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US5229332A
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Method for the growth of epitaxial metal-insulator-metal-semiconductor structures
Assignee: Texas Instruments Inc
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Filing: 1992-02-25
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Granted: 1993-07-20
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Expires: 2012-02-25
Abstract
Abstract In one form of the invention, a method for the growth of an epitaxial insulatormetal structure on a semiconductor surface comprising the steps of maintaining the semiconductor surface at a pressure below approximately 1×10 -7 mbar, maintaining the semiconductor surface at a substantially fixed first temperature between approximately 25° C. and 400° C., depositing an epitaxial metal layer on the semiconductor surface, adjusting the semiconductor surface to a substantially fixed second temperature between approximately 25° C. and 200° C., starting a deposition of epitaxial CaF 2 on the first metal layer, ramping the second temperature to a third substantially fixed temperature between 200° C. and 500° C. over a time period, maintaining the third temperature until the epitaxial CaF 2 has deposited to a desired thickness, and stopping the deposition of epitaxial CaF 2 on the first metal layer.
Inventors
- 👤 Chih-Chen Cho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:14
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10P14/40; H10P14/412; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10P14/65; H10P14/6502; H10P14/6504
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
144 words
A method for the growth of an epitaxial insulator-metal structure on a semiconductor surface comprising the steps of: maintaining said semiconductor surface at a pressure below approximately 1×10 -7 mbar; maintaining said semiconductor surface at an approximately fixed first temperature between approximately 25° C. and 400° C.; depositing an epitaxial first metal layer on said semiconductor surface; adjusting said semiconductor surface to an approximately fixed second temperature between approximately 25° C. and 200° C.; starting a deposition of epitaxial CaF 2 on said epitaxial first metal layer; ramping said second temperature to a third approximately fixed temperature between approximately 200° C. and 500° C. over a time period; maintaining said third temperature until said epitaxial CaF 2 has deposited to a desired thickness; and stopping said deposition of epitaxial CaF 2 on said epitaxial first metal layer, whereby an epitaxial insulator-metal-semiconductor structure is formed.
Claim 2
Independent Claim
144 words
A method for the growth of an epitaxial insulator-metal structure on a semiconductor surface comprising the steps of: maintaining said semiconductor surface at a pressure below approximately 1×10 -7 mbar; maintaining said semiconductor surface at an approximately fixed first temperature between approximately 25° C. and 400° C.; depositing an epitaxial first metal layer on said semiconductor surface; adjusting said semiconductor surface to an approximately fixed second temperature between approximately 25° C. and 200° C.; starting a deposition of epitaxial CaF 2 on said epitaxial first metal layer; ramping said second temperature to a third approximately fixed temperature between approximately 200° C. and 500° C. over a time period; maintaining said third temperature until said epitaxial CaF 2 has deposited to a desired thickness; and stopping said deposition of epitaxial CaF 2 on said epitaxial first metal layer, whereby an epitaxial insulator-metal-semiconductor structure is formed.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said pressure is below 2×10 -9 mbar.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein said first temperature is 300° C.
Claim 5
Dependent Claim
13 words
The method of claim 1 wherein said epitaxial first metal layer is Al.
Claim 6
Dependent Claim
14 words
The method of claim 1 wherein said approximately fixed second temperature is 100° C.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein said third approximately fixed temperature is 300° C.
Claim 8
Dependent Claim
12 words
The method of claim 1 wherein said time period is five minutes.
Claim 9
Dependent Claim
19 words
The method of claim 1 wherein said deposition of epitaxial CaF 2 occurs at the rate of 4 nm/min.
Claim 10
Dependent Claim
37 words
The method of claim 1 wherein said semiconductor substrate is adjusted to an approximately fixed temperature between approximately 25° C. and 400° C. and an epitaxial second metal layer is deposited on said epitaxial CaF 2 layer.
Claim 11
Dependent Claim
13 words
The method of claim 9 wherein said approximately fixed temperature is 300° C.
Claim 12
Dependent Claim
13 words
The method of claim 9 wherein said epitaxial second metal layer is Al.
Claim 13
Independent Claim
91 words
A method for the growth of epitaxial CaF 2 and metal on a semiconductor surface comprising the steps of: performing all process steps at a pressure below approximately 1×10 -7 mbar; maintaining said semiconductor surface at a first temperature between approximately 25° C. and 800° C.; depositing epitaxial CaF 2 on said semiconductor surface using neutral beam epitaxy; adjusting said semiconductor surface to an approximately fixed second temperature between approximately 25° C. and 400° C.; and depositing epitaxial metal on said CaF 2 , whereby an epitaxial metal-insulator-semiconductor structure is formed.
Claim 14
Independent Claim
91 words
A method for the growth of epitaxial CaF 2 and metal on a semiconductor surface comprising the steps of: performing all process steps at a pressure below approximately 1×10 -7 mbar; maintaining said semiconductor surface at a first temperature between approximately 25° C. and 800° C.; depositing epitaxial CaF 2 on said semiconductor surface using neutral beam epitaxy; adjusting said semiconductor surface to an approximately fixed second temperature between approximately 25° C. and 400° C.; and depositing epitaxial metal on said CaF 2 , whereby an epitaxial metal-insulator-semiconductor structure is formed.
Claim 15
Dependent Claim
13 words
The method of claim 12 wherein said pressure is below 2×10 -9 mbar.
Claim 16
Dependent Claim
10 words
The method of claim 12 wherein said metal is Al.
Claim 17
Dependent Claim
12 words
The method of claim 12 wherein said first temperature is 700° C.
Claim 18
Dependent Claim
26 words
The method of claim 12 wherein said first temperature is ramped from 100° C. to 600° C. over a time period and then remains approximately fixed.
Claim 19
Dependent Claim
12 words
The method of claim 16 wherein said time period is five minutes.
Claim 20
Dependent Claim
14 words
The method of claim 12 wherein said neutral beam epitaxy is molecular beam epitaxy.
Claim 21
Dependent Claim
14 words
The method of claim 12 wherein said approximately fixed second temperature is 300° C.
Claim 22
Dependent Claim
10 words
The method of claim 12 wherein said semiconductor is Si.
References Cited (Backward Citations)
No citation records indexed.
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