US5227838A
Expired / Lapsed
US
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Exposure system
Assignee: Panasonic Holdings Corp
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Filing: 1991-01-16
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Granted: 1993-07-13
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Expires: 2011-01-16
Abstract
Abstract An exposure system includes a pulse light source emitting light in response to a trigger signal and giving a predetermined exposure light quantity by a plurality of times of light emission. A reticle has an alignment mark and a light exposure pattern. A projection lens contractedly projects the pattern of the reticle. A wafer has an alignment mark to be located. The wafer is exposed to a projection of the pattern. A wafer stage is movable and carries the wafer. A laser interferometer measures a position of the wafer stage. An alignment device serves to detect a condition of an alignment of the wafer with respect to the reticle in an exposure position.
Inventors
- 👤 Yoshito Nakanishi
- 👤 Takeo Sato
- 👤 Nobuaki Furuya
- 👤 Takeo Miyata
- 👤 Shinichi Mizuguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:47
CPC Classifications
G; G03; G03F; G03F9/00; G03F9/70; G03F9/7049; G03F7/00; G03F7/70; G03F7/708
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
112 words
An exposure system comprising: a reticle having a mask pattern; a wafer; photolithographic means for optically transferring an image of the mask pattern of the reticle onto the wafer; detecting means for detecting an error in a position of the wafer with respect to a predetermined desired position of the wafer; moving means for imparting a periodic movement of given amplitude and frequency to the wafer to periodically nullify the error in the position of the wafer with respect to the predetermined desired position; and control means connected to the photolithographic means and the detecting means for, each time the error detected by the detecting means is nullified, activating the photolithographic means.
Claim 2
Dependent Claim
112 words
An exposure system comprising: a reticle having a mask pattern; a wafer; photolithographic means for optically transferring an image of the mask pattern of the reticle onto the wafer; detecting means for detecting an error in a position of the wafer with respect to a predetermined desired position of the wafer; moving means for imparting a periodic movement of given amplitude and frequency to the wafer to periodically nullify the error in the position of the wafer with respect to the predetermined desired position; and control means connected to the photolithographic means and the detecting means for, each time the error detected by the detecting means is nullified, activating the photolithographic means.
Claim 3
Dependent Claim
103 words
An exposure system comprising: a reticle having a mask pattern; a wafer; photolithographic means for optically transferring an image of the mask pattern of the reticle onto the wafer; detecting means for detecting an error in alignment between the reticle and the wafer; moving means imparting a periodic movement of given amplitude and frequency to the wafer relative to the reticle to periodically nullify the error in the alignment between the reticle and the wafer; and control means connected to the photolithographic means and the detecting means for, each time the error detected by the detecting means is nullified, activating the photolithographic means.
Claim 4
Dependent Claim
103 words
An exposure system comprising: a reticle having a mask pattern; a wafer; photolithographic means for optically transferring an image of the mask pattern of the reticle onto the wafer; detecting means for detecting an error in alignment between the reticle and the wafer; moving means imparting a periodic movement of given amplitude and frequency to the wafer relative to the reticle to periodically nullify the error in the alignment between the reticle and the wafer; and control means connected to the photolithographic means and the detecting means for, each time the error detected by the detecting means is nullified, activating the photolithographic means.
Claim 5
Dependent Claim
124 words
An exposure system comprising: a reticle having a mask pattern and an alignment mark; a wafer having an alignment mark; photolithographic means for optically transferring an image of the mask pattern of the reticle onto the wafer; detecting means for detecting an error in alignment between the reticle and the wafer by use of the alignment marks of the reticle and the wafer; moving means for imparting a periodic movement of given amplitude and frequency to the wafer relative to the reticle to periodically nullify the error in the alignment between the reticle and the wafer; and control means connected to the photolithographic means and the detecting means for, each time the error detected by the detecting means is nullified, activating the photolithographic means.
Claim 6
Dependent Claim
124 words
An exposure system comprising: a reticle having a mask pattern and an alignment mark; a wafer having an alignment mark; photolithographic means for optically transferring an image of the mask pattern of the reticle onto the wafer; detecting means for detecting an error in alignment between the reticle and the wafer by use of the alignment marks of the reticle and the wafer; moving means for imparting a periodic movement of given amplitude and frequency to the wafer relative to the reticle to periodically nullify the error in the alignment between the reticle and the wafer; and control means connected to the photolithographic means and the detecting means for, each time the error detected by the detecting means is nullified, activating the photolithographic means.
