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US5216275A
Expired / Lapsed
US
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Semiconductor power devices with alternating conductivity type high-voltage breakdown regions
Assignee: POWER MOSFET TECHNOLOGIES LLP
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Filing: 1991-09-17
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Granted: 1993-06-01
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Expires: 2011-09-17
Abstract
Abstract A semiconductor power device wherein the reverse voltage across the p + -regions(s) and the n + -regions(s) is sustained by a composite buffer layer, shortly as CB-layer. The CB-layer contains two kinds of semiconductor regions with opposite types of conduction. These two kinds of regions are alternatively arranged, viewed from any cross-section parallel to the interface between the layer itself and the n + (or p + )-region. Whereas the hitherto-used voltage sustaining layer contains only one kind of semiconductor with single type of conduction in the same sectional view. Design guidelines are also provided in this invention. The relation between the on-resistance in unit area Ron and the breakdown voltage V B of the CB-layer invented is Ron ocV B 113 which represents a breakthrough to the conventional voltage sustaining layer, whereas the other performances of the power devices remain almost unchanged.
Inventors
- 👤 Xingbi Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:23
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D10/00; H10D12/00; H10D12/211; H10D12/212; H10D30/668; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/109; H10D62/111; H10D8/00; H10D62/113; H10D62/115; H10D62/116; H10D62/17; H10D62/393
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
137 words
A semiconductor power device comprising: a first contact layer of a first conductivity type; a second contact layer of a second conductivity type; and a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type, said first and second semiconductor regions being alternately arranged, the voltage sustaining layer further comprising a thin dielectric layer located between one of said first semiconductor regions and one of said second semiconductor regions for isolating said one of said first semiconductor regions and said one of said second semiconductor regions, the first contact layer contacting said first semiconductor region forming a first interface, the second contact layer contacting the first and second semiconductor regions directly forming a second interface.
Claim 2
Dependent Claim
137 words
A semiconductor power device comprising: a first contact layer of a first conductivity type; a second contact layer of a second conductivity type; and a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type, said first and second semiconductor regions being alternately arranged, the voltage sustaining layer further comprising a thin dielectric layer located between one of said first semiconductor regions and one of said second semiconductor regions for isolating said one of said first semiconductor regions and said one of said second semiconductor regions, the first contact layer contacting said first semiconductor region forming a first interface, the second contact layer contacting the first and second semiconductor regions directly forming a second interface.
Claim 3
Dependent Claim
26 words
The semiconductor power device according to claim 1, wherein the first contact layer is isolated from the second semiconductor regions by a second thin dielectric layer.
Claim 4
Dependent Claim
84 words
The semiconductor device of claim 1, wherein said first and second interfaces are parallel to each other and perpendicular to the plane of the dielectric layer between said one of said first semiconductor regions and said one of said second semiconductor regions, and wherein the first and second semiconductor regions are shaped in a manner that in a cross-section of the voltage sustaining layer parallel to the first and second interface, the first and second semiconductor regions are square-shaped and form a mosaic pattern.
Claim 5
Dependent Claim
127 words
The semiconductor device of claim 1, wherein said first and second interfaces are parallel to each other and perpendicular to the plane of the dielectric layer between said one of said first semiconductor regions and said one of said second semiconductor regions, and wherein the first and second semiconductor regions are shaped in a manner that in a cross-section of the voltage sustaining layer parallel to the first and second interface, one of the first semiconductor regions and one of the second semiconductor regions form a close-packed hexagonal unit, and the dielectric layer forms a circle about the center of the hexagonal unit with one of said first (or second) semiconductor regions within the circle and one of said second (or first) semiconductor regions outside the circle.
Claim 6
Dependent Claim
40 words
The semiconductor device of claim 1, wherein the first contact layer is an n + layer, the second contact layer is a p + layer, the first semiconductor regions are n regions and the second semiconductor regions are p regions.
Claim 7
Dependent Claim
40 words
The semiconductor device of claim 1, wherein the first contact layer is a p + layer, the second contact layer is an n + layer, the first semiconductor regions are p regions and the second semiconductor regions are n regions.
Claim 8
Dependent Claim
51 words
The semiconductor power device according to claim 1, wherein the first and second semiconductor regions are doped with dopants and the total charge of the effective dopant concentration in the first semiconductor region does not exceed the total charge of the effective dopant concentration of the second semiconductor region by 50%.
Claim 9
Dependent Claim
25 words
The semiconductor power device according to claim 6, wherein the cross-sectional area of each first semiconductor region is not equal to each second semiconductor region.
Claim 10
Dependent Claim
36 words
The semiconductor power device according to claim 1, wherein the first and second semiconductor regions are doped with dopants and the effective charge distribution of dopants in every region of the voltage sustaining layer is uniform.
Claim 11
Dependent Claim
77 words
The semiconductor power device according to claim 1, wherein the first and second semiconductor regions are doped with dopants and the effective dopant distribution in every region in the voltage sustaining region is non-uniform, the dopant concentration in the first semiconductor regions is greater near the first contact layer than near the second contact layer, and the dopant concentration in the second semiconductor regions is greater near the second contact layer than near the first contact layer.
Claim 12
Dependent Claim
173 words
A semiconductor power device comprising: a first contact layer of a first conductivity type; a second contact layer of a second conductivity type; and a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type, said first and second semiconductor regions being alternately arranged, the first contact layer contacting all said first semiconductor regions and said second semiconductor regions to form a first interface, the second contact layer contacting with all the first and second semiconductor regions to form a second interface wherein the first and second semiconductor regions are doped with dopants and the effective dopant distribution in every region in the voltage sustaining region is non-uniform, the dopant concentration in the first semiconductor regions is greater near the first contact layer than near the second contact layer and the dopant concentration in the second semiconductor regions is greater near the second contact layer than near the first contact layer.
