Patent US5208172A successfully refreshed from Google Patents.
US5208172A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a raised vertical transistor
Assignee: NXP USA Inc
•
Filing: 1992-03-02
•
Granted: 1993-05-04
•
Expires: 2012-03-02
Abstract
Abstract A vertical transistor (10) has a substrate (12) and a control electrode conductive layer (18), which functions as a control or gate electrode. A sidewall dielectric layer (22) is formed laterally adjacent the control electrode conductive layer (18) and overlying the substrate (12). The conductive layer (18) at least partially surrounds a channel region (30). A vertical conductive region is formed within a device opening wherein a bottom portion of the conductive region is a first current electrode (28). A middle portion of the vertical conductive region is the channel region (30). A top portion of the vertical conductive region is a second current electrode (34).
Inventors
- 👤 Jon T. Fitch
- 👤 Mazure Carlos A.
- 👤 Keith E. Witek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:28
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10B12/053; H10B12/30; H10B12/31; H10B12/34; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/025; H10D30/60; H10D30/601; H10D30/608; H10D30/63; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/016; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
234 words
A method for forming a transistor comprising the steps of: providing a substrate having a surface and being of a first conductivity type; forming a first dielectric layer overlying the substrate; forming a control electrode conductive layer overlying the first dielectric layer; forming a second dielectric layer overlying the control electrode conductive layer; sequentially removing portions of each of the second dielectric layer, the control electrode conductive layer, and the first dielectric layer, the sequential removing forming an opening which exposes the surface of the substrate and forming a sidewall of the control electrode conductive layer; growing a sidewall dielectric from the sidewall of the control electrode conductive layer to form a control electrode dielectric, the sidewall dielectric being laterally adjacent the sidewall of the control electrode conductive layer; and forming a conductive region within the opening, the conductive region having a first portion of a second conductivity type which functions as a first current electrode, the first portion being laterally adjacent the first dielectric layer and overlying the substrate, the conductive region having a second portion of the first conductivity type functioning as a channel region, the second portion being adjacent the sidewall dielectric, and overlying the first current electrode, and the conductive region having a third portion of the second conductivity type functioning as a second current electrode, the third portion being adjacent the second dielectric layer and overlying the channel region.
Claim 2
Independent Claim
234 words
A method for forming a transistor comprising the steps of: providing a substrate having a surface and being of a first conductivity type; forming a first dielectric layer overlying the substrate; forming a control electrode conductive layer overlying the first dielectric layer; forming a second dielectric layer overlying the control electrode conductive layer; sequentially removing portions of each of the second dielectric layer, the control electrode conductive layer, and the first dielectric layer, the sequential removing forming an opening which exposes the surface of the substrate and forming a sidewall of the control electrode conductive layer; growing a sidewall dielectric from the sidewall of the control electrode conductive layer to form a control electrode dielectric, the sidewall dielectric being laterally adjacent the sidewall of the control electrode conductive layer; and forming a conductive region within the opening, the conductive region having a first portion of a second conductivity type which functions as a first current electrode, the first portion being laterally adjacent the first dielectric layer and overlying the substrate, the conductive region having a second portion of the first conductivity type functioning as a channel region, the second portion being adjacent the sidewall dielectric, and overlying the first current electrode, and the conductive region having a third portion of the second conductivity type functioning as a second current electrode, the third portion being adjacent the second dielectric layer and overlying the channel region.
Claim 3
Dependent Claim
34 words
The method of claim 1 wherein the step of forming the conductive region further comprises the step of forming the first current electrode, the channel region, and the second current electrode as epitaxial regions.
Claim 4
Dependent Claim
46 words
The method of claim 2 wherein the step of forming the conductive region further comprises the step of using in-situ doping to dope the first current electrode, the channel region, and the second current electrode with dopant atoms to obtain said first and second conductivity types.
Claim 5
Dependent Claim
38 words
The method of claim 2 wherein the step of forming the conductive region further comprises the steps of providing the substrate as a polysilicon material and epitaxially growing polysilicon from the polysilicon substrate to form the epitaxial regions.
Claim 6
Dependent Claim
79 words
The method of claim 1 wherein the step of forming the sidewall dielectric further comprises the steps of: forming a second dielectric layer both adjacent the sidewall of the control electrode conductive layer and overlying the surface of the substrate exposed by the opening; forming a dielectric spacer adjacent the second dielectric layer, the dielectric spacer forming an inner opening; removing a portion of the second dielectric layer that lies within the inner opening; and removing the dielectric spacer.