Claim 7
Dependent Claim
161 words
An exposure system comprising: a light source emitting light; a reticle located at a give position exposed to the light emitted from the light source, the reticle having a given mask pattern; a projection optical system located at a given position exposed to light outputted from the reticle, the projection optical system having a given exposure magnification; a wafer exposed to light outputted from the projection optical system, whereby the mask pattern of the reticle is projected onto the wafer; moving means for imparting a periodic movement of given amplitude and frequency to, at least the wafer in a manner such that the wafer passes through a given reference position or a region near the given reference position; and controlling means for controlling the light in a manner such that the mask pattern of the reticle is projected onto the wafer by the light when the wafer passes through the given reference position or the region near the given reference position.
Claim 8
Dependent Claim
161 words
An exposure system comprising: a light source emitting light; a reticle located at a give position exposed to the light emitted from the light source, the reticle having a given mask pattern; a projection optical system located at a given position exposed to light outputted from the reticle, the projection optical system having a given exposure magnification; a wafer exposed to light outputted from the projection optical system, whereby the mask pattern of the reticle is projected onto the wafer; moving means for imparting a periodic movement of given amplitude and frequency to, at least the wafer in a manner such that the wafer passes through a given reference position or a region near the given reference position; and controlling means for controlling the light in a manner such that the mask pattern of the reticle is projected onto the wafer by the light when the wafer passes through the given reference position or the region near the given reference position.
Claim 9
Dependent Claim
94 words
The exposure system of claim 4, further comprising detecting means for detecting an error of a position of the wafer with respect to the given reference position, and wherein the controlling means comprises means for, when the position error detected by the detecting means is substantially zero, recognizing that the wafer passes through the given reference position or the region near the given reference position and controlling the light source and thereby controlling the light in a manner such that the mask pattern of the reticle is projected onto the wafer by the light.
Claim 10
Dependent Claim
25 words
The exposure system of claim 4, wherein the moving means comprises moving means for imparting said periodic movement in a plane parallel to the wafer.
Claim 11
Dependent Claim
37 words
The exposure system of claim 4, wherein the light projects the mask pattern of the reticle onto the wafer in a time short with respect to a speed of movement of the wafer by the moving means.
Claim 12
Dependent Claim
31 words
The exposure system of claim 4, wherein the given reference position agrees with a position at which the wafer and the reticle are in positional alignment via the projection optical system.
Claim 13
Dependent Claim
180 words
An exposure system comprising: a light source emitting light; a reticle located at a given position exposed to the light emitted from the light source, the reticle having a given mask pattern; a projection optical system located at a given position exposed to light outputted from the reticle, the projection optical system having a given exposure magnification; a wafer exposed to light outputted from the projection optical system, whereby the mask pattern of the reticle is projected onto the wafer; moving means for imparting a periodic movement of given amplitude and frequency to at least the wafer in a manner such that the wafer passes through a given reference position or a region near the given reference position, the given reference position agreeing with a position at which the wafer and the reticle are in positional alignment; and controlling means for controlling the light in a manner such that the mask pattern of the reticle is projected onto the wafer by the light when the wafer passes through the given reference position or the region near the given reference position.
Claim 14
Dependent Claim
180 words
An exposure system comprising: a light source emitting light; a reticle located at a given position exposed to the light emitted from the light source, the reticle having a given mask pattern; a projection optical system located at a given position exposed to light outputted from the reticle, the projection optical system having a given exposure magnification; a wafer exposed to light outputted from the projection optical system, whereby the mask pattern of the reticle is projected onto the wafer; moving means for imparting a periodic movement of given amplitude and frequency to at least the wafer in a manner such that the wafer passes through a given reference position or a region near the given reference position, the given reference position agreeing with a position at which the wafer and the reticle are in positional alignment; and controlling means for controlling the light in a manner such that the mask pattern of the reticle is projected onto the wafer by the light when the wafer passes through the given reference position or the region near the given reference position.
