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Patent US5227341A successfully refreshed from Google Patents.
US5227341A
Expired / Lapsed
US
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Method of manufacturing a semiconductor device using an isopropyl alcohol ashing step
Assignee: Sony Corp
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Filing: 1992-02-06
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Granted: 1993-07-13
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Expires: 2012-02-06
Abstract
Abstract An improved method of manufacturing a semiconductor device includes forming an insulating layer on a substrate, depositing a metal film layer on the insulating layer and depositing a photoresist layer on the metal film layer. The photoresist layer is formed with openings through which a predetermined surface of the metal film layer is exposed. The predetermined surface of the metal film layer is subjected to dry etching so that an underlying portion of the insulating layer is exposed. The remaining portion of the photoresist layer is then subjected to ashing by using an isopropyl alcohol-containing gas to expose the surface of said metal film layer.
Inventors
- 👤 Yukihiro Kamide
- 👤 Shingo Kadomura
- 👤 Tetsuya Tatsumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 10:41
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P70/00; H10P70/20; H10P70/27; H10P70/273; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; H10P50/28; H10P50/286; H10P50/287
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
93 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a substrate; depositing a metal film on said insulating layer; depositing a photoresist layer on said metal film layer; forming an opening in said photoresist layer to expose a surface of said metal film layer therethrough; dry-etching said surface of said metal film layer to expose an underlying portion of said insulating layer; and ashing the remaining portion of said photoresist layer by using an isopropyl alcohol-containing gas to expose the surface of said metal film layer.
Claim 2
Independent Claim
93 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a substrate; depositing a metal film on said insulating layer; depositing a photoresist layer on said metal film layer; forming an opening in said photoresist layer to expose a surface of said metal film layer therethrough; dry-etching said surface of said metal film layer to expose an underlying portion of said insulating layer; and ashing the remaining portion of said photoresist layer by using an isopropyl alcohol-containing gas to expose the surface of said metal film layer.
Claim 3
Dependent Claim
15 words
A method as claimed in claim 1, wherein said substrate is made of monocrystalline silicon.
Claim 4
Dependent Claim
16 words
A method as claimed in claim 1, wherein said insulating layer is made of silicon dioxide.
Claim 5
Dependent Claim
27 words
A method as claimed in claim 1, wherein said metal film layer is made of one selected from a group consisting of aluminum and an aluminum-containing alloy.
Claim 6
Dependent Claim
19 words
A method as claimed in claim 4, wherein said aluminum alloy is selected from aluminum/silicon alloy and/or aluminum/copper alloy.
Claim 7
Dependent Claim
15 words
A method as claimed in claim 1, wherein said isopropyl alcohol-containing gas further comprises oxygen.
Claim 8
Dependent Claim
15 words
A method as claimed in claim 6, wherein said isopropyl alcohol-containing gas further comprises fluorine.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-12 | 1997-01-11 | 1997-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-12 | 2001-01-11 | 2001-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-12 | 2005-01-11 | 2005-07-13 | $7700.00 | Window Closed / Lapsed |