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US5216633A
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Nonvolatile semiconductor memory device including access code circuitry
Assignee: Samsung Electronics Co Ltd
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Filing: 1991-05-02
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Granted: 1993-06-01
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Expires: 2011-05-02
Abstract
Abstract In a nonvolatile semiconductor memory device having a plurality of word lines, bit lines, sense lines, nonvolatile semiconductor memory cells, column selecting transistors, a page buffer circuit, data lines, an input driver/sense amplifier, an input buffer an input/output register and a comparator, a secret access code is defined in such a manner that a first secret access code is latched in the page buffer circuit, a second secret access code inputted by the input buffer is compared with the first secret access code read by the input/output register by bytes in the comparator, and if the first and second access codes match, the first secret access code latched in the page buffer is written in the cells of the row line designated in advance among the nonvolatile memory cells.
Inventors
- 👤 Dae-sik Weon
- 👤 Jun-sik Hwangbo
- 👤 Jae-Young Do
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:29
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G06; G06F; G06F21/00; G06F21/70; G06F21/78; G06F21/79; G11C16/06; G11C16/22; G11C8/00; G11C8/20
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
317 words
A nonvolatile semiconductor memory device storing an access code for access to said device, comprising: a plurality of word lines extending in a first direction; a plurality of bit lines extending in a second direction perpendicular to and intersecting said word lines; a plurality of nonvolatile semiconductor memory cells disposed at each intersection of said word lines and bit lines and connected therebetween for storing bits of data in said semiconductor memory cells; means for selecting predetermined groups of semiconductor memory cells in said first direction in units of bytes through said bit lines; a plurality of data lines connected to said plurality of bit lines through said means for selecting; data input/sensing means for inputting data to said semiconductor memory cells through said data lines and said bit lines and for outputting data from said data lines; page buffer means connected to said plurality of bit lines for temporarily latching access code data from said data input/sensing means; input data buffer means for inputting serial data from an input terminal; an input/output register for reading serial data from said input data buffer means, transferring data in parallel with said data input/sensing means, and outputting serial data at an output terminal thereof; and a comparator for comparing serial access code data from said input data buffer means with serial access code data at said output terminal of said input/output register; said access code being defined by first inputting said access code from said input data buffer means through said input/output register and said data input/sensing means and latching said access code in said page buffer means, inputting said access code again from said input data buffer means to said input/output register, said access code latched in said page buffer means being compared with the access code in said input/output register by said comparator and written into semiconductor memory cells of a predetermined word line upon matching therewith.
Claim 2
Dependent Claim
317 words
A nonvolatile semiconductor memory device storing an access code for access to said device, comprising: a plurality of word lines extending in a first direction; a plurality of bit lines extending in a second direction perpendicular to and intersecting said word lines; a plurality of nonvolatile semiconductor memory cells disposed at each intersection of said word lines and bit lines and connected therebetween for storing bits of data in said semiconductor memory cells; means for selecting predetermined groups of semiconductor memory cells in said first direction in units of bytes through said bit lines; a plurality of data lines connected to said plurality of bit lines through said means for selecting; data input/sensing means for inputting data to said semiconductor memory cells through said data lines and said bit lines and for outputting data from said data lines; page buffer means connected to said plurality of bit lines for temporarily latching access code data from said data input/sensing means; input data buffer means for inputting serial data from an input terminal; an input/output register for reading serial data from said input data buffer means, transferring data in parallel with said data input/sensing means, and outputting serial data at an output terminal thereof; and a comparator for comparing serial access code data from said input data buffer means with serial access code data at said output terminal of said input/output register; said access code being defined by first inputting said access code from said input data buffer means through said input/output register and said data input/sensing means and latching said access code in said page buffer means, inputting said access code again from said input data buffer means to said input/output register, said access code latched in said page buffer means being compared with the access code in said input/output register by said comparator and written into semiconductor memory cells of a predetermined word line upon matching therewith.
Claim 3
Dependent Claim
58 words
A nonvolatile semiconductor memory device as claimed in claim 1, wherein said page buffer means comprises buffers connected to bit lines respectively via transistors switched by a bit line selecting signal and buffers connected to sense lines provided in said second direction for each byte of data memory cells respectively via transistors switched by a sense selecting signal.
Claim 4
Dependent Claim
29 words
A nonvolatile semiconductor memory device as claimed in claim 1, wherein said memory cells of the predetermined word line in which said access code is written are dummy cells.
Claim 5
Dependent Claim
23 words
A nonvolatile semiconductor memory device as claimed in claim 1, wherein said nonvolatile memory cells are electrically erasable programmable read only memory cells.
Claim 6
Dependent Claim
33 words
A nonvolatile semiconductor memory device as claimed in claim 1, wherein said access code inputted to said input/output register is a confirmation for said first access code latched in said page buffer means.
References Cited (Backward Citations)
US4864542A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-31 | 1996-11-30 | 1997-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-31 | 2000-11-30 | 2001-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-31 | 2004-11-30 | 2005-06-01 | $7700.00 | Window Closed / Lapsed |