High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays

Claim 2

A high density, surface emitting, semiconductor light emitting diode (LED) array comprising: a first semiconductor confinement layer deposited on a substrate, said first confinement layer and said substrate having the same conductivity type, an active semiconductor layer deposited on said first confinement layer, said active layer providing lightwave generation and propagation, said active layer having a smaller bandgap than said first confinement layer, a second semiconductor confinement layer deposited on said active layer, said second confinement layer having a conductivity type opposite that of said first confinement layer and said substrate, a semiconductor contact layer deposited on said second semiconductor confinement layer, said contact layer and said second confinement layer having the same conductivity type, disordered regions extending through said contact layer, said second confinement layer, said active layer and at least partially through said first confinement layer, said disordered regions having a conductivity type opposite that of said contact layer and said second confinement layer, at least one trough formed in said substrate exposing a surface of said first confinement layer, at least one contact formed on said substrate, said at least one contact not formed in said trough, and light emitting areas formed between said disordered regions, contacts formed on said contact layer, one of said contacts formed on said contact layer aligned with each of said light emitting areas such that current injected between one of said contacts on said contact layer and said at least one contact on said substrate will cause light emission from one of said light emitting areas through the exposed surface of said first confinement layer in said trough in said substrate.

Claim 3

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 wherein said substrate, said first confinement layer and said disordered regions have n-type conductivity and said second confinement layer and said contact layer have p-type conductivity.

Claim 4

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 wherein said light emitting areas comprise the nondisordered portions of the second confinement layer, the nondisordered portions of the active layer and the nondisordered portions of the first confinement layer between adjacent said disordered regions.

Claim 5

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 wherein an electrically insulating region is formed on each of said disordered regions.

Claim 6

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 further comprising a refractive semiconductor layer deposited on said substrate, said first semiconductor confinement layer deposited on said refractive layer, said at least one trough formed in said substrate exposing a surface of said refractive layer, and said light emission from one of said light emitting areas passes through the surface of said refractive layer in said trough in said substrate.

Claim 7

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 further comprising a third semiconductor confinement layer deposited on said first confinement layer, said active layer deposited on said third semiconductor confinement layer, a fourth semiconductor confinement layer deposited on said active layer, and said second semiconductor confinement layer deposited on said fourth semiconductor confinement layer, wherein said third and fourth confinement layers have bandgaps intermediate between the bandgaps of said active layer and said first and second confinement layers.

Claim 8

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 further comprising an anti-reflective coating on said exposed surface of said first confinement layer in said at least one trough in said substrate.

Claim 9

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 further comprising fresnel lenses etched over said light emitting areas on said exposed surface of said first confinement layer in said trough in said substrate.

Claim 10

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 further comprising a micro lens array positioned over said light emitting areas on said exposed surface of said first confinement layer in said trough in said substrate.

Claim 11

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 1 wherein said light emitting areas form a two-dimensional array.

Claim 12

A high density, surface emitting, semiconductor light emitting diode (LED) array comprising: a first semiconductor confinement layer deposited on a substrate, said first confinement layer and said substrate having the same conductivity type, an active semiconductor layer deposited on said first confinement layer, said active layer providing lightwave generation and propagation, said active layer having a smaller bandgap than said first confinement layer, alternating semiconductor layers deposited on said active layer, said alternating layers forming a distributed Bragg reflector (DBR), said DBR having a conductivity type opposite that of said first confinement layer and said substrate, a semiconductor contact layer deposited on said DBR, said contact layer and said DBR having the same conductivity type, disordered regions extending through said contact layer, said DBR, said active layer and at least partially through said first confinement layer, said disordered regions having a conductivity type opposite that of said contact layer and said DBR, at least one trough formed in said substrate exposing a surface of said first confinement layer, at least one contact formed on said substrate, said at least one contact not formed in said trough, and light emitting areas formed between said disordered regions, contacts formed on said contact layer, one of said contacts formed on said contact layer aligned with each of said light emitting areas such that current injected between one of said contacts on said contact layer and said at least one contact on said substrate will cause light emission from one of said light emitting areas through the exposed surface of said first confinement layer in said trough in said substrate.