Claim 13
Dependent Claim
173 words
A semiconductor power device comprising: a first contact layer of a first conductivity type; a second contact layer of a second conductivity type; and a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type, said first and second semiconductor regions being alternately arranged, the first contact layer contacting all said first semiconductor regions and said second semiconductor regions to form a first interface, the second contact layer contacting with all the first and second semiconductor regions to form a second interface wherein the first and second semiconductor regions are doped with dopants and the effective dopant distribution in every region in the voltage sustaining region is non-uniform, the dopant concentration in the first semiconductor regions is greater near the first contact layer than near the second contact layer and the dopant concentration in the second semiconductor regions is greater near the second contact layer than near the first contact layer.
Claim 14
Dependent Claim
46 words
The semiconductor device of claim 11, wherein the first contact layer is an n + layer, the second contact layer is a p + layer, the first semiconductor regions are n regions doped with donors and the second semiconductor regions are p regions doped with acceptors.
Claim 15
Dependent Claim
47 words
The semiconductor device of claim 11, wherein the doped first contact layer is a p + layer, the second contact layer is an n + layer, the first semiconductor regions are p regions doped with acceptors and the second semiconductor regions are n regions doped with donors.
Claim 16
Dependent Claim
186 words
A semiconductor power device comprising: a first contact layer of a first conductivity type; a second contact layer of a second conductivity type; and a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type which are alternately arranged, the first contact layer contacting all said first semiconductor regions and said second semiconductor regions to form a first interface, the second contact layer contacting with all the first and second semiconductor regions directly to form a second interface wherein said first and second interface are parallel to each other and wherein the first and second semiconductor regions are shaped in a manner that in a cross-section of the voltage sustaining layer parallel to the first and second interface, one of the first semiconductor regions and one of the second semiconductor regions form a close packed hexagonal unit, the first semiconductor region is within a circle about the center of the close-packed hexagonal unit and one of said second semiconductor regions is outside the circle.
Claim 17
Dependent Claim
186 words
A semiconductor power device comprising: a first contact layer of a first conductivity type; a second contact layer of a second conductivity type; and a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type which are alternately arranged, the first contact layer contacting all said first semiconductor regions and said second semiconductor regions to form a first interface, the second contact layer contacting with all the first and second semiconductor regions directly to form a second interface wherein said first and second interface are parallel to each other and wherein the first and second semiconductor regions are shaped in a manner that in a cross-section of the voltage sustaining layer parallel to the first and second interface, one of the first semiconductor regions and one of the second semiconductor regions form a close packed hexagonal unit, the first semiconductor region is within a circle about the center of the close-packed hexagonal unit and one of said second semiconductor regions is outside the circle.
Claim 18
Dependent Claim
40 words
The semiconductor device of claim 14, wherein the first contact layer is an n + layer, the second contact layer is a p + layer, the first semiconductor regions are n regions and the second semiconductor regions are p regions.
Claim 19
Dependent Claim
40 words
The semiconductor device of claim 14, wherein the first contact layer is a p + layer, the second contact layer is an n + layer, the first semiconductor regions are p regions and the second semiconductor regions are n regions.
Claim 20
Dependent Claim
157 words
A semiconductor power device comprising: a first contact layer of a first conductivity type; a second contact layer of a second conductivity type; and a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type, said first and second semiconductor regions being alternately arranged, the first contact layer contacting said first semiconductor regions and said second semiconductor regions to form a first interface, the second contact layer contacting with all the first and second semiconductor regions directly to form a second interface wherein said first and second interface are parallel to each other and wherein the first and second semiconductor regions are shaped in a manner that in a cross-section of the voltage sustaining layer parallel to the first and second interface, the first and second semiconductor regions are square-shaped and form a mosaic pattern.
Claim 21
Dependent Claim
157 words
A semiconductor power device comprising: a first contact layer of a first conductivity type; a second contact layer of a second conductivity type; and a voltage sustaining layer between said first and second contact layers, said voltage sustaining layer comprising first semiconductor regions of the first conductivity type and second semiconductor regions of a second conductivity type, said first and second semiconductor regions being alternately arranged, the first contact layer contacting said first semiconductor regions and said second semiconductor regions to form a first interface, the second contact layer contacting with all the first and second semiconductor regions directly to form a second interface wherein said first and second interface are parallel to each other and wherein the first and second semiconductor regions are shaped in a manner that in a cross-section of the voltage sustaining layer parallel to the first and second interface, the first and second semiconductor regions are square-shaped and form a mosaic pattern.
Claim 22
Dependent Claim
40 words
The semiconductor device of claim 17, wherein the first contact layer is an n + layer, the second contact layer is a p + layer, the first semiconductor regions are n regions and the second semiconductor regions are p regions.
Claim 23
Dependent Claim
40 words
The semiconductor device of claim 17, wherein the first contact layer is a p + layer, the second contact layer is an n + layer, the first semiconductor regions are p regions and the second semiconductor regions are n regions.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-05-31 | 1996-11-30 | 1997-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-31 | 2000-11-30 | 2001-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-31 | 2004-11-30 | 2005-06-01 | $7700.00 | Window Closed / Lapsed |