Mold-type semiconductor device

Claim 2

A semiconductor device, comprising: a first semiconductor element having a PN junction; a second semiconductor element having a PN junction; and a die stage having raised first and second connection surface areas; means for forming a difference in level between said die stage and each said first and second connection surface areas, said first and second connection surface areas each being located on opposite sides of said die stage, and said difference level forming means including a groove surrounding each said first and second connection surface areas of said die stage; and a layer of solder connecting each said first and second semiconductor elements respectively to said first and second connection surface areas.

Claim 3

A semiconductor device according to claim 1, wherein at least one of said first and second semiconductor elements is a mesa type.

Claim 4

A semiconductor device according to claim 1, wherein at least one of said first and second semiconductor elements is a planar type.

Claim 5

A semiconductor device according to claim 1, wherein said semiconductor device is molded in its outside with resin.

Claim 6

A semiconductor device according to claim 1, wherein said first and second connectors include copper.

Claim 7

A semiconductor device according to claim 1, wherein said die stage includes copper alloy.

Claim 8

A semiconductor device according to claim 1, wherein said first and second connection surface areas of said die stage are substantially the same in dimension and configuration.

Claim 9

A bridge type diode rectifier apparatus, comprising: a first semiconductor element having a PN junction; a second semiconductor element having a PN junction; a first die stage having raised first and second connection surface areas; first means for forming a difference in level between said first die stage and each said first and second connection surface areas, said first and second connection surface areas each being located on opposite sides of said first die stage, and said first difference level forming means including a first groove surrounding each said first and second connection surface areas of said first die stage; a first layer of solder connecting each said first and second semiconductor elements respectively to said first and second connection surface areas; a third semiconductor element having a PN junction; a fourth semiconductor element having a PN junction; a second die stage having raised third and fourth connection surface areas; second means for forming a difference in level between said second die stage and each said third and fourth connection surface areas, said third and fourth connection surface areas each being located on opposite sides of said second die stage, and said second difference level forming means including a second groove surrounding each said third and fourth connection surface areas of said second die stage; a second layer of solder connecting each said third and fourth semiconductor elements respectively to said third and fourth connection surface areas; a first connector connected to sides of said first and third semiconductor elements opposite said first and third connection surface areas, respectively; and a second connector connected to sides of said second and fourth semiconductor elements opposite said second and fourth connection surface areas, respectively; whereby said semiconductor elements and said connectors form a diode bridge circuit.

Claim 10

A bridge type diode rectifier apparatus, comprising: a first semiconductor element having a PN junction; a second semiconductor element having a PN junction; a first die stage having raised first and second connection surface areas; first means for forming a difference in level between said first die stage and each said first and second connection surface areas, said first and second connection surface areas each being located on opposite sides of said first die stage, and said first difference level forming means including a first groove surrounding each said first and second connection surface areas of said first die stage; a first layer of solder connecting each said first and second semiconductor elements respectively to said first and second connection surface areas; a third semiconductor element having a PN junction; a fourth semiconductor element having a PN junction; a second die stage having raised third and fourth connection surface areas; second means for forming a difference in level between said second die stage and each said third and fourth connection surface areas, said third and fourth connection surface areas each being located on opposite sides of said second die stage, and said second difference level forming means including a second groove surrounding each said third and fourth connection surface areas of said second die stage; a second layer of solder connecting each said third and fourth semiconductor elements respectively to said third and fourth connection surface areas; a first connector connected to sides of said first and third semiconductor elements opposite said first and third connection surface areas, respectively; and a second connector connected to sides of said second and fourth semiconductor elements opposite said second and fourth connection surface areas, respectively; whereby said semiconductor elements and said connectors form a diode bridge circuit.

Claim 11

The bridge type diode rectifier according to claim 8, wherein at least one of said first and second semiconductor elements is a mesa type.

Claim 12

The bridge type diode rectifier according to claim 8, wherein at least one of said first and second semiconductor elements ia a planar type.

Claim 13

The bridge type diode rectifier according to claim 8, wherein said semiconductor device is molded on an outer side of said semiconductor device with resin.

Claim 14

The bridge type diode rectifier according to claim 8, wherein each said first and second die stage and said first and second connector includes copper.

Claim 15

The bridge type diode rectifier according to claim 8, wherein said first and second die stages and said first and second connectors include copper alloy.

Claim 16

The bridge type diode rectifier according to claim 8, wherein said first and second connection surface areas of said first die stage are substantially the same in dimension and configuration, and said third and fourth connection surface areas of said second die stage are substantially the same in dimension and configuration.

Claim 17

The semiconductor device according to claim 1, wherein said means for forming the difference in level between said die stage and said surface areas is plasticized.

Claim 18

The semiconductor device according to claim 1, wherein said raised first and second connection surface areas are defined by embossed surface areas formed on the opposite sides of the die stage.

Claim 19

The semiconductor device according to claim 16, wherein said means for forming the difference in level between the die stage and each of the first and second connection surface areas forms an annular level difference.

Claim 20

The semiconductor device according to claim 1, wherein said groove extends immediately from each said first and second surface areas.

Claim 21

The bridge type diode rectifier according to claim 8, wherein said first means for forming the difference in level between said first die stage and each said first and second surface areas is plasticized.

Claim 22

The bridge type diode rectifier according to claim 8, wherein said second means for forming the difference in level between said second die stage and each said third and fourth surface areas is plasticized.

Claim 23

The bridge type diode rectifier according to claim 8, wherein said raised first and second connection surface areas are defined by embossed surface areas formed on the opposite sides of the first die stage.

Claim 24

The bridge type diode rectifier according to claim 21, wherein said first means for forming the difference in level between the first die stage and each of the first and second connection surface areas forms an annular level difference.

Claim 25

The bridge type diode rectifier according to claim 8, wherein said raised third and fourth connection surface areas are defined by embossed surface areas formed on the opposite sides of the second die stage.

Claim 26

The bridge type diode rectifier according to claim 23, wherein said second means for forming the difference in level between the second die stage and each of the third and fourth connection surface areas forms an annular level difference.

Claim 27

The bridge type diode rectifier according to claim 8, wherein said first groove extends immediately from each said first and second surface areas.

Claim 28

The bridge type diode rectifier according to claim 8, wherein said second groove extends immediately from each said third and fourth surface areas.