Oxide superconducting lead for interconnecting device component with a semiconductor substrate via at least one buffer layer

Claim 2

An electronic device comprising: a substrate comprising a silicon containing material; at least one device component formed on or in said substrate; and a lead formed on or in said substrate, which comprises an oxide superconducting material and electrically contacts with said device component, wherein a buffer layer comprising a refractory material is interposed between said lead and said device component.

Claim 3

The electronic device of claim 1 wherein said refractory material is selected from the group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), chromium (Cr), and a silicon compound thereof.

Claim 4

The electronic device of claim 1 wherein said device component is an insulated gate FET.

Claim 5

The electronic device of claim 1 wherein said device component is a bipolar FET.

Claim 6

The electronic device of claim 1 wherein said device component is a SIT.

Claim 7

The electronic device of claim 1 wherein said oxide superconducting material comprises copper and oxygen.

Claim 8

An electronic device comprising: a substrate comprising a semiconductor material; at least one device component formed on or in said substrate; and a lead formed on or in said substrate, which comprises an oxide superconducting material and electrically contacts with said device component, wherein first and second buffer layers are interposed between said lead and device component, wherein said first layer is in an ohmic contact with said lead and said second layer blocks materials diffusing from said lead or first layer to said device component and wherein said second layer comprises a refractory material selected from the group consisting of silicon compound of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), and chromium (Cr).

Claim 9

An electronic device comprising: a substrate comprising a semiconductor material; at least one device component formed on or in said substrate; and a lead formed on or in said substrate, which comprises an oxide superconducting material and electrically contacts with said device component, wherein first and second buffer layers are interposed between said lead and device component, wherein said first layer is in an ohmic contact with said lead and said second layer blocks materials diffusing from said lead or first layer to said device component and wherein said second layer comprises a refractory material selected from the group consisting of silicon compound of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), and chromium (Cr).

Claim 10

The electronic device of claim 7 wherein said device component is an insulated gate FET.

Claim 11

The electronic device of claim 7 wherein said device component is a bipolar FET.

Claim 12

The electronic device of claim 7 wherein said device component is a SIT.

Claim 13

The electronic device of claim 7 wherein said oxide superconducting material comprises copper and oxygen.

Claim 14

A superconducting device comprising a substrate consisting of a material and having an electric connecting section and a copper oxide superconducting material thereon, and an electric interconnecting means for the electric connecting section and the superconducting material, the electric interconnecting means formed in a multilayer structure of one first member selected from the group of copper, gold, platinum and materials including copper, gold and platinum as a main component, the first member directly attached to the superconducting material, one second member made of a heat resistant material selected from the group of compounds of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), and chromium (Cr) with the substrate material and the second member directly attached to the first member and the substrate.

Claim 15

A superconducting device comprising a substrate consisting of a material and having an electric connecting section and a copper oxide superconducting material thereon, and an electric interconnecting means for the electric connecting section and the superconducting material, the electric interconnecting means formed in a multilayer structure of one first member selected from the group of copper, gold, platinum and materials including copper, gold and platinum as a main component, the first member directly attached to the superconducting material, one second member made of a heat resistant material selected from the group of compounds of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), and chromium (Cr) with the substrate material and the second member directly attached to the first member and the substrate.

Claim 16

The superconducting device of claim 12, wherein the oxide superconducting material is made from one member selected from the group of copper compounds which include elements in Groups IIa and IIIa of the Periodic Table.

Claim 17

A superconducting device comprising a semiconductor substrate having a plurality of semiconductor elements with an electrode section provided thereon and input and output terminals for an external electric signal and the electrode section of the semiconductor elements, and electric connecting means between the electrode and the input and output terminals made of the semiconductor elements, and electric connecting means between the electrode and the input and output terminals made of an oxide superconducting material, wherein the electrode section is comprised of one member selected from the group of compounds of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), and chromium (Cr) with the substrate material and directly connected to the semiconductor, and a material selected from one group of copper, gold, platinum, and materials including copper, gold, platinum as a main component and directly connected to the one member, and the oxide superconducting material directly attached to the material.

Claim 18

A superconducting device comprising a semiconductor substrate having a plurality of semiconductor elements with an electrode section provided thereon and input and output terminals for an external electric signal and the electrode section of the semiconductor elements, and electric connecting means between the electrode and the input and output terminals made of the semiconductor elements, and electric connecting means between the electrode and the input and output terminals made of an oxide superconducting material, wherein the electrode section is comprised of one member selected from the group of compounds of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), and chromium (Cr) with the substrate material and directly connected to the semiconductor, and a material selected from one group of copper, gold, platinum, and materials including copper, gold, platinum as a main component and directly connected to the one member, and the oxide superconducting material directly attached to the material.

Claim 19

A superconducting device as in claim 12, where said substrate material comprises silicon.

Claim 20

A superconducting device as in claim 14, where said substrate material comprises silicon.

Claim 21

An electronic device comprising: a semiconductor substrate having a semiconductor device associated therewith; and an oxide superconducting lead formed with respect to said substrate, said lead connected to a semiconductor material of said semiconductor device through a buffer layer. wherein said buffer layer includes a first layer in contact with said superconducting lead, said first layer comprising a material which is capable of making an ohmic contact with said superconducting lead without being oxidized by said oxide superconducting lead, and a second layer in contact with said semiconductor material, said second layer comprising a metal compound which is capable of preventing the material of said first layer from diffusing into said semiconductor material.

Claim 22

An electronic device comprising: a semiconductor substrate having a semiconductor device associated therewith; and an oxide superconducting lead formed with respect to said substrate, said lead connected to a semiconductor material of said semiconductor device through a buffer layer. wherein said buffer layer includes a first layer in contact with said superconducting lead, said first layer comprising a material which is capable of making an ohmic contact with said superconducting lead without being oxidized by said oxide superconducting lead, and a second layer in contact with said semiconductor material, said second layer comprising a metal compound which is capable of preventing the material of said first layer from diffusing into said semiconductor material.

Claim 23

A superconducting device comprising a substrate consisting of a material and having an electric connecting section and a copper oxide superconducting material thereon, and an electric interconnecting means for the electric connecting section and the superconducting material, the electric interconnecting means formed by one member made of a heat resistant material selected from the group of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), chromium (Cr), and compounds thereof with the substrate material and the electric interconnecting means directly attached to the superconducting material and the substrate.

Claim 24

A superconducting device comprising a substrate consisting of a material and having an electric connecting section and a copper oxide superconducting material thereon, and an electric interconnecting means for the electric connecting section and the superconducting material, the electric interconnecting means formed by one member made of a heat resistant material selected from the group of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), chromium (Cr), and compounds thereof with the substrate material and the electric interconnecting means directly attached to the superconducting material and the substrate.