Patent US5202281A successfully refreshed from Google Patents.
US5202281A
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US
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Method of manufacturing silicon semiconductor acceleration sensor devices
Assignee: Mitsubishi Electric Corp
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Filing: 1991-09-20
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Granted: 1993-04-13
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Expires: 2011-09-20
Abstract
Abstract A method of manufacturing a semiconductor acceleration includes oxidizing a silicon wafer, removing the oxide film and underlying silicon in a U-shaped pattern at a front surface of the wafer by etching to form a portion that is to become a cantilever, depositing a thin metal film covering the U-shaped pattern that is to become the cantilever, etching a recessed portion in the rear surface of the silicon wafer encompassing the U-shaped pattern, thereby forming the cantilever, dicing the silicon wafer into chips, and removing at least part of the thin metal film, thereby releasing the cantilever.
Inventors
- 👤 Kiyoshi Ishibashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 15:47
CPC Classifications
G; G01; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/12; G01P15/0802; G01P15/123; G01P2015/0805; G01P2015/0822; G01P2015/0825; G01P2015/0828
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
108 words
A method of manufacturing a semiconductor acceleration sensor comprising: oxidizing a silicon wafer to form an oxide film; removing the oxide film and underlying silicon in a U-shaped pattern at a front surface of the wafer by etching to form a portion that is to become a cantilever; depositing a thin metal film covering the U-shaped pattern that is to become the cantilever; etching a recessed portion in the rear surface of the silicon wafer encompassing the U-shaped pattern, thereby forming the cantilever; dicing the silicon wafer into chips; and removing at least part of the thin metal film by mechanically deflecting the cantilever, thereby releasing the cantilever.
Claim 2
Independent Claim
108 words
A method of manufacturing a semiconductor acceleration sensor comprising: oxidizing a silicon wafer to form an oxide film; removing the oxide film and underlying silicon in a U-shaped pattern at a front surface of the wafer by etching to form a portion that is to become a cantilever; depositing a thin metal film covering the U-shaped pattern that is to become the cantilever; etching a recessed portion in the rear surface of the silicon wafer encompassing the U-shaped pattern, thereby forming the cantilever; dicing the silicon wafer into chips; and removing at least part of the thin metal film by mechanically deflecting the cantilever, thereby releasing the cantilever.
Claim 3
Dependent Claim
21 words
A method of manufacturing a semiconductor acceleration sensor according to claim 1 wherein the thin metal film comprises an aluminum film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-12 | 1996-10-12 | 1997-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-12 | 2000-10-12 | 2001-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-12 | 2004-10-12 | 2005-04-13 | $7700.00 | Window Closed / Lapsed |