US5217908A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having an insulator film of silicon oxide in which oh ions are incorporated
Assignee: Fujitsu Ltd
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Filing: 1991-06-20
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Granted: 1993-06-08
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Expires: 2011-06-20
Abstract
Abstract A method for fabricating a semiconductor device comprises the steps of providing an oxide film containing silicon and oxygen on a substrate, introducing species containing oxygen into the oxide film by an ion implantation process, and providing an electrode on the oxide film.
Inventors
- 👤 Toshiro Nakanishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:50
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01344; H10D64/01346; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10P; H10P30/00; H10P30/40
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
68 words
A method for fabricating a semiconductor device that includes a capacitor, comprising the steps of: providing an oxide film containing silicon and oxygen on a substrate as a dielectric film component of said capacitor, the dielectric film having an exposed surface; introducing species containing oxygen into the oxide film by ion implantation through the exposed surface of said dielectric film; and providing an electrode on the oxide film.
Claim 2
Independent Claim
68 words
A method for fabricating a semiconductor device that includes a capacitor, comprising the steps of: providing an oxide film containing silicon and oxygen on a substrate as a dielectric film component of said capacitor, the dielectric film having an exposed surface; introducing species containing oxygen into the oxide film by ion implantation through the exposed surface of said dielectric film; and providing an electrode on the oxide film.
Claim 3
Dependent Claim
24 words
A method as claimed in claim 1 in which said method further comprises annealing the oxide film after the ion implantation of said species.
Claim 4
Dependent Claim
14 words
A method as claimed in claim 1 in which said species comprises hydroxide ion.
Claim 5
Dependent Claim
28 words
A method as claimed in claim 3 in which said species is ion implanted at a dose in the range of 10 12 -10 14 cm -2 .
Claim 6
Dependent Claim
24 words
A method as claimed in claim 4 in which said species is ion implanted at a dose of about 10 12 cm -2 .
Claim 7
Dependent Claim
40 words
A method as claimed in claim 3 in which said species is ion implanted such that the silanol group is formed in the oxide film with a concentration level in the range of 10 20 -10 21 cm -3 .
Claim 8
Dependent Claim
14 words
A method as claimed in claim 1 in which said species comprises oxygen ions.
Claim 9
Dependent Claim
24 words
A method as claimed in claim 7 in which said species is ion implanted at a dose of about 10 14 cm -2 .
Claim 10
Dependent Claim
32 words
A method as claimed in claim 3 further comprising implanting said species such that the dose of the species has a maximum value approximately at the central level of the oxide film.
Claim 11
Independent Claim
112 words
A method for improving the electrical breakdown voltage of a dieletric film which comprises a component of a semiconductor device to be formed on a substrate, comprising: providing a substrate having a main surface on which is formed an oxide film, containing silicon and oxygen, for use as the dielectric film component of the semiconductor device, the oxide film having a first main surface on the main surface of the substrate and a second, exposed main surface; introducing species containing oxygen into the oxide film by ion implantation through the exposed, second main surface of the oxide film; and forming an electrode on the second, exposed main surface of the oxide film.
Claim 12
Independent Claim
112 words
A method for improving the electrical breakdown voltage of a dieletric film which comprises a component of a semiconductor device to be formed on a substrate, comprising: providing a substrate having a main surface on which is formed an oxide film, containing silicon and oxygen, for use as the dielectric film component of the semiconductor device, the oxide film having a first main surface on the main surface of the substrate and a second, exposed main surface; introducing species containing oxygen into the oxide film by ion implantation through the exposed, second main surface of the oxide film; and forming an electrode on the second, exposed main surface of the oxide film.
Claim 13
Dependent Claim
20 words
The method of claim 10, further comprising forming the oxide film and the electrode as associated components of a capacitor.
Claim 14
Dependent Claim
21 words
The method of claim 10, further comprising forming the oxide film and the electrode as associated components of a MOS diode.
Claim 15
Dependent Claim
20 words
The method of claim 10, further comprising forming the oxide film and the electrode as associated components of a MOSFET.
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JPS53121466A
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DD150274A1
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JPS61142755A
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JPS62166528A
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JPS63202033A
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JPH01199456A
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US5077225A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-06-07 | 1996-12-07 | 1997-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-07 | 2000-12-07 | 2001-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-07 | 2004-12-07 | 2005-06-08 | $7700.00 | Window Closed / Lapsed |