US5227332A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Methods of plating into holes and products produced thereby
Assignee: LSI Corp
•
Filing: 1990-11-30
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Granted: 1993-07-13
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Expires: 2010-11-30
Abstract
Abstract In the plating of articles, particularly the filling of via-holes (16) in the manufacture of semiconductor devices, a catalyst, for example palladium, is incorporated throughout the body of material (12) to which plating is to be effected, as compared with activating just the surface of the body.
Inventors
- 👤 Neil Morris
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:11
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
71 words
A method of filling a hole of a semiconductor device comprising: depositing on a substrate a first layer of material which first layer incorporates throughout a catalyst suited to facilitate the plating of a plating metal subsequently to be plated to the surface of the first layer; forming an insulation layer over the first layer; forming a hole through said insulation layer; and depositing the plating metal to fill the hole.
Claim 2
Independent Claim
71 words
A method of filling a hole of a semiconductor device comprising: depositing on a substrate a first layer of material which first layer incorporates throughout a catalyst suited to facilitate the plating of a plating metal subsequently to be plated to the surface of the first layer; forming an insulation layer over the first layer; forming a hole through said insulation layer; and depositing the plating metal to fill the hole.
Claim 3
Dependent Claim
12 words
A method as claimed in claim 1, wherein: the catalyst is palladium.
Claim 4
Dependent Claim
21 words
A method according to claim 1, wherein: the first layer of material includes aluminum, an aluminum alloy, silicon, aluminum/silicon or titanium.
Claim 5
Dependent Claim
12 words
A method according to claim 1, wherein: the hole is a via-hole.
Claim 6
Dependent Claim
64 words
A semiconductor device comprising: a substrate, a first layer of material on the substrate which first layer incorporates throughout a catalyst suited to facilitating the plating of a plating metal to be plated to the surface of the first layer; an insulation layer disposed over the first layer and having at least one hole therethrough, and plating metal filling said at least one hole.
Claim 7
Dependent Claim
64 words
A semiconductor device comprising: a substrate, a first layer of material on the substrate which first layer incorporates throughout a catalyst suited to facilitating the plating of a plating metal to be plated to the surface of the first layer; an insulation layer disposed over the first layer and having at least one hole therethrough, and plating metal filling said at least one hole.
Claim 8
Dependent Claim
23 words
A semiconductor device as claimed in claim 5, wherein: the first layer of material is aluminum, an aluminum alloy, silicon, aluminum/silicon or titanium.
Claim 9
Dependent Claim
12 words
A semiconductor device according to claim 5, wherein: the catalyst is palladium.
Claim 10
Dependent Claim
13 words
A semiconductor device according to claim 5, wherein: the plating metal is nickel.
Claim 11
Dependent Claim
16 words
A semiconductor device according to claim 5, wherein: each at least one hole is a via-hole.
Claim 12
Dependent Claim
21 words
A method according to claim 2, wherein: the first layer of material is aluminum, an aluminum alloy, silicon, aluminum/silicon or titanium.
Claim 13
Dependent Claim
12 words
A method according to claim 2, wherein: the hole is a via-hole.
Claim 14
Dependent Claim
12 words
A method according to claim 3, wherein: the hole is a via-hole.
Claim 15
Dependent Claim
12 words
A semiconductor device according to claim 6, wherein: the catalyst is palladium.
Claim 16
Dependent Claim
13 words
A semiconductor device according to claim 6, wherein: the plating metal is nickel.
Claim 17
Dependent Claim
13 words
A semiconductor device according to claim 7, wherein: the plating metal is nickel.
Claim 18
Dependent Claim
16 words
A semiconductor device according to claim 6, wherein: each at least one hole is a via-hole.
Claim 19
Dependent Claim
16 words
A semiconductor device according to claim 7, wherein: each at least one hole is a via-hole.
Claim 20
Dependent Claim
16 words
A semiconductor device according to claim 8, wherein: each at least one hole is a via-hole.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-12 | 1997-01-11 | 1997-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-12 | 2001-01-11 | 2001-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-12 | 2005-01-11 | 2005-07-13 | $7700.00 | Window Closed / Lapsed |