Claim 13

A high density, surface emitting, semiconductor light emitting diode (LED) array comprising: a first semiconductor confinement layer deposited on a substrate, said first confinement layer and said substrate having the same conductivity type, an active semiconductor layer deposited on said first confinement layer, said active layer providing lightwave generation and propagation, said active layer having a smaller bandgap than said first confinement layer, alternating semiconductor layers deposited on said active layer, said alternating layers forming a distributed Bragg reflector (DBR), said DBR having a conductivity type opposite that of said first confinement layer and said substrate, a semiconductor contact layer deposited on said DBR, said contact layer and said DBR having the same conductivity type, disordered regions extending through said contact layer, said DBR, said active layer and at least partially through said first confinement layer, said disordered regions having a conductivity type opposite that of said contact layer and said DBR, at least one trough formed in said substrate exposing a surface of said first confinement layer, at least one contact formed on said substrate, said at least one contact not formed in said trough, and light emitting areas formed between said disordered regions, contacts formed on said contact layer, one of said contacts formed on said contact layer aligned with each of said light emitting areas such that current injected between one of said contacts on said contact layer and said at least one contact on said substrate will cause light emission from one of said light emitting areas through the exposed surface of said first confinement layer in said trough in said substrate.

Claim 14

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 wherein said substrate, said first confinement layer and said disordered regions have n-type conductivity and said DBR and said contact layer have p-type conductivity.

Claim 15

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 wherein said light emitting areas comprise the nondisordered portions of the DBR, the nondisordered portions of the active layer and the nondisordered portions of the first confinement layer between adjacent said disordered regions.

Claim 16

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 wherein an electrically insulating region is formed on each of said disordered regions.

Claim 17

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 further comprising a refractive semiconductor layer deposited on said substrate, said first semiconductor confinement layer deposited on said refractive layer, said at least one trough formed in said substrate exposing a surface of said refractive layer, and said light emission from one of said light emitting areas passes through the surface of said refractive layer in said trough in said substrate.

Claim 18

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 further comprising a second semiconductor confinement layer deposited on said first confinement layer which was deposited on said substrate, said active layer deposited on said second semiconductor confinement layer, a third semiconductor confinement layer deposited on said active layer, and said DBR deposited on said third semiconductor confinement layer, wherein said second and third confinement layers have bandgaps intermediate between the bandgaps of said active layer, and said first confinement layer and said DBR.

Claim 19

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 further comprising an anti-reflective coating on said exposed surface of said confinement layer in said at least one trough in said substrate.

Claim 20

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 further comprising fresnel lenses etched over said light emitting areas on said exposed surface of said first confinement layer in said trough in said substrate.

Claim 21

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 further comprising a micro lens array positioned over said light emitting areas on said exposed surface of said first confinement layer in said trough in said substrate.

Claim 22

The high density, surface emitting, semiconductor light emitting diode (LED) array of claim 11 wherein said light emitting areas form a two-dimensional array.

Claim 23

A high density, surface emitting, semiconductor laser array comprising: alternating semiconductor layers deposited on a substrate, said alternating layers forming a first distributed Bragg reflector (DBR), said first DBR and said substrate having the same conductivity type, an active semiconductor layer deposited on said first DBR, said active layer providing lightwave generation and propagation under lasing conditions, said active layer having a smaller bandgap than said first DBR, alternating semiconductor layers deposited on said active layer, said alternating layers forming a second distributed Bragg reflector (DBR), said second DBR having a conductivity type opposite that of said first DBR and said substrate, a semiconductor contact layer deposited on said second DBR, said contact layer and said second DBR having the same conductivity type, disordered regions extending through said contact layer, said second DBR, said active layer and at least partially through said first DBR, said disordered regions having a conductivity type opposite that of said contact layer and said second DBR, at least one trough formed in said substrate exposing a surface of said first DBR, at least one contact formed on said substrate, said at least one contact not formed in said trough, and optical cavities formed between said disordered regions, contacts formed on said contact layer, one of said contacts formed on said contact layer aligned with each of said optical cavities such that current injected between one of said contacts on said contact layer and said at least one contact on said substrate will cause light emission from one of said optical cavities through the exposed surface of said first DBR in said trough in said substrate.

