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US5216262A
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Quantum well structures useful for semiconductor devices
Assignee: TWK TECHNOLOGIES Inc
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Filing: 1992-03-02
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Granted: 1993-06-01
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Expires: 2012-03-02
Abstract
Abstract A quantum well structure useful for semiconducting devices comprises two barrier regions and a thin epitaxially grown monocrystalline semiconductor material quantum well sandwiched between said barrier regions. Each barrier region consists essentially of alternate strain layers forming a superlattice, each of said layers being thinner than said quantum well. The layers are so thin that no defects are generated as a result of the release of stored strain energy.
Inventors
- 👤 Raphael Tsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 14:17
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; B; B82; B82Y; B82Y10/00; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8163
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
70 words
A quantum well structure useful for semiconducting devices, said structure comprising two barrier regions and a thin epitaxially grown monocrystalline semiconductor material quantum well sandwiched between said barrier regions, each barrier region consisting essentially of alternate strain layers forming a superlattice, each of said layers being thinner than said quantum well and being so thin that no defects are generated as a result of the release of stored strain energy.
Claim 2
Dependent Claim
70 words
A quantum well structure useful for semiconducting devices, said structure comprising two barrier regions and a thin epitaxially grown monocrystalline semiconductor material quantum well sandwiched between said barrier regions, each barrier region consisting essentially of alternate strain layers forming a superlattice, each of said layers being thinner than said quantum well and being so thin that no defects are generated as a result of the release of stored strain energy.
Claim 3
Dependent Claim
21 words
A quantum well structure according to claim 1, wherein each of said layers has a thickness of 2 to 4 monolayers.
Claim 4
Dependent Claim
26 words
A quantum well structure according to claim 1, wherein the alternate layers are SiO 2 and Si in the barrier and the quantum well is Si.
Claim 5
Dependent Claim
26 words
A quantum well structure according to claim 2, wherein the alternate layers are SiO 2 and Si in the barrier and the quantum well is Si.
Claim 6
Dependent Claim
18 words
A quantum well structure according to claim 1, wherein the structure is doped to form desired junction characteristics.
Claim 7
Dependent Claim
18 words
A quantum well structure according to claim 1, wherein the layers are one of III-V and II-VI types.
Claim 8
Dependent Claim
77 words
A quantum well structure useful for semiconducting devices, said structure comprising two barrier regions and a thin monocrystalline quantum well sandwiched between said barrier regions, the quantum well consisting essentially of alternate strain layers forming a superlattice, each of said layers being so thin that no defects are generated as a result of the release of stored strain energy, each barrier region being thinner than said quantum well and consisting of an epitaxially grown monocrystalline semiconductor material.
Claim 9
Dependent Claim
77 words
A quantum well structure useful for semiconducting devices, said structure comprising two barrier regions and a thin monocrystalline quantum well sandwiched between said barrier regions, the quantum well consisting essentially of alternate strain layers forming a superlattice, each of said layers being so thin that no defects are generated as a result of the release of stored strain energy, each barrier region being thinner than said quantum well and consisting of an epitaxially grown monocrystalline semiconductor material.
Claim 10
Dependent Claim
74 words
A quantum well structure useful for semiconducting devices, said structure comprising two barrier regions and a thin epitaxially grown monocrystalline Si quantum well sandwiched between said barrier regions, each barrier region consisting essentially of alternate strain layers of SiO 2 and Si forming a superlattice, each of said layers being thinner than said quantum well and being so thin that no defects are generated as a result of the release of stored strain energy.
Claim 11
Dependent Claim
74 words
A quantum well structure useful for semiconducting devices, said structure comprising two barrier regions and a thin epitaxially grown monocrystalline Si quantum well sandwiched between said barrier regions, each barrier region consisting essentially of alternate strain layers of SiO 2 and Si forming a superlattice, each of said layers being thinner than said quantum well and being so thin that no defects are generated as a result of the release of stored strain energy.
Claim 12
Dependent Claim
21 words
A quantum well structure according to claim 8, wherein each of said layers has a thickness of 2 to 4 monolayers.
Claim 13
Dependent Claim
18 words
A quantum well structure according to claim 8, wherein the structure is doped to form desired junction characteristics.
Claim 14
Dependent Claim
64 words
A metal oxide-semiconductor field effect transistor, comprising silicon having thereon a metal contact, the metal contact being separated from said silicon by an insulating layer, said insulating layer consisting essentially of alternate strain layers of SiO 2 and Si forming a superlattice, each of said layers being so thin that no defects are generated as a result of the release of stored strain energy.
Claim 15
Dependent Claim
64 words
A metal oxide-semiconductor field effect transistor, comprising silicon having thereon a metal contact, the metal contact being separated from said silicon by an insulating layer, said insulating layer consisting essentially of alternate strain layers of SiO 2 and Si forming a superlattice, each of said layers being so thin that no defects are generated as a result of the release of stored strain energy.
Claim 16
Dependent Claim
24 words
A metal oxide-semiconductor field effect transistor according to claim 11, wherein each of said strain layers has a thickness of 2 to 4 monolayers.
Claim 17
Dependent Claim
36 words
A metal oxide-semiconductor field effect transistor according to claim 11, additionally having a layer of amorphous SiO 2 interposed between said metal contact and said insulating layer of alternate strain layers of SiO 2 and Si.
Claim 18
Dependent Claim
24 words
A metal oxide-semiconductor field effect transistor according to claim 13, wherein each of said strain layers has a thickness of 2 to 4 monolayers.
Claim 19
Dependent Claim
40 words
A metal oxide-semiconductor field effect transistor according to claim 13, wherein the thickness of the layer of amorphous SiO 2 is approximately the same as the thickness of said insulating layer of alternate strain layers of SiO 2 and Si.
Claim 20
Dependent Claim
49 words
A barrier material for use in semiconductor devices including quantum well structures, said material, consisting essentially of alternate strain layers of SiO 2 and Si forming a superlattice, each of said layers being so thin that no defects are generated as a result of release of stored strain energy.
Claim 21
Dependent Claim
49 words
A barrier material for use in semiconductor devices including quantum well structures, said material, consisting essentially of alternate strain layers of SiO 2 and Si forming a superlattice, each of said layers being so thin that no defects are generated as a result of release of stored strain energy.
Claim 22
Dependent Claim
30 words
A barrier material for use in semiconductor devices including quantum well structures according to claim 16, wherein each of said strain layers has a thickness of 2 to 4 monolayers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-31 | 1996-11-30 | 1997-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-31 | 2000-11-30 | 2001-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-31 | 2004-11-30 | 2005-06-01 | $7700.00 | Window Closed / Lapsed |