Abstract In a method of heating a semiconductor substrate according to the present invention, a predetermined atmospheric gas such as N 2 , O 2 and H 2 , is sprayed onto the surface of an impurity layer formed by implanting ions into the main surface of the semiconductor substrate and, at the same time, the substrate is heated from a surface (interface of the impurity layer) opposite to the main surface, thereby annealing the substrate while keeping the temperature of the surface of the impurity layer lower than that of the interface. In this method, the temperature of the surface of the semiconductor substrate is made lower than that of the undersurface thereof so as to have a predetermined difference by the use of the cooling effect controlled by the flow rate of the atmospheric gas, and the semiconductor substrate is heated to have a gentle inclination of temperature in the substrate. It is thus possible to recover the crystallization of impurity layer from the interface of the impurity layer having perfect crystallization toward the surface thereof to eliminate defects in crystal occurring in the annealing operation for activation of impurity elements and recrystallization of the impurity layer.
A method of heating a semiconductor substrate comprising the steps of: introducing impurities into a predetermined region of a main surface of the semiconductor substrate; and spraying a gas onto a surface of an impurity layer formed by the introducing step while heating the substrate from an interface of the impurity layer and keeping the temperature of the surface of the impurity layer lower than that of the interface, thereby progressing recrystallization from the interface to the surface of the impurity layer to prevent defects in crystal of the impurity layer, wherein the temperature of the surface of the impurity layer is decreased by varying the flow rate of the gas sprayed onto the surface.
Claim 2
Independent Claim
115 words
A method of heating a semiconductor substrate comprising the steps of: introducing impurities into a predetermined region of a main surface of the semiconductor substrate; and spraying a gas onto a surface of an impurity layer formed by the introducing step while heating the substrate from an interface of the impurity layer and keeping the temperature of the surface of the impurity layer lower than that of the interface, thereby progressing recrystallization from the interface to the surface of the impurity layer to prevent defects in crystal of the impurity layer, wherein the temperature of the surface of the impurity layer is decreased by varying the flow rate of the gas sprayed onto the surface.
Claim 3
Independent Claim
119 words
A method of heating a semiconductor substrate comprising the steps of: introducing impurities into a predetermined region of a main surface of the semiconductor substrate; and spraying a gas onto a surface of an impurity layer formed by the introducing step while heating the substrate from an interface of the impurity layer and keeping the temperature of the surface of the impurity layer lower than that of the interface, thereby progressing recrystallization from the interface to the surface of the impurity layer to prevent defects in crystal of the impurity layer, wherein the temperature of the surface of the impurity layer is decreased by varying the temperature of the gas having a predetermined flow rate sprayed onto the surface.
Claim 4
Independent Claim
119 words
A method of heating a semiconductor substrate comprising the steps of: introducing impurities into a predetermined region of a main surface of the semiconductor substrate; and spraying a gas onto a surface of an impurity layer formed by the introducing step while heating the substrate from an interface of the impurity layer and keeping the temperature of the surface of the impurity layer lower than that of the interface, thereby progressing recrystallization from the interface to the surface of the impurity layer to prevent defects in crystal of the impurity layer, wherein the temperature of the surface of the impurity layer is decreased by varying the temperature of the gas having a predetermined flow rate sprayed onto the surface.