Multiple channel high electron mobility transistor

Claim 2

A field effect transistor structure formed in a substrate, having: source and drain contacts on a major surface of the substrate; a plurality of narrow bandgap conduction layers arranged as top to bottom layers, each layer having a thickness, for supporting conductive channels therein, each channel at a different depth below the gate; a gate disposed on the top conduction layer and between the source and drain contacts; a plurality of wide bandgap donor layers, alternating with the conduction layers, for providing carriers to the channels in the conduction layers; and, conductive regions in the substrate corresponding to, and in contact with, the source and drain contacts, the regions being spaced from the gate and extending through the plurality of conduction layers and in contact with the plurality of conductive channels therein; characterized by the thickness of the conduction layers, the depths of each channel below the gate, and the carrier concentration in the channels being selected to provide well defined pinch-off and saturation voltages and a substantially linear gate input voltage-to-output drain current transfer characteristic over substantially all gate input voltages between pinch-off and channel saturation; wherein the thicknesses of conduction layers decreases from the top to the bottom layers.

Claim 3

The field-effect transistor as recited in claim 1, wherein the gate is disposed on the major surface of the substrate.

Claim 4

The field-effect transistor as recited in claim 2, wherein the donor layers have approximately the same amount of donor impurities therein.

Claim 5

The field-effect transistor as recited in claim 1, further characterized by lightly doped region disposed between the gate and one of the conductive regions and having a resistivity greater than the conductive regions, wherein the gate input voltage-to-output drain current transfer characteristic is also determined by selecting the spacing between the gate and the one conductive region.

Claim 6

A field-effect transistor structure formed in a substrate, having: source and drain contacts on a major surface of the substrate; a plurality of narrow bandgap conduction layers, arranged as top to bottom layers, each layer having a thickness; a plurality of conductive channels, each channel disposed a different depth below the gate in the layers of narrow bandgap material, a gate disposed on the top narrow bandgap layer and between the source and drain contacts; a plurality of donor layers of doped wide bandgap material for providing carriers to the channels; and conductive regions in the substrate corresponding, and in contact with, the source and drain contacts, the regions being spaced from the gate and extending through the layers to contact the plurality of conductive channels; characterized by: the gate voltage-to-channel current transfer characteristic of each channel being substantially determined by selecting the thickness of the corresponding layers of narrow bandgap material, the depth of the channel below the gate, and the amount of carriers in the conductive channel, such that the sum of the current transfer characteristics for the channels has well defined pinch-off and saturation voltages and is substantially linear over substantially all gate input voltages between pinch-off and channel saturation; wherein the thicknesses of the narrow bandgap layers decreases from the top to the bottom layers.

Claim 7

A field-effect transistor structure formed in a substrate, having: source and drain contacts on a major surface of the substrate; a plurality of narrow bandgap conduction layers, arranged as top to bottom layers, each layer having a thickness; a plurality of conductive channels, each channel disposed a different depth below the gate in the layers of narrow bandgap material, a gate disposed on the top narrow bandgap layer and between the source and drain contacts; a plurality of donor layers of doped wide bandgap material for providing carriers to the channels; and conductive regions in the substrate corresponding, and in contact with, the source and drain contacts, the regions being spaced from the gate and extending through the layers to contact the plurality of conductive channels; characterized by: the gate voltage-to-channel current transfer characteristic of each channel being substantially determined by selecting the thickness of the corresponding layers of narrow bandgap material, the depth of the channel below the gate, and the amount of carriers in the conductive channel, such that the sum of the current transfer characteristics for the channels has well defined pinch-off and saturation voltages and is substantially linear over substantially all gate input voltages between pinch-off and channel saturation; wherein the thicknesses of the narrow bandgap layers decreases from the top to the bottom layers.

Claim 8

The field-effect transistor as recited in claim 5, wherein the gate is disposed on the major surface of the substrate.

Claim 9

The field-effect transistor as recited in claim 6, wherein the amount of dopant in each of the donor layers are approximately the same.

Claim 10

The field-effect transistor as recited in claim 7, further characterized by a lightly doped region disposed between the gate and one of the conductive regions and having a resistivity greater than the conductive regions, wherein the gate input voltage-to-output drain current transfer characteristic is also determined by selecting the spacing between the gate and the one conductive region.