Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
177 words
A semiconductor assembly comprising, a substrate, a semiconductor chip having first and second surfaces, said chip having solder terminals on said first surface bonded to said substrate, a heat transfer element disposed closely adjacent to said second surface of said chip, a means to urge said transfer element into contact with said second surface, and a thin layer of heat conductive, non-eutectic metal alloy having a solidus temperature that is only slightly above the operating temperature range of said chip disposed between said heat transfer element and said chip, said material providing a highly thermally conductive heat transfer path between said chip and said heat transfer element, and having the ability to re-establish a low thermal resistance heat conductive path in the event that intimate contact between said material and said chip and/or said heat transfer element is disrupted by the reforming of the material when increased thermal resistance causes the chip temperature to exceed the solidus temperature of the material, and having the ability to remain in position between said chip and said heat transfer element.
Claim 2
Dependent Claim
177 words
A semiconductor assembly comprising, a substrate, a semiconductor chip having first and second surfaces, said chip having solder terminals on said first surface bonded to said substrate, a heat transfer element disposed closely adjacent to said second surface of said chip, a means to urge said transfer element into contact with said second surface, and a thin layer of heat conductive, non-eutectic metal alloy having a solidus temperature that is only slightly above the operating temperature range of said chip disposed between said heat transfer element and said chip, said material providing a highly thermally conductive heat transfer path between said chip and said heat transfer element, and having the ability to re-establish a low thermal resistance heat conductive path in the event that intimate contact between said material and said chip and/or said heat transfer element is disrupted by the reforming of the material when increased thermal resistance causes the chip temperature to exceed the solidus temperature of the material, and having the ability to remain in position between said chip and said heat transfer element.
Claim 3
Dependent Claim
40 words
A semiconductor assembly as in claim 1, wherein said heat transfer element is a spring type piston for providing a load force to said layer of conductive, non-eutectic metal alloy to increase the contact between said piston and said chip.
Claim 4
Dependent Claim
18 words
A semiconductor assembly as in claim 1, including solder ball connections for bonding said chip to said substrate.
Claim 5
Dependent Claim
21 words
A semiconductor assembly as in claim 2, including a hat for providing a cover for said assembly and for diffusing heat.
Claim 6
Dependent Claim
37 words
A semiconductor assembly as in claim 4, including a diagonal spring type piston for providing a load force to said heat transfer element to increase the contact between said element and said transfer chip and said hat.
Claim 7
Dependent Claim
17 words
A semiconductor assembly as in claim 5, wherein the piston is of a high thermal conductivity material.
Claim 8
Dependent Claim
35 words
A semiconductor assembly as in claim 4, wherein the thermal resistance between said hat and said heat transfer element is in the range of 0.01°-0.02° C. per watt for a contact load of 100 grams.
Claim 9
Dependent Claim
35 words
A semiconductor assembly as in claim 1, wherein the thermal resistance between said chip and said heat transfer element is in the range of 0.1°-0.2° C. per watt for a contact load of 100 grams.
Claim 10
Dependent Claim
15 words
A semiconductor assembly as in claim 1, wherein said noneutectic alloy is formed with bismuth.
Claim 11
Dependent Claim
24 words
A semiconductor assembly as in claim 1, wherein said alloy is made of 51.45% bismuth; 31.35% lead; 15.20% tin and 2.0% indium by weight.
Claim 12
Dependent Claim
24 words
A semiconductor assembly as in claim 1, wherein said alloy is made of 48.35% bismuth; 28.15% lead; 14.50% tin and 9.0% antimony by weight.
Claim 13
Dependent Claim
18 words
A semiconductor assembly as in claim 1, wherein the thickness of said alloy layer is about 2 mils.