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US5208776A Expired / Lapsed US ⏱️ 0.0 years remaining

Pulse generation circuit

Assignee: Texas Instruments Inc
•
Filing: 1990-07-31
•
Granted: 1993-05-04
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Expires: 2010-07-31
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Abstract

Abstract A pulse generation circuit is disclosed. The pulse generation circuit has a serially connected chain of delay elements, the first delay element for receiving an input pulse. It has a plurality of logic gates with each logic gate having one input coupled to the output of one delay element in the chain. The other input is coupled to the output of the next delay element in the chain. When the input pulse is received, the outputs of the logic gates form a plurality of non-overlapping pulses. Such a circuit is useful in a semiconductor memory device as a phase delay circuit.

Inventors

  • 👤 Takumi Nasu
  • 👤 Hugh P. McAdams

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 23:03
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/70; G11C29/78; G11C29/83; G06; G06F; G06F11/00; G06F11/22; G06F11/2273; G11C29/04; G11C29/50

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 78 words
A pulse generation circuit comprising: a serially connected chain of delay elements, the first delay element for receiving an input pulse; and a plurality of logic gates, each logic gate having one input coupled to an output of a delay element in the chain another input coupled to the output of the next delay element in the chain such that when the input pulse is received, the outputs of the logic gates form a plurality of non-overlapping pulses.
Claim 2
Dependent Claim 78 words
A pulse generation circuit comprising: a serially connected chain of delay elements, the first delay element for receiving an input pulse; and a plurality of logic gates, each logic gate having one input coupled to an output of a delay element in the chain another input coupled to the output of the next delay element in the chain such that when the input pulse is received, the outputs of the logic gates form a plurality of non-overlapping pulses.
Claim 3
Dependent Claim 13 words
The pulse generation circuit of claim 1 wherein the delay elements are inverters.
Claim 4
Dependent Claim 15 words
The pulse generation circuit of claim 2 wherein the logic gates are NAND logic gates.
Claim 5
Dependent Claim 18 words
The pulse generation circuit of claim 1 further comprising: capacitors connected to the outputs of the delay elements.
Claim 6
Dependent Claim 62 words
A dynamic memory device integrated onto a single semiconductor substrate comprising: an array of memory cells; support circuitry to read information from the memory cells and write information to the memory cells; redundant memory cells to replace defective memory cells; redundant circuits to access the redundant memory cells; circuitry to activate various of the redundant circuits at different times during power up.
Claim 7
Dependent Claim 62 words
A dynamic memory device integrated onto a single semiconductor substrate comprising: an array of memory cells; support circuitry to read information from the memory cells and write information to the memory cells; redundant memory cells to replace defective memory cells; redundant circuits to access the redundant memory cells; circuitry to activate various of the redundant circuits at different times during power up.
Claim 8
Dependent Claim 81 words
The dynamic memory device of claim 5 wherein the circuitry to activate comprises: a serially connected chain of delay elements, the first delay element for receiving a power up reset pulse; a plurality of logic gates, each logic gate having one input coupled to an output of a delay element in the chain, another input coupled to a output of the following delay element in the chain, the outputs of the logic gates forming a series of phase delayed reset pulses.
Claim 9
Dependent Claim 14 words
The dynamic memory device of claim 6 wherein the delay elements are CMOS inverters.
Claim 10
Dependent Claim 15 words
The dynamic memory device of claim 7 wherein the logic gates are NAND logic gates.

References Cited (Backward Citations)

US4802127A Cited
US4985865A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-05-03 1996-11-02 1997-05-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-05-03 2000-11-02 2001-05-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-05-03 2004-11-02 2005-05-04 $7700.00 Window Closed / Lapsed

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