High frequency semiconductor systems using electric fields perpendicular to the direction of wave propagation

Claim 1

IN COMBINATION: A MEMBER CONSTRUCTED OF ONE TYPE OF A PARTICULAR SEMICONDUCTOR MATERIAL INCLUDING AN EXCESS OF FREE CHARGE CARRIERS, WHEREIN SAID PARTICULAR SEMICONDUCTOR MATERIAL IS CHARACTERIZED BY BEING SUBSTANTIALLY TRANSPARENT TO ELECTROMAGNETIC ENERGY OF A GIVEN FREQUENCY PASSING THERETHROUGH, AND WHICH IN THE PRESENCE OF SAID ELECTROMAGNETIC ENERGY PASSING THERETHROUGH IN A FIRST DIRECTION WITH A MAGNETIC COMPONENT VECTOR OF SAID ELECTROMAGNETIC ENERGY POLARIZED IN SECOND DIRECTION PERPENDICULAR TO SAID FIRST DIRECTION AND IN THE PRESENCE OF AN ELECTRIC FIELD THROUGH SAID SEMICONDUCTOR MATERIAL IN A THIRD DIRECTION PERPENDICULAR TO BOTH SAID FIRST AND SECOND DIRECTIONS IS FURTHER CHARACTERIZED BY GENERATING ADDITIONAL PHONTONS OF ELECTROMAGNETIC ENERGY OF SAID GIVEN FREQUENCY IN AN AMOUNT WHICH IS PROPORTIONAL TO THE PRODUCT OF SAID MAGNETIC COMPONENT VECTOR AND THE STRENGTH OF SAID ELECTIRC FIELD, MEANS INCLUDING OHMIC STRENGTH OF SAID SEMICONDUCTOR MATERIAL FOR APPLYING SAID ELECTRIC FIELD IN SAID THIRD DIRECTION, AND MEANS FOR APPLYING SAID ELECTRICMAGNETIC ENERGY TO AND THROUGH SAID SEMICONDUCTOR MATERIAL IN SAID FIRST DIRECTION WITH A MAGNETIC COMPONENT VECTOR IN SAID SECOND DIRECTION, WHEREBY SAID ADDITIONAL PHOTONS ARE GENERATED WITHIN SAID SEMICONDUCTOR MATERIAL.