Claim 7
Dependent Claim
43 words
The method of claim 1 wherein the step of forming the sidewall dielectric further comprises the steps of: etching the sidewall of the control electrode conductive layer to laterally recess the sidewall of the control electrode conductive layer before forming the sidewall dielectric.
Claim 8
Dependent Claim
161 words
The method of claim 1 wherein the step of removing portions further comprises the steps of: forming a masking layer overlying the second dielectric layer, the masking layer having a mask opening; etching a portion of the second dielectric layer exposed by the mask opening, the etching forming a first portion of the opening in the second dielectric layer which is self-aligned to the mask opening and exposing a portion of the control electrode conductive layer; etching the exposed portion of the control electrode conductive layer, the etching forming a second portion of the opening in the control electrode conductive layer which is self-aligned to the first portion of the opening and exposing a portion of the first dielectric layer; and etching the exposed portion of the first dielectric layer, the etching forming a third portion of the opening in the first dielectric layer which is self-aligned to the second portion of the opening and exposes the surface of the substrate.
Claim 9
Dependent Claim
38 words
The method of claim 1 further comprising a step of forming a diffusion region of the second conductivity type within the substrate and exposed at the surface of the substrate, the diffusion region being self-aligned to said opening.
Claim 10
Dependent Claim
53 words
The method of claim 1 further comprising the steps of: forming a diffusion region of the second conductivity type in the substrate and being exposed at the surface of the substrate, the diffusion region being formed prior to the step of forming the control electrode conductive layer, said opening overlying the diffusion region.
Claim 11
Dependent Claim
41 words
The method of claim 1 wherein the first current electrode region has a heavily doped first sub-region underlying a lightly doped second sub-region and the second current electrode region has a lightly doped first sub-region underlying a heavily doped second sub-region.
Claim 12
Dependent Claim
49 words
The method of claim 1 wherein the step of forming a conductive region further comprises forming one of the first current electrode region or the second current electrode region as a heavily doped sub-region adjacent a lightly doped sub-region, wherein the lightly doped sub-region is adjacent the channel region.
Claim 13
Dependent Claim
21 words
The method of claim 1 wherein the control electrode conductive layer laterally surrounds a portion of a perimeter of the opening.
Claim 14
Dependent Claim
86 words
The method of claim 1 further comprising the steps of: forming a plurality of transistors overlying the substrate, each transistor being formed in accordance with claim 1 and having first and second current electrodes; forming a conductive connection layer that electrically connects each second current electrode of the plurality of transistors with each other; and forming a diffusion connection region of the second conductivity type within the substrate, the diffusion connection region electrically connecting each first current electrode of the plurality of transistors to each other.
Claim 15
Independent Claim
249 words
A method for forming a transistor comprising the steps of: providing a silicon substrate having a surface and being of a first conductivity type; forming a first dielectric layer overlying the silicon substrate; depositing a control electrode polysilicon layer overlying the first dielectric layer; depositing a second dielectric layer overlying the control electrode polysilicon layer; sequentially removing portions of each of the second dielectric layer, the control electrode polysilicon layer, and the first dielectric layer, the sequential removing forming an opening which exposes the surface of the silicon substrate and forming a sidewall of the control electrode polysilicon layer; etching the sidewall of the control electrode polysilicon layer to laterally recess the sidewall of the control electrode polysilicon layer; growing a sidewall oxide laterally adjacent the sidewall of the control electrode polysilicon layer, the sidewall oxide functioning as a gate dielectric; and growing an epitaxial region within the opening, the epitaxial region having a first portion of a second conductivity type which functions as a first current electrode, the first portion being laterally adjacent the first dielectric layer and overlying the silicon substrate, the epitaxial region having a second portion of the first conductivity type functioning as a channel region, the second portion being laterally adjacent the sidewall oxide, and overlying the first current electrode, and the epitaxial region having a third portion of the second conductivity type functioning as a second current electrode, the third portion being laterally adjacent the second dielectric layer and overlying the channel region.
