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US5217834A
Expired / Lapsed
US
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Methods of forming and inspecting semiconductor device patterns
Assignee: Toshiba Corp
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Filing: 1991-08-13
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Granted: 1993-06-08
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Expires: 2011-08-13
Abstract
Abstract Method of forming a pattern on a semiconductor wafer, the temperature of the semiconductor wafer being detected by a thermocouple. When the detected temperature is at a specified value which indicates that the deformation of the semiconductor wafer is within an allowable range, a step of forming a pattern on the semiconductor wafer is performed. This forming method improves the accuracy in forming the pattern. Also, in a method of inspecting a pattern on a semiconductor wafer, the temperature of the semiconductor wafer is detected using a thermocouple. When the detected temperature is at a specified value which indicates that the deformation of the semiconductor wafer is within an allowable range, a step of inspecting a pattern on the semiconductor wafer is performed. This inspecting method improves the accuracy in inspecting the pattern.
Inventors
- 👤 Tomotaka Higaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:53
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/20; H10P74/203; G; G03; G03F; G03F1/00; G03F1/68; G03F1/82; G03F1/84; G03F7/00; G03F7/20; G03F7/70; G03F7/70483; G03F7/70491; G03F7/70525; G03F7/70605; G03F7/70616; G03F7/708; G03F7/70858; G03F7/70866; G03F7/70875; H10P72/00; H10P72/06; H10P72/0602; H10P74/23
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
54 words
A method of forming a pattern for a semiconductor element, comprising the steps of: measuring the temperature of a semiconductor wafer by contacting temperature measuring means directly with said wafer; and exposing said wafer to a beam in order to form the pattern on said wafer when said temperature is at a specified value.
Claim 2
Independent Claim
54 words
A method of forming a pattern for a semiconductor element, comprising the steps of: measuring the temperature of a semiconductor wafer by contacting temperature measuring means directly with said wafer; and exposing said wafer to a beam in order to form the pattern on said wafer when said temperature is at a specified value.
Claim 3
Independent Claim
56 words
A method of forming a pattern for a semiconductor element, comprising the steps of: measuring the temperature distribution on a semiconductor wafer by contacting temperature measuring means directly with said wafer; and exposing said wafer to a beam in order to form the pattern on said wafer when said temperature distribution is at a specified value.
Claim 4
Independent Claim
56 words
A method of forming a pattern for a semiconductor element, comprising the steps of: measuring the temperature distribution on a semiconductor wafer by contacting temperature measuring means directly with said wafer; and exposing said wafer to a beam in order to form the pattern on said wafer when said temperature distribution is at a specified value.
Claim 5
Independent Claim
57 words
A method of forming a pattern for a semiconductor element, comprising the steps of: measuring the temperature of a glass mask by contacting temperature measuring means directly with said glass mask; and exposing said glass mask to a beam in order to form the pattern on said glass mask when said temperature is at a specified value.
Claim 6
Independent Claim
57 words
A method of forming a pattern for a semiconductor element, comprising the steps of: measuring the temperature of a glass mask by contacting temperature measuring means directly with said glass mask; and exposing said glass mask to a beam in order to form the pattern on said glass mask when said temperature is at a specified value.
Claim 7
Independent Claim
59 words
A method of forming a pattern for a semiconductor element, comprising the steps of: measuring the temperature distribution on a glass mask by contacting temperature measuring means directly with said glass mask; and exposing said glass mask to a beam in order to form the pattern on said glass mask when said temperature distribution is at a specified value.
Claim 8
Independent Claim
59 words
A method of forming a pattern for a semiconductor element, comprising the steps of: measuring the temperature distribution on a glass mask by contacting temperature measuring means directly with said glass mask; and exposing said glass mask to a beam in order to form the pattern on said glass mask when said temperature distribution is at a specified value.
Claim 9
Independent Claim
49 words
A method of inspecting a pattern for a semiconductor element, comprising the steps of: measuring the temperature of a semiconductor wafer having the pattern thereon by contacting temperature measuring means directly with said wafer; and inspecting the pattern on said wafer when said temperature is at a specified value.
Claim 10
Independent Claim
49 words
A method of inspecting a pattern for a semiconductor element, comprising the steps of: measuring the temperature of a semiconductor wafer having the pattern thereon by contacting temperature measuring means directly with said wafer; and inspecting the pattern on said wafer when said temperature is at a specified value.
Claim 11
Independent Claim
52 words
A method of inspecting a pattern for a semiconductor element, comprising the steps of: measuring the temperature distribution on a semiconductor wafer having the pattern thereon by contacting temperature measuring means directly with the said wafer; and inspecting the pattern on said wafer when said temperature distribution is at a specified value.
Claim 12
Independent Claim
52 words
A method of inspecting a pattern for a semiconductor element, comprising the steps of: measuring the temperature distribution on a semiconductor wafer having the pattern thereon by contacting temperature measuring means directly with the said wafer; and inspecting the pattern on said wafer when said temperature distribution is at a specified value.
Claim 13
Independent Claim
51 words
A method of inspecting a pattern for a semiconductor element, comprising the steps of: measuring the temperature of a glass mask having the pattern thereon by contracting temperature measuring means directly with said glass mask; and inspecting the pattern on said glass mask when said temperature is at a specified value.
Claim 14
Independent Claim
51 words
A method of inspecting a pattern for a semiconductor element, comprising the steps of: measuring the temperature of a glass mask having the pattern thereon by contracting temperature measuring means directly with said glass mask; and inspecting the pattern on said glass mask when said temperature is at a specified value.
Claim 15
Independent Claim
53 words
A method of inspecting a pattern for a semiconductor element, comprising the steps of: measuring the temperature distribution on a glass mask having the pattern thereon by contacting temperature measuring means directly with said glass mask; and inspecting the pattern on said glass mask when said temperature distribution is at a specified value.
Claim 16
Independent Claim
53 words
A method of inspecting a pattern for a semiconductor element, comprising the steps of: measuring the temperature distribution on a glass mask having the pattern thereon by contacting temperature measuring means directly with said glass mask; and inspecting the pattern on said glass mask when said temperature distribution is at a specified value.
References Cited (Backward Citations)
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