Claim 24

A high density, surface emitting, semiconductor laser array comprising: alternating semiconductor layers deposited on a substrate, said alternating layers forming a first distributed Bragg reflector (DBR), said first DBR and said substrate having the same conductivity type, an active semiconductor layer deposited on said first DBR, said active layer providing lightwave generation and propagation under lasing conditions, said active layer having a smaller bandgap than said first DBR, alternating semiconductor layers deposited on said active layer, said alternating layers forming a second distributed Bragg reflector (DBR), said second DBR having a conductivity type opposite that of said first DBR and said substrate, a semiconductor contact layer deposited on said second DBR, said contact layer and said second DBR having the same conductivity type, disordered regions extending through said contact layer, said second DBR, said active layer and at least partially through said first DBR, said disordered regions having a conductivity type opposite that of said contact layer and said second DBR, at least one trough formed in said substrate exposing a surface of said first DBR, at least one contact formed on said substrate, said at least one contact not formed in said trough, and optical cavities formed between said disordered regions, contacts formed on said contact layer, one of said contacts formed on said contact layer aligned with each of said optical cavities such that current injected between one of said contacts on said contact layer and said at least one contact on said substrate will cause light emission from one of said optical cavities through the exposed surface of said first DBR in said trough in said substrate.

Claim 25

The high density, surface emitting, semiconductor laser array of claim 21 wherein said substrate, said first DBR and said disordered regions have n-type conductivity and said second DBR and said contact layer have p-type conductivity.

Claim 26

The high density, surface emitting, semiconductor laser array of claim 21 wherein said optical cavities comprises the nondisordered portions of the second DBR, the nondisordered portions os the active layer and the nondisordered portions of the first DBR between adjacent said disordered regions.

Claim 27

The high density, surface emitting, semiconductor laser array of claim 21 wherein an electrically insulating region is formed on each of said disordered regions.

Claim 28

The high density, surface emitting, semiconductor laser array of claim 21 further comprising a refractive semiconductor layer deposited on said substrate, said first DBR deposited on said refractive layer, said at least one trough formed in said substrate exposing a surface of said refractive layer, and said light emission from one of said optical cavities passes through the surface of said refractive layer in said trough in said substrate.

Claim 29

The high density, surface emitting, semiconductor laser array of claim 21 further comprising a first semiconductor confinement layer deposited on said first DBR, said active layer deposited on said first semiconductor confinement layer, a second semiconductor confinement layer deposited on said active layer, and said second DBR deposited on said second semiconductor confinement layer, wherein said first and second confinement layer have bandgaps intermediate between the bandgaps of said active layer and said first and second DBRs.

Claim 30

The high density, surface emitting, semiconductor laser array of claim 21 further comprising fresnel lenses etched over said optical cavities on said exposed surface of said first DBR in said trough in said substrate.

Claim 31

The high density, surface emitting, semiconductor laser array of claim 21 further comprising a micro lens array positioned over said optical cavities on said exposed surface of said first DBR in said trough in said substrate.

Claim 32

The high density, surface emitting, semiconductor laser array of claim 21 wherein said optical cavities form a two-dimensional array.