Claim 16
Independent Claim
249 words
A method for forming a transistor comprising the steps of: providing a silicon substrate having a surface and being of a first conductivity type; forming a first dielectric layer overlying the silicon substrate; depositing a control electrode polysilicon layer overlying the first dielectric layer; depositing a second dielectric layer overlying the control electrode polysilicon layer; sequentially removing portions of each of the second dielectric layer, the control electrode polysilicon layer, and the first dielectric layer, the sequential removing forming an opening which exposes the surface of the silicon substrate and forming a sidewall of the control electrode polysilicon layer; etching the sidewall of the control electrode polysilicon layer to laterally recess the sidewall of the control electrode polysilicon layer; growing a sidewall oxide laterally adjacent the sidewall of the control electrode polysilicon layer, the sidewall oxide functioning as a gate dielectric; and growing an epitaxial region within the opening, the epitaxial region having a first portion of a second conductivity type which functions as a first current electrode, the first portion being laterally adjacent the first dielectric layer and overlying the silicon substrate, the epitaxial region having a second portion of the first conductivity type functioning as a channel region, the second portion being laterally adjacent the sidewall oxide, and overlying the first current electrode, and the epitaxial region having a third portion of the second conductivity type functioning as a second current electrode, the third portion being laterally adjacent the second dielectric layer and overlying the channel region.
Claim 17
Dependent Claim
46 words
The method of claim 14 wherein the step of growing the epitaxial region further comprises a step of: using in-situ doping to dope the first current electrode, the channel region, and the second current electrode with dopant atoms to obtain said first and second conductivity types.
Claim 18
Dependent Claim
30 words
The method of claim 14 further comprising a step of forming a diffusion region of the second conductivity type within the substrate and exposed at the surface of the substrate.
Claim 19
Dependent Claim
45 words
The method of claim 14 wherein the first current electrode region is formed having a heavily doped first sub-region underlying a lightly doped second sub-region and the second current electrode region is formed having a lightly doped first sub-region underlying a heavily doped second sub-region.
Claim 20
Dependent Claim
48 words
The method of claim 14 wherein the step of forming the epitaxial region further comprises forming one of the first current electrode region or the second current electrode region as heavily doped sub-region adjacent a lightly doped sub-region, wherein the lightly doped sub-region is adjacent the channel region.
Claim 21
Dependent Claim
21 words
The method of claim 14 wherein the control electrode polysilicon layer laterally surrounds a portion of a perimeter of the opening.
Claim 22
Independent Claim
242 words
A method for forming a vertical field effect transistor comprising the steps of: providing a substrate having a surface and being of a first conductivity type; forming a first dielectric layer overlying the substrate; forming a control electrode conductive layer overlying the first dielectric layer; forming a second dielectric layer overlying the control electrode conductive layer; removing portions of each of the first dielectric layer, the control electrode conductive layer, and the second dielectric layer to form both an opening which exposes the surface of the substrate and a sidewall of the control electrode conductive layer; laterally recessing the sidewall of the control electrode conductive layer; growing a sidewall dielectric laterally adjacent the sidewall of the control electrode conductive layer; growing a first conductive region within the opening, the first conductive region being of a second conductivity type and functioning as a first current electrode, the first conductive region being laterally adjacent the first dielectric layer and overlying the substrate; growing a second conductive region within the opening, the second conductive region being of the first conductivity type and functioning as a channel region, the second conductive region being laterally adjacent the sidewall dielectric and overlying the first current electrode; and growing a third conductive region within the opening, the third conductive region being of the second conductivity type and functioning as a second current electrode, the third conductive region being laterally adjacent the second dielectric layer and overlying the channel region.
Claim 23
Independent Claim
242 words
A method for forming a vertical field effect transistor comprising the steps of: providing a substrate having a surface and being of a first conductivity type; forming a first dielectric layer overlying the substrate; forming a control electrode conductive layer overlying the first dielectric layer; forming a second dielectric layer overlying the control electrode conductive layer; removing portions of each of the first dielectric layer, the control electrode conductive layer, and the second dielectric layer to form both an opening which exposes the surface of the substrate and a sidewall of the control electrode conductive layer; laterally recessing the sidewall of the control electrode conductive layer; growing a sidewall dielectric laterally adjacent the sidewall of the control electrode conductive layer; growing a first conductive region within the opening, the first conductive region being of a second conductivity type and functioning as a first current electrode, the first conductive region being laterally adjacent the first dielectric layer and overlying the substrate; growing a second conductive region within the opening, the second conductive region being of the first conductivity type and functioning as a channel region, the second conductive region being laterally adjacent the sidewall dielectric and overlying the first current electrode; and growing a third conductive region within the opening, the third conductive region being of the second conductivity type and functioning as a second current electrode, the third conductive region being laterally adjacent the second dielectric layer and overlying the channel region.
Claim 24
Dependent Claim
30 words
The method of claim 20 further comprising a step of forming a diffusion region of the second conductivity type within the substrate and exposed at the surface of the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-03 | 1996-11-02 | 1997-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-03 | 2000-11-02 | 2001-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-03 | 2004-11-02 | 2005-05-04 | $7700.00 | Window Closed / Lapsed |