Method and apparatus for modulating light using semiconductor element having quantum well structure

Claim 2

An optical modulation apparatus comprising: a semiconductor element having quantum well structure; means for applying an electric field to the quantum well structure of said semiconductor element; means for supplying polarized probe light to said semiconductor element, the probe light whose polarization state is changed form an incident state by an electrooptical effect caused by the application of the electric field emerging from said semiconductor element; means for causing said semiconductor element to receive pump light which causes virtual charge excitation in said quantum well structure, wherein the electric field applied to said quantum well structure is screened by the virtual charge excitation and an amount of the electrooptical effect is varied by said screening so that the polarization state of the probe light emerging from said semiconductor element varies in accordance with the variation in the amount of the electrooptical effect; and a polarizer for converting the variation in the polarization state of the probe light emerging from said semiconductor element into a variation in intensity.

Claim 3

An apparatus according to claim 1, wherein said quantum well structure comprises a quantum well layer and barrier layers which sandwich said quantum well layer therebetween, said quantum well layer having a band gap inclined in a direction of a thickness thereof.

Claim 4

An apparatus according to claim 1, further comprising a phase plate located in a probe light optical path extending to said polarizer.

Claim 5

An apparatus according to claim 1, wherein the probe light has an x-axis polarized component having a magnitude equal to that of a y-axis polarized component and is incident on said semiconductor element along a z-axis when a <001> direction of a crystal constituting said semiconductor element is defined as the z-axis, a <110> direction is defined as an x-axis, and a <110> direction is defined as a y-axis.

Claim 8

A method according to claim 5, wherein the probe light has an x-axis polarized component having a magnitude equal to that of a y-axis polarized component and is incident on said semiconductor element along a z-axis when a <001> direction of a crystal constituting said semiconductor element is defined as the z-axis, a <110> direction is defined as an x-axis, and a <110> direction is defined as a y-axis.

Claim 11

An apparatus according to claim 7, wherein said quantum well structure comprises a quantum well layer and barrier layers which sandwich said quantum well layer therebetween, said quantum well layer having a band gap inclined in a direction of a thickness thereof.

Claim 12

An apparatus according to claim 7, wherein the probe light has an x-axis polarized component having a magnitude equal to that of a y-axis polarized component and is incident on said semiconductor element along a z-axis when a <001> direction of a crystal constituting said semiconductor element is defined as the z-axis, a <110> direction is defined as an x-axis, and a <110 direction is defined as a y-axis.

Claim 15

A method according to claim 10, wherein the probe light has an x-axis polarized component having a magnitude equal to that of a y-axis polarized component and is incident on said semiconductor element along a z-axis when a <001> direction of a crystal constituting said semiconductor element is defined as the z-axis, a <110> direction is defined as an x-axis, and a <110> direction is defined as a y-axis.

Claim 16

An optical modulation apparatus comprising: (a) a semiconductor element comprising: a substrate, a first semiconductor layer of a first conductivity type formed on said substrate, a multiple quantum well layer formed on said first semiconductor layer, a second semiconductor layer of a second conductivity type formed on said multiple quantum well layer, and a pair of electrodes respectively electrically connected to said fist and second semiconductor layers; (b) a voltage source, connected to said pair of electrodes, for applying a reverse-biasing electric field to said semiconductor element; (c) means for causing polarized probe light to be incident on said semiconductor element, the probe light whose polarization state is changed from the incident state by an electrooptical effect caused by the application of the electric field emerging from said semiconductor element; (d) means for causing said semiconductor element to receive pump light which causes virtual charge excitation in said multiple quantum well layer, wherein the electric field applied to said quantum well layer is screened by the virtual charge excitation and an amount of the electrooptical effect is varied by said screening so that the polarization state of the probe light emerging from said semiconductor element varies in accordance with the variation in the amount of the electrooptical effect; and (e) a polarizer for converting the variation int eh polarization state of the probe light emerging from said semiconductor element into a variation in intensity.

Claim 17

An optical modulation apparatus comprising: (a) a semiconductor element comprising: a substrate, a first semiconductor layer of a first conductivity type formed on said substrate, a multiple quantum well layer formed on said first semiconductor layer, a second semiconductor layer of a second conductivity type formed on said multiple quantum well layer, and a pair of electrodes respectively electrically connected to said fist and second semiconductor layers; (b) a voltage source, connected to said pair of electrodes, for applying a reverse-biasing electric field to said semiconductor element; (c) means for causing polarized probe light to be incident on said semiconductor element, the probe light whose polarization state is changed from the incident state by an electrooptical effect caused by the application of the electric field emerging from said semiconductor element; (d) means for causing said semiconductor element to receive pump light which causes virtual charge excitation in said multiple quantum well layer, wherein the electric field applied to said quantum well layer is screened by the virtual charge excitation and an amount of the electrooptical effect is varied by said screening so that the polarization state of the probe light emerging from said semiconductor element varies in accordance with the variation in the amount of the electrooptical effect; and (e) a polarizer for converting the variation int eh polarization state of the probe light emerging from said semiconductor element into a variation in intensity.

