US5214738A
Expired / Lapsed
US
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Positive coefficient thin-film thermistor
Assignee: Mitsui Toatsu Chemicals Inc
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Filing: 1990-05-10
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Granted: 1993-05-25
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Expires: 2010-05-10
Abstract
Abstract A positive coefficient thin-film thermistor which is a thin film exhibiting a positive temperature coefficient (PTC) characteristic and having a thickness of 0.005 to 5 μm and electrodes as constituting elements, and wherein the thin film is compound of a barium titanate based composition and the PTC characteristic is represented by a resistance variation in the transition of region of 1-10 orders of magnitude and a maximum resistance temperature variation rate of 1-20 orders/°C.
Inventors
- 👤 Shigeaki Nakajima
- 👤 Hiroshi Waki
- 👤 Nobuhiro Fukuda
- 👤 Hiroyuki Hyakutake
- 👤 Masanaga Kikuzawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:08
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/02; H01C7/022; H01C7/023; H01C7/025; H01C7/021
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
134 words
A positive coefficient thin-film thermistor exhibiting a positive coefficient characteristic, having a thickness of from 0.005 to 5 μm, and comprised of a thin film and an electrode, said thin film comprising a barium titanate composition which contains Ti, Ba, Sr, Si, Mn and at least one doping metal wherein, in a g-atm ratio to Ti, Ba is in the range of from 0.5 to 1, Sr is from 0 to 0.5, Ti/(Ba+Sr) is from 1.002 to 1.015, Si is from 0.0005 to 0.01, and Mn is from 0.000001 to 0.001, and wherein the at least one doping metal is selected from Y, La, Dy, Sb, Nb, Ta, Bi, Mo and V in a ratio of the total number of g-atms of said doping metal to one g-atm Ti ranging from 0.0005 to 0.01.
Claim 2
Dependent Claim
134 words
A positive coefficient thin-film thermistor exhibiting a positive coefficient characteristic, having a thickness of from 0.005 to 5 μm, and comprised of a thin film and an electrode, said thin film comprising a barium titanate composition which contains Ti, Ba, Sr, Si, Mn and at least one doping metal wherein, in a g-atm ratio to Ti, Ba is in the range of from 0.5 to 1, Sr is from 0 to 0.5, Ti/(Ba+Sr) is from 1.002 to 1.015, Si is from 0.0005 to 0.01, and Mn is from 0.000001 to 0.001, and wherein the at least one doping metal is selected from Y, La, Dy, Sb, Nb, Ta, Bi, Mo and V in a ratio of the total number of g-atms of said doping metal to one g-atm Ti ranging from 0.0005 to 0.01.
Claim 3
Dependent Claim
39 words
A positive coefficient thin-film thermistor of claim 1 wherein the thermistor has a resistance variation in transition region of from 1 to 10 orders of magnitude and a maximum resistance temperature variation rate of from 1 to 20 orders/°C.
Claim 4
Dependent Claim
26 words
A positive coefficient thin-film thermistor of claim 1 wherein the thin film is formed by a method selected from vacuum deposition, sputtering, ion-plating, electro-deposition and coating.
Claim 5
Dependent Claim
16 words
A position coefficient thin-film thermistor of claim 3 wherein the thin film is formed by coating.
Claim 6
Dependent Claim
20 words
A positive coefficient thin-film thermistor of claim 4 wherein an active hydrogen containing compound is added to the coating solution.
Claim 7
Dependent Claim
21 words
A positive coefficient thin-film thermistor of claim 4 wherein a compound having chelate forming performance is added to the coating solution.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-05-24 | 1996-11-23 | 1997-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-24 | 2000-11-23 | 2001-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-24 | 2004-11-23 | 2005-05-25 | $7700.00 | Window Closed / Lapsed |