Method for removing photoresist and other adherent materials from substrates

Claim 1

A method for removing an adherent matrix which is a cross-linked photoresist which has been hardened by baking, ion implantation, ultraviolet radiation, or exposure to a plasma from a substrate surface, said method comprising: exposing the adherent matrix to a non-oxidizing vapor phase solvent for at least 30 seconds under temperature and pressure conditions selected to allow penetration of the vapor phase solvent into the matrix while the matrix remains substantially intact, wherein said solvent has a vapor pressure of at least one atmosphere at room temperature; condensing the vapor phase solvent after the matrix has been penetrated but while the matrix remains intact to produce a liquid phase within the adherent matrix, whereby the matrix is structurally disrupted without substantial oxidation to produce non-adherent fragments; and removing the fragments from the substrate surface.

Claim 2

A method for removing an adherent matrix which is a cross-linked photoresist which has been hardened by baking, ion implantation, ultraviolet radiation, or exposure to a plasma from a substrate surface, said method comprising: exposing the adherent matrix to a non-oxidizing vapor phase solvent for at least 30 seconds under temperature and pressure conditions selected to allow penetration of the vapor phase solvent into the matrix while the matrix remains substantially intact, wherein said solvent has a vapor pressure of at least one atmosphere at room temperature; condensing the vapor phase solvent after the matrix has been penetrated but while the matrix remains intact to produce a liquid phase within the adherent matrix, whereby the matrix is structurally disrupted without substantial oxidation to produce non-adherent fragments; and removing the fragments from the substrate surface.

Claim 12

A method for removing an adherent matrix which is a cross-linked photoresist which has been hardened by baking, ion implantation, ultraviolet radiation, or exposure to a plasma from a surface of a substrate, said method comprising: placing the substrate within a chamber; maintaining a preselected temperature within the chamber; delivering to the chamber a non-oxidizing solvent vapor at a temperature above the chamber temperature and at a pressure below the saturation vapor pressure at the chamber temperature, wherein said solvent has a vapor pressure of at least three atmospheres at room temperature; increasing the pressure of the solvent vapor within the chamber from an initial value below the saturation vapor pressure to a subsequent value above the saturation vapor pressure, whereby the solvent initially penetrates the matrix while in the vapor phase and thereafter condenses to physically disrupt the matrix to produce fragments; and removing the fragments from the substrate surface.

Claim 13

A method for removing an adherent matrix which is a cross-linked photoresist which has been hardened by baking, ion implantation, ultraviolet radiation, or exposure to a plasma from a surface of a substrate, said method comprising: placing the substrate within a chamber; maintaining a preselected temperature within the chamber; delivering to the chamber a non-oxidizing solvent vapor at a temperature above the chamber temperature and at a pressure below the saturation vapor pressure at the chamber temperature, wherein said solvent has a vapor pressure of at least three atmospheres at room temperature; increasing the pressure of the solvent vapor within the chamber from an initial value below the saturation vapor pressure to a subsequent value above the saturation vapor pressure, whereby the solvent initially penetrates the matrix while in the vapor phase and thereafter condenses to physically disrupt the matrix to produce fragments; and removing the fragments from the substrate surface.

Claim 28

A method for removing "an adherent matrix which is a cross-linked photoresist which has been hardened by baking, ion implantation, ultraviolet radiation, or exposure to a plasma" from the surface of a semiconductor wafer, said method comprising: placing the wafer within a chamber; maintaining a preselected temperature within the chamber; connecting the chamber to a source of solvent consisting essentially of ammonia which has been heated to a temperature above the preselected chamber temperature, whereby the saturation vapor pressure of the ammonia at the source is sufficient to cause ammonia vapor to flow into the chamber; allowing the source and the chamber to reach equilibrium pressure, whereby ammonia vapor which has penetrated the cross-linked organic polymer condenses at the lower chamber temperature to physically disrupt the polymer and produce fragments; and removing the fragments from the water surface.

Claim 29

A method for removing "an adherent matrix which is a cross-linked photoresist which has been hardened by baking, ion implantation, ultraviolet radiation, or exposure to a plasma" from the surface of a semiconductor wafer, said method comprising: placing the wafer within a chamber; maintaining a preselected temperature within the chamber; connecting the chamber to a source of solvent consisting essentially of ammonia which has been heated to a temperature above the preselected chamber temperature, whereby the saturation vapor pressure of the ammonia at the source is sufficient to cause ammonia vapor to flow into the chamber; allowing the source and the chamber to reach equilibrium pressure, whereby ammonia vapor which has penetrated the cross-linked organic polymer condenses at the lower chamber temperature to physically disrupt the polymer and produce fragments; and removing the fragments from the water surface.