Patent US5223305A successfully refreshed from Google Patents.
US5223305A
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US
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Apparatus for vapor deposition
Assignee: Sharp Corp
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Filing: 1991-05-13
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Granted: 1993-06-29
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Expires: 2011-05-13
Abstract
Abstract An apparatus for vapor deposition including a vapor deposition section to which at least one semiconductor material supply passage and at least one alkoxide material supply passage are connected, first heating means provided for the vapor deposition section and capable of maintaining the temperature thereof higher than that of the alkoxide supply passage, second heating means provided for the semiconductor material supply passage and capable of maintaining the temperature thereof higher than that of the vapor deposition section, and third heating means provided for the alkoxide material supply passage and capable of maintaining the temperature thereof constant, and a process for continuously forming a multilayered film on a substrate.
Inventors
- 👤 Koichi Tanaka
- 👤 Kousuke Terada
- 👤 Katsushi Okibayashi
- 👤 Akiyoshi Mikami
- 👤 Masaru Yoshida
- 👤 Shigeo Nakajima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:55
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/46; C23C16/455
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
97 words
An apparatus for vapor deposition comprising a vapor deposition section to which at least one semiconductor material supply passage and at least one alkoxide material supply passage are connected, first heating means provided for the vapor deposition section and capable of maintaining the temperature thereof higher than that of the alkoxide supply passage, second heating means provided for the semiconductor material supply passage and capable of maintaining the temperature thereof higher than that of the vapor deposition section, and third heating means provided for the alkoxide material supply passage and capable of maintaining the temperature thereof constant.
Claim 2
Independent Claim
97 words
An apparatus for vapor deposition comprising a vapor deposition section to which at least one semiconductor material supply passage and at least one alkoxide material supply passage are connected, first heating means provided for the vapor deposition section and capable of maintaining the temperature thereof higher than that of the alkoxide supply passage, second heating means provided for the semiconductor material supply passage and capable of maintaining the temperature thereof higher than that of the vapor deposition section, and third heating means provided for the alkoxide material supply passage and capable of maintaining the temperature thereof constant.
Claim 3
Dependent Claim
42 words
The apparatus of claim 1, wherein the vapor deposition section is centrally provided in an apparatus body and which is connected with the semiconductor material supply passage at one end while connected with the alkoxide material supply passage at the other end.
Claim 4
Dependent Claim
18 words
The apparatus of claim 1, further comprising means for controlling the first, second and third heating means independently.
Claim 5
Dependent Claim
47 words
The apparatus of claim 1, wherein the second heating means provided for the semiconductor material supply passage is composed of at least two heaters which are independently controlled by control means to heat a portion adjacent the vapor deposition section and a semiconductor material placed portion, respectively.
Claim 6
Dependent Claim
126 words
A process for continuously forming a multilayered film using the apparatus of claim 1 comprising the steps of: (I) raising the temperature of a substrate placed in the vapor deposition section to a predetermined temperature by actuating the first heating means; (II) forming a first insulating layer on the substrate by supplying thereto an alkoxide material heated by actuating the third heating means; (III) forming a semiconductor layer on the first insulating layer by varying the temperature of the substrate with the first heating means as well as by heating the semiconductor material supply passage with the second heating means; and (IV) forming a second insulating layer by further varying the temperature of the substrate with the first heating means and by conducting the step (II).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-28 | 1996-12-28 | 1997-06-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-28 | 2000-12-28 | 2001-06-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-28 | 2004-12-28 | 2005-06-29 | $7700.00 | Window Closed / Lapsed |