Claim 33

A high density, surface emitting, semiconductor laser array comprising: a first semiconductor confinement layer deposited on a substrate, said first confinement layer and said substrate having the same conductivity type, an active semiconductor layer deposited on a said first confinement layer, said active layer providing lightwave generation and propagation under lasing conditions, said active layer having a smaller bandgap than said first confinement layer, alternating semiconductor layer deposited on said active layer, said alternating layers forming a distributed Bragg reflector (DBR), said DBR having a conductivity type opposite that of said first confinement layer and said substrate, a semiconductor contact layer deposited on said DBR, said contact layer and said DBR having the same conductivity type, disordered regions extending through said contact layer, said DBR, said active layer and at least partially through said first confinement layer, said disordered regions having a conductivity type opposite that of said contact layer and said DBR, at least one trough formed in said substrate exposing a surface of said first confinement layer, a high reflectivity coating deposited on said exposed surface of said first confinement layer in said trough in said substrate, at least one contact formed on said substrate, said at least one contact not formed in said trough, and optical cavities formed between said disordered regions, contacts formed on said contact layer, one of said contacts formed on said contact layer aligned with each of said optical cavities such that current injected between one of said contacts on said contact layer and said at least one contact on said substrate will cause light emission from one of said optical cavities through the exposed surface of said first confinement layer in said trough in said substrate.

Claim 34

A high density, surface emitting, semiconductor laser array comprising: a first semiconductor confinement layer deposited on a substrate, said first confinement layer and said substrate having the same conductivity type, an active semiconductor layer deposited on a said first confinement layer, said active layer providing lightwave generation and propagation under lasing conditions, said active layer having a smaller bandgap than said first confinement layer, alternating semiconductor layer deposited on said active layer, said alternating layers forming a distributed Bragg reflector (DBR), said DBR having a conductivity type opposite that of said first confinement layer and said substrate, a semiconductor contact layer deposited on said DBR, said contact layer and said DBR having the same conductivity type, disordered regions extending through said contact layer, said DBR, said active layer and at least partially through said first confinement layer, said disordered regions having a conductivity type opposite that of said contact layer and said DBR, at least one trough formed in said substrate exposing a surface of said first confinement layer, a high reflectivity coating deposited on said exposed surface of said first confinement layer in said trough in said substrate, at least one contact formed on said substrate, said at least one contact not formed in said trough, and optical cavities formed between said disordered regions, contacts formed on said contact layer, one of said contacts formed on said contact layer aligned with each of said optical cavities such that current injected between one of said contacts on said contact layer and said at least one contact on said substrate will cause light emission from one of said optical cavities through the exposed surface of said first confinement layer in said trough in said substrate.

Claim 35

The high density, surface emitting, semiconductor laser array of claim 30 wherein said substrate, said first confinement layer and said disordered regions have n-type conductivity and said DBR and said contact layer have p-type conductivity.

Claim 36

The high density, surface emitting, semiconductor laser array of claim 30 wherein said optical cavities comprises the nondisordered portions of the DBR, the nondisordered portions of the active layer and the nondisordered portions of the first confinement layer between adjacent said disordered regions.

Claim 37

The high density, surface emitting, semiconductor laser array of claim 30 wherein an electrically insulating region is formed on each of said disordered regions.

Claim 38

The high density, surface emitting, semiconductor laser array of claim 30 further comprising a refractive layer deposited on said high reflectivity coating, and said light emission from one of said optical cavities passes through the surface of said refractive layer in said trough in said substrate.

Claim 39

The high density, surface emitting, semiconductor laser array of claim 30 further comprising a second semiconductor confinement layer deposited on said first confinement layer which was deposited on said substrate, said active layer deposited on said second semiconductor confinement layer, a third semiconductor confinement layer deposited on said active layer, and said DBR deposited on said third semiconductor confinement layer, wherein said second and third confinement layers have bandgaps intermediate between the bandgaps of said active layer, and first confinement layer and said DBR.

Claim 40

The high density, surface emitting, semiconductor laser array of claim 30 further comprising fresnel lenses etched over said optical cavities on said exposed surface of said first confinement layer in said trough in said substrate.

Claim 41

The high density, surface emitting, semiconductor laser array of claim 30 further comprising a micro lens array positioned over said optical cavities on said exposed surface of said first confinement layer in said trough in said substrate.

Claim 42

the high density, surface emitting, semiconductor laser array of claim 30 wherein said optical cavities form a two-dimensional array.