Charge coupled device and method of producing the same

Claim 1

A charge coupled device comprising: a first layer made of a first conductivity type semiconductor; a second layer made of a second conductivity type semiconductor and provided on the first layer, said first and second conductivity types being mutually opposite types selected from n-type and p-type conductivity types; a third layer made of the first conductivity type semiconductor and provided on the second layer; impurity diffusion regions provided in spaced relationship in at least a surface part of the third layer, every two mutually adjacent, spaced impurity diffusion regions defining a corresponding portion of the third layer therebetween, the impurity diffusion regions having an impurity density higher than that of the third layer; a first gate electrode corresponding to and provided, in insulated relationship, on each portion of the third layer between two mutually adjacent, spaced impurity diffusion regions; a second gate electrode corresponding to and provided on each impurity diffusion region of the third layer; each said impurity diffusion region forming a corresponding charge storage region of the charge coupled device; and each portion of said third layer, between the two mutually adjacent and corresponding impurity diffusion regions, forming a respectively corresponding potential barrier region of the charge coupled device.