxial layer is of a generally uniform thickness in the range of 50-100 nm.