Claim 18

An apparatus according to claim 12, wherein said quantum well structure comprises a quantum well layer and barrier layers which sandwich said quantum well layer therebetween, said quantum well layer having a band gap inclined in a direction of a thickness thereof.

Claim 19

An apparatus according to claim 12, wherein said multiple quantum well layer comprises a plurality of AlGaAs quantum well layers and a plurality of AlAs barrier layers, which are alternately stacked on each other.

Claim 20

An apparatus according to claim 12, wherein said substrate and said electrodes have openings through which the probe light is transmitted.

Claim 21

An apparatus according to claim 12, further comprising a phase plate located in a probe light optical path extending to said polarizer.

Claim 22

An apparatus according to claim 12, wherein the probe light has an x-axis polarized component having a magnitude equal to that of a y-axis polarized component and is incident on said semiconductor element along a z-axis when a <001> direction of a crystal constituting said semiconductor element is defined as the z-axis, a <110> direction is defined as an x-axis, and a <110> direction is defined as a y-axis.

Claim 25

An apparatus according to claim 18, wherein said quantum well structure comprises a quantum well layer and barrier layers which sandwich said quantum well layer therebetween, said quantum well layer having a band gap inclined in a direction of a thickness thereof.

Claim 26

An apparatus according to claim 18, wherein said multiple quantum well layer comprises a plurality of AlGaAs quantum well layers and a plurality of AlAs barrier layers, which are alternately stacked on each other.

Claim 27

An apparatus according to claim 18, wherein said substrate and said electrodes have openings through which the probe light is transmitted.

Claim 28

An apparatus according to claim 18, wherein the probe light has an x-axis polarized component having a magnitude equal to that of a y-axis polarized component and is incident on said semiconductor element along a z-axis when a <001> direction of a crystal constituting said semiconductor element is defined as the z-axis, a <110> direction is defined as an x-axis, and a <110> direction is defined as a y-axis.

Claim 29

An optical modulation apparatus comprising: a semiconductor element having quantum well structure; means for applying an electric field to said quantum well structure of said semiconductor element; means for causing a polarized probe light to be incident on said semiconductor element, the probe light whose polarization state is changed form the incident state by the electrooptical effect caused by the application of the electric field emerging form said semiconductor element; means for causing said semiconductor element to receive pump light which causes a virtual charge excitation in said quantum well structure, wherein the electric field applied to said quantum well structure is screened by the virtual charge excitation and an amount of the electrooptical effect is varied by said screening so that the polarization state of the probe light emerged form said semiconductor element varies in accordance with the variation in the amount of the electrooptical effect; a polarizer for converting the variation in the polarization state of the probe light emerged from said semiconductor element into a variation in intensity; and a phase plate disposed in a probe light path extending to said polarizer, wherein when a <001> direction of a crystal constituting said semiconductor element is defined as a z-direction, a <110> direction thereof is defined as an x-direction, and a <110> direction thereof is defined as a y-axis direction, the probe light has a polarized state in which the magnitude of the polarized component in the x-axis direction is equal to that in the y-axis direction and the probe light is incident on said semiconductor element along the z-axis direction, and wherein the following condition is satisfied, θ=π/4 Φ=ρ-ε±π/2 where θis an angle of a transmission axis of said polarizer with respect to the x-axis, ⊖ is a relative phase difference between the x-axis and the y-axis of said semiconductor element when the probe light is not incident thereon, ρ is a phase difference between the polarized component of the probe light in the x-axis direction and that in the y-axis direction, and Φ is a phase difference of said phase plate.

Claim 30

An optical modulation apparatus comprising: a semiconductor element having quantum well structure; means for applying an electric field to said quantum well structure of said semiconductor element; means for causing a polarized probe light to be incident on said semiconductor element, the probe light whose polarization state is changed form the incident state by the electrooptical effect caused by the application of the electric field emerging form said semiconductor element; means for causing said semiconductor element to receive pump light which causes a virtual charge excitation in said quantum well structure, wherein the electric field applied to said quantum well structure is screened by the virtual charge excitation and an amount of the electrooptical effect is varied by said screening so that the polarization state of the probe light emerged form said semiconductor element varies in accordance with the variation in the amount of the electrooptical effect; a polarizer for converting the variation in the polarization state of the probe light emerged from said semiconductor element into a variation in intensity; and a phase plate disposed in a probe light path extending to said polarizer, wherein when a <001> direction of a crystal constituting said semiconductor element is defined as a z-direction, a <110> direction thereof is defined as an x-direction, and a <110> direction thereof is defined as a y-axis direction, the probe light has a polarized state in which the magnitude of the polarized component in the x-axis direction is equal to that in the y-axis direction and the probe light is incident on said semiconductor element along the z-axis direction, and wherein the following condition is satisfied, θ=π/4 Φ=ρ-ε±π/2 where θis an angle of a transmission axis of said polarizer with respect to the x-axis, ⊖ is a relative phase difference between the x-axis and the y-axis of said semiconductor element when the probe light is not incident thereon, ρ is a phase difference between the polarized component of the probe light in the x-axis direction and that in the y-axis direction, and Φ is a phase difference of said phase plate.

