Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
105 words
A method for microelectronic device encapsulation comprising the steps of: providing a microelectronic device including interconnection contacts disposed on the microelectronic device; depositing a passivation layer over the microelectronic device and the interconnection contacts; providing alternating current coupled electrodes positioned on the passivation layer and over the interconnection contacts; providing a base substrate including pressure contact electrodes and vias; and bonding the base substrate to the microelectronic device with a bonding agent for providing a mechanical bond between the microelectronic device and the base, and for providing electrical coupling between the pressure contact electrodes and the alternating current coupled electrodes positioned on the passivation layer.
Claim 2
Independent Claim
105 words
A method for microelectronic device encapsulation comprising the steps of: providing a microelectronic device including interconnection contacts disposed on the microelectronic device; depositing a passivation layer over the microelectronic device and the interconnection contacts; providing alternating current coupled electrodes positioned on the passivation layer and over the interconnection contacts; providing a base substrate including pressure contact electrodes and vias; and bonding the base substrate to the microelectronic device with a bonding agent for providing a mechanical bond between the microelectronic device and the base, and for providing electrical coupling between the pressure contact electrodes and the alternating current coupled electrodes positioned on the passivation layer.
Claim 3
Dependent Claim
31 words
A method for encapsulation of a microelectronic device as claimed in claim 1, wherein said step of providing a microelectronic device includes the step of providing a surface acoustic wave device.
Claim 4
Dependent Claim
27 words
A method for microelectronic device encapsulation as claimed in claim 1, wherein said step of providing a microelectronic device includes the step of providing a semiconductor device.
Claim 5
Dependent Claim
61 words
A method for microelectric device encapsulation as claimed in claim 2, wherein said step of depositing a passivation layer over the surface acoustic wave device and the interconnection contacts includes the step of depositing a temperature compensation layer having a particular temperature coefficient of delay of magnitude similar to, and opposite in sign from, that of the surface acoustic wave device.
Claim 6
Dependent Claim
36 words
A method for microelectronic device encapsulation as claimed in claim 2, wherein said step of providing a surface acoustic wave device includes the step of depositing a piezoelectric thin-film overlay on the surface acoustic wave device.
Claim 7
Dependent Claim
43 words
A method for microelectronic device encapsulation as claimed in claim 2, wherein said step of depositing a passivation layer over the surface acoustic wave device and the interconnection contacts includes the step of plasma-enhanced chemical vapor depositing a layer of hydrogenated silicon nitride.
Claim 8
Dependent Claim
41 words
A method for microelectronic device encapsulation as claimed in claim 3, wherein said step of depositing a passivation layer over the semiconductor device and the interconnection contacts includes the step of plasma-enhanced chemical vapor depositing a layer of hydrogenated silicon nitride.
Claim 9
Dependent Claim
49 words
A method for microelectronic device encapsulation as claimed in claim 2, wherein said step of providing a base substrate includes the step of providing a base substrate which has a thermal coefficient of expansion which is matched to a thermal coefficient of expansion of the surface acoustic wave device.
Claim 10
Dependent Claim
47 words
A method for microelectronic device encapsulation as claimed in claim 3, wherein said step of providing a base substrate includes the step of providing a base substrate which has a thermal coefficient of expansion which is matched to a thermal coefficient of expansion of the semiconductor device.
Claim 11
Independent Claim
158 words
A method for encapsulation of a plurality of microelectronic devices comprising the steps of: providing a plurality of microelectronic devices on a first common substrate, including interconnection contacts disposed on the microelectronic devices; depositing a passivation layer over the first common substrate including the plurality of microelectronic devices and the interconnection contacts; providing alternating current coupled electrodes positioned on the passivation layer and over the interconnection contacts; providing a plurality of base substrates including a plurality of pressure contact electrodes and vias, joined into a second common substrate; bonding the second common substrate to the first common substrate with a bonding agent for providing for a mechanical bond between the plurality of microelectronic devices and the plurality of base substrates, and for providing for electrical coupling between the pressure contact electrodes and the alternating current coupled electrodes positioned on the passivation layer; and separating the first and second common substrates into a plurality of individual packaged microelectronic devices.
Claim 12
Independent Claim
158 words
A method for encapsulation of a plurality of microelectronic devices comprising the steps of: providing a plurality of microelectronic devices on a first common substrate, including interconnection contacts disposed on the microelectronic devices; depositing a passivation layer over the first common substrate including the plurality of microelectronic devices and the interconnection contacts; providing alternating current coupled electrodes positioned on the passivation layer and over the interconnection contacts; providing a plurality of base substrates including a plurality of pressure contact electrodes and vias, joined into a second common substrate; bonding the second common substrate to the first common substrate with a bonding agent for providing for a mechanical bond between the plurality of microelectronic devices and the plurality of base substrates, and for providing for electrical coupling between the pressure contact electrodes and the alternating current coupled electrodes positioned on the passivation layer; and separating the first and second common substrates into a plurality of individual packaged microelectronic devices.
Claim 13
Dependent Claim
47 words
The method for encapsulation of a plurality of microelectronic devices as claimed in claim 10, wherein the step of providing the plurality of microelectronic devices on a first common substrate includes the step of providing a plurality of surface acoustic wave devices on a first common substrate.
Claim 14
Dependent Claim
37 words
The method for encapsulation of a plurality of microelectronic devices as claimed in claim 10, wherein the step of separating the first and second common substrates includes the step of sawing the first and second common substrates.
Claim 15
Dependent Claim
37 words
The method for encapsulation of a plurality of microelectronic devices as claimed in claim 10, wherein the step of separating the first and second common substrates includes the step of cutting the first and second common substrates.
Claim 16
Dependent Claim
44 words
The method for encapsulation of a plurality of microelectronic devices as claimed in claim 10, wherein the step of cutting the first and second common substrates includes the step of cutting the first and second common substrates with a light beam from a laser.
Claim 17
Dependent Claim
45 words
The method for encapsulation of a plurality of microelectronic devices as claimed in claim 10, wherein the step of providing a plurality of microelectronic devices on a first common substrate includes the step of providing a plurality of semiconductor devices on a first common substrate.