Claim 15
Dependent Claim
94 words
The exposure system of claim 9, further comprising detecting means for detecting an error of a position of the wafer with respect to the given reference position, and wherein the controlling means comprises means for, when the position error detected by the detecting means is substantially zero, recognizing that the wafer passes through the given reference position or the region near the given reference position and controlling the light source and thereby controlling the light in a manner such that the mask pattern of the reticle is projected onto the wafer by the light.
Claim 16
Dependent Claim
25 words
The exposure system of claim 9, wherein the moving means comprises moving means for imparting said periodic movement in a plane parallel to the wafer.
Claim 17
Dependent Claim
37 words
The exposure system of claim 9, wherein the light projects the mask pattern of the reticle onto the wafer in a time short with respect to a speed of movement of the wafer by the moving means.
Claim 18
Dependent Claim
198 words
An exposure system comprising: a light source emitting light; a reticle located at a given position exposed to the light emitted from the light source, the reticle having a given mask pattern; a projection optical system located at a given position exposed to light outputted from the reticle, the projection optical system having a given exposure magnification; a wafer exposed to light outputted from the projection optical system, whereby the mask pattern of the reticle is projected onto the wafer; moving means for imparting a periodic movement of given amplitude and frequency to at least the wafer in a manner such that the wafer passes through a given reference position or a region near the given reference position; and controlling means for controlling the light source and thereby controlling the light in a manner such that the mask pattern of the reticle is projected onto the wafer by the light at a given time prior to a moment at which the wafer passes through the given reference position or the region near the given reference position; wherein the given time is substantially equal to a time spent in the control of the light source by the controlling means.
Claim 19
Dependent Claim
198 words
An exposure system comprising: a light source emitting light; a reticle located at a given position exposed to the light emitted from the light source, the reticle having a given mask pattern; a projection optical system located at a given position exposed to light outputted from the reticle, the projection optical system having a given exposure magnification; a wafer exposed to light outputted from the projection optical system, whereby the mask pattern of the reticle is projected onto the wafer; moving means for imparting a periodic movement of given amplitude and frequency to at least the wafer in a manner such that the wafer passes through a given reference position or a region near the given reference position; and controlling means for controlling the light source and thereby controlling the light in a manner such that the mask pattern of the reticle is projected onto the wafer by the light at a given time prior to a moment at which the wafer passes through the given reference position or the region near the given reference position; wherein the given time is substantially equal to a time spent in the control of the light source by the controlling means.
Claim 20
Dependent Claim
208 words
An exposure system comprising: a light source emitting light; a reticle located at a given position exposed to the light emitted from the light source, the reticle having a given mask pattern; a projection optical system located at a given position exposed to light outputted from the reticle, the projection optical system having a given exposure magnification; a wafer exposed to light outputted from the projection optical system, whereby the mask pattern of the reticle is projected onto the wafer; moving meaNs for imparting a periodic movement of given amplitude and frequency to at least the wafer in a manner such that the wafer passes through a given reference position or a region near the given reference position, the given reference position agreeing with a position at which the wafer and the reticle are in positional alignment; and controlling means for controlling the light source and thereby controlling the light in a manner such that the mask pattern of the reticle is projected onto the wafer by the light when the wafer passes through the given reference position or the region near the given reference position; wherein the given time is substantially equal to a time spent in the control of the light source by the controlling means.
Claim 21
Dependent Claim
208 words
An exposure system comprising: a light source emitting light; a reticle located at a given position exposed to the light emitted from the light source, the reticle having a given mask pattern; a projection optical system located at a given position exposed to light outputted from the reticle, the projection optical system having a given exposure magnification; a wafer exposed to light outputted from the projection optical system, whereby the mask pattern of the reticle is projected onto the wafer; moving meaNs for imparting a periodic movement of given amplitude and frequency to at least the wafer in a manner such that the wafer passes through a given reference position or a region near the given reference position, the given reference position agreeing with a position at which the wafer and the reticle are in positional alignment; and controlling means for controlling the light source and thereby controlling the light in a manner such that the mask pattern of the reticle is projected onto the wafer by the light when the wafer passes through the given reference position or the region near the given reference position; wherein the given time is substantially equal to a time spent in the control of the light source by the controlling means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-12 | 1997-01-11 | 1997-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-12 | 2001-01-11 | 2001-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-12 | 2005-01-11 | 2005-07-13 | $7700.00 | Window Closed / Lapsed |