Claim 31

An apparatus according to claim 23, wherein said quantum well structure comprises a quantum well layer and barrier layers which sandwich said quantum well layer therebetween, and said quantum well layer has a band gap inclined in a direction of thickness thereof.

Claim 34

An optical modulation apparatus comprising: (a) a semiconductor element comprising: a substrate, a first semiconductor layer of a first conductivity type formed on said substrate, a multiple quantum well layer formed on said first semiconductor layer, a second semiconductor layer of a second conductivity type formed on said multiple quantum well layer, and a pair of electrodes respectively electrically connected to said fist and second semiconductor layers; (b) a voltage source, connected to said pair of electrodes, for applying a reverse-biasing electric field to said semiconductor element; (c) means for causing polarized probe light to be incident on said semiconductor element, the probe light whose polarization state is changed from the incident state by the electrooptical effect caused by the application of the electric field emerging from said semiconductor element; (d) means for causing said semiconductor element to receive pump light which causes virtual charge excitation in said multiple quantum well layer, wherein the electric field applied to said quantum well layer is screened by the virtual charge excitation and an amount of the electrooptical effect is varied by said screening so that the polarization state of the probe light emerged form said semiconductor element varies in accordance with the variation in the amount of the electrooptical effect; (e) a polarizer for converting the variation in the polarization sate of the probe light emerged from said semiconductor element into a variation in intensity; and (f) a phase plate disposed in a probe light path extending to said polarizer, wherein when a <001> direction of a crystal constituting said semiconductor element is defined as a z-axis direction, a <110> direction thereof is defined as a x-axis direction, and a <110> direction thereof is defined as a y-axis direction, the probe light has a polarization state in which the magnitude of the polarized component in the x-axis direction is equal to that in the y-axis direction and the probe light is incident on said semiconductor element along the z-axis direction, and wherein the following condition is satisfied, θ=π/4 Φ=-ρε±π/2, where θ is an angle of a transmission axis of said polarizer with respect to the x-axis, ε is a relative phase difference between the x-axis and the y-axis of said semiconductor element when the probe light is not incident thereon, ρ is a phase difference between eh polarized component of the probe light in the x-axis direction and that in the y-axis direction, and Φ is a phase difference of said phase plate.

Claim 35

An optical modulation apparatus comprising: (a) a semiconductor element comprising: a substrate, a first semiconductor layer of a first conductivity type formed on said substrate, a multiple quantum well layer formed on said first semiconductor layer, a second semiconductor layer of a second conductivity type formed on said multiple quantum well layer, and a pair of electrodes respectively electrically connected to said fist and second semiconductor layers; (b) a voltage source, connected to said pair of electrodes, for applying a reverse-biasing electric field to said semiconductor element; (c) means for causing polarized probe light to be incident on said semiconductor element, the probe light whose polarization state is changed from the incident state by the electrooptical effect caused by the application of the electric field emerging from said semiconductor element; (d) means for causing said semiconductor element to receive pump light which causes virtual charge excitation in said multiple quantum well layer, wherein the electric field applied to said quantum well layer is screened by the virtual charge excitation and an amount of the electrooptical effect is varied by said screening so that the polarization state of the probe light emerged form said semiconductor element varies in accordance with the variation in the amount of the electrooptical effect; (e) a polarizer for converting the variation in the polarization sate of the probe light emerged from said semiconductor element into a variation in intensity; and (f) a phase plate disposed in a probe light path extending to said polarizer, wherein when a <001> direction of a crystal constituting said semiconductor element is defined as a z-axis direction, a <110> direction thereof is defined as a x-axis direction, and a <110> direction thereof is defined as a y-axis direction, the probe light has a polarization state in which the magnitude of the polarized component in the x-axis direction is equal to that in the y-axis direction and the probe light is incident on said semiconductor element along the z-axis direction, and wherein the following condition is satisfied, θ=π/4 Φ=-ρε±π/2, where θ is an angle of a transmission axis of said polarizer with respect to the x-axis, ε is a relative phase difference between the x-axis and the y-axis of said semiconductor element when the probe light is not incident thereon, ρ is a phase difference between eh polarized component of the probe light in the x-axis direction and that in the y-axis direction, and Φ is a phase difference of said phase plate.

Claim 36

An apparatus according to claim 26, wherein said quantum well structure comprises a quantum well layer and barrier layers which sandwich said quantum well layer therebetween, and said quantum well layer has a band gap inclined in a direction of thickness thereof.

Claim 37

An apparatus according to claim 26, wherein said multiple quantum well layer comprises a plurality of quantum well layers composed of AlGaAs and a plurality of barrier layers composed of AlAs, which are alternately stacked on each other.

Claim 38

An apparatus according to claim 26, wherein said substrate and said electrodes have openings through which the probe light is transmitted.