Patent US5280368A successfully refreshed from Google Patents.
Patent US5225367A successfully refreshed from Google Patents.
US5225367A
Expired / Lapsed
US
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Method for manufacturing an electronic device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1990-08-15
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Granted: 1993-07-06
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Expires: 2010-08-15
Abstract
Abstract A method of manufacturing an electronic device using boron nitrides comprises the steps of adding impurities in boron nitrides by ion implantation to form a doped region and directing a laser beam onto the doped region while the boron nitrides are placed in a vacuum or a non-oxidizing atmosphere.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Kenji Itoh
- 👤 Masaya Kadono
- 👤 Naoki Hirose
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:24
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/206; H10P30/28; H10P34/00; H10P34/40; H10P34/42; H10P72/00; H10P72/04; Y; Y10; Y10S; Y10S438/00; Y10S438/932
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
72 words
A method for manufacturing an electronic device comprising the steps of: forming a boron nitride layer on a substrate; forming a mask pattern on said boron nitride layer; forming an impurity region in said boron nitride layer by doping at least a portion of said boron nitride layer with impurities utilizing said mask pattern; and annealing said impurity region by radiating said impurity region with a laser beam in a non-oxidizing atmosphere.
Claim 2
Independent Claim
72 words
A method for manufacturing an electronic device comprising the steps of: forming a boron nitride layer on a substrate; forming a mask pattern on said boron nitride layer; forming an impurity region in said boron nitride layer by doping at least a portion of said boron nitride layer with impurities utilizing said mask pattern; and annealing said impurity region by radiating said impurity region with a laser beam in a non-oxidizing atmosphere.
Claim 3
Dependent Claim
19 words
The method for manufacturing an electronic device in claim 1 wherein said impurity region is formed by ion implantation.
Claim 4
Dependent Claim
27 words
The method for manufacturing an electronic device in claim 1 wherein said non-oxidizing atmosphere is maintained at a reduced pressure from 1×10 -6 to 1×10 -10 torr.
Claim 5
Dependent Claim
30 words
The method for manufacturing an electronic device in claim 1 wherein said non-oxidizing atmosphere comprises an inert gas selected from the group consisting of helium, neon, argon, krypton, xenon, radon.
Claim 6
Dependent Claim
18 words
The method for manufacturing an electronic device in claim 1 wherein said non-oxidizing atmosphere comprises a hydrogen gas.
Claim 7
Dependent Claim
29 words
The method for manufacturing an electronic device in claim 1 wherein said substrate is maintained at a temperature from liquid nitrogen temperature to 1400° C. during said annealing step.
Claim 8
Dependent Claim
17 words
The method for manufacturing an electronic device in claim 1 wherein said substrate is made from silicon.
Claim 9
Dependent Claim
31 words
The method for manufacturing an electronic device in claim 7 wherein said boron nitride layer reacts with said silicon at an interface therebetween to form an ohmic contact at said interface.
Claim 10
Dependent Claim
23 words
The method for manufacturing an electronic device in claim 1 wherein a wavelength of said laser beam is from 70 to 500 nm.
Claim 11
Dependent Claim
29 words
The method for manufacturing an electronic device in claim 1 wherein said impurities are elements selected from the group consisting of IIa and IVb elements of the periodic table.
Claim 12
Dependent Claim
44 words
The method for manufacturing an electronic device in claim 1 wherein said laser beam is emitted from an excimer laser selected from the group consisting of a KrF excimer laser, an F 2 excimer laser, an ArF excimer laser, and a KrCl excimer laser.
Claim 13
Dependent Claim
18 words
The method for manufacturing an electronic device in claim 1 wherein said laser beam is pulsed laser beams.
Claim 14
Dependent Claim
26 words
The method for manufacturing an electronic device in claim 12 wherein said pulsed laser beams are emitted at a pulse width not more than 1 msec.
Claim 15
Dependent Claim
27 words
The method for manufacturing an electronic device in claim 12 wherein said pulsed laser beams are emitted at a frequency of 1 to 30 pulse per second.
Claim 16
Independent Claim
42 words
A method for manufacturing an electronic device comprising the steps of: forming an impurity region in a boron nitride matter by doping at least a portion of said boron nitride matter with impurities; exposing said impurity region to a pulsed laser light.
Claim 17
Independent Claim
42 words
A method for manufacturing an electronic device comprising the steps of: forming an impurity region in a boron nitride matter by doping at least a portion of said boron nitride matter with impurities; exposing said impurity region to a pulsed laser light.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-07-05 | 1997-01-04 | 1997-07-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-05 | 2001-01-04 | 2001-07-06 | $3760.00 | Window Closed / Lapsed |
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