Abstract A dry etching method for suppressing the micro-loading effects at the time of etching of the resist material layer through utilization of the competitive process of the deposition of the etching reaction product and removal by sputtering. For example, if a novolak based positive type photoresist is etched using an NH 3 gas with the wafer temperature being maintained at 70° C. or lower, reaction products at lower vapor pressure containing elements of C, O and N are produced in the etching region. In the broader etching region, the reaction products are deposited in a larger quantity than in the narrower region. The etching rate is lowered to the extent that the etchant is consumed for removing these deposited reaction products by sputtering. The result is the averaged etching rate in the wafer surface irrespective of the size of the etching region. Excess overetching becomes unnecessary as a result of suppression of the micro-loading effects.
A dry etching method comprising the steps of providing a substrate having a layer of resist material thereon, controlling the temperature of the substrate to be not higher than 70° C. and, while controlling the temperature, etching the layer of resist material with an etching gas consisting mainly of NH 3 to expose portions of the substrate and to deposit a reaction product, which is made by the etching gas and the resist material, to minimize micro-loading effect.
Claim 2
Dependent Claim
78 words
A dry etching method comprising the steps of providing a substrate having a layer of resist material thereon, controlling the temperature of the substrate to be not higher than 70° C. and, while controlling the temperature, etching the layer of resist material with an etching gas consisting mainly of NH 3 to expose portions of the substrate and to deposit a reaction product, which is made by the etching gas and the resist material, to minimize micro-loading effect.
Claim 3
Dependent Claim
29 words
A dry etching method according to claim 1, wherein the step of controlling the temperature controls the temperature to be in a range of -30° C. to 50° C.
Claim 4
Dependent Claim
24 words
A dry etching method according to claim 2, wherein said reaction product has a composition containing at least the elements C, O and N.
Claim 5
Dependent Claim
24 words
The dry etching method according to claim 1 wherein said rection product contains at least elements C, O and N in the composition thereof.