Patent US5200972A successfully refreshed from Google Patents.
US5200972A
Expired / Lapsed
US
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ND laser with co-doped ion(s) pumped by visible laser diodes
Assignee: United States Department of the Navy
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Filing: 1991-06-17
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Granted: 1993-04-06
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Expires: 2011-06-17
Abstract
Abstract The 1.06μ Nd transition in a co-doped Cr,Nd:Gd 3 Sc 2 Ga 3 sub.12 (Cr,Nd:GSGG) gain element is obtained by diode pumping Cr 3+ at 670 nm and produces efficient, low threshold laser operation. Although co-doped Cr,Nd:GSGG was developed for more efficient flashlamp pumping, it has the desirable property of having an extraordinarily broad absorption to allow for efficient diode pumping relative to the Nd:YAG laser. The consequent broad bandwidth tolerance of the Cr,Nd:GSGG for the diode pumping radiation allows diode pumping of the 1.06μ transition without regard to the wavelength of the visible diodes which has the potential for reducing the cost of the semiconductor pump and also demonstrates the extended versatility of these diodes which previously had been restricted to pump the Cr 3+ tunable vibronic lasers. CW and long pulse diode pumping provided pump power levels as high as 300 mW cw and 1 W pulsed. The lowest threshold power was measured at 938 μW and the highest output power was obtained at 43 mW cw and 173 mW pulsed. The best slope efficiency obtained was 42.1%, 78% of the theoretical maximum. Loss measurements indicate a value of 0.4%/cm.
Inventors
- 👤 Richard Scheps
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 10:06
CPC Classifications
H; H01; H01S; H01S3/00; H01S3/14; H01S3/16; H01S3/09; H01S3/091; H01S3/094; H01S3/0941; H01S3/09415; H01S2303/00; H01S3/0947; H01S3/1601; H01S3/1603; H01S3/1611; H01S3/162; H01S3/1623; H01S3/23; H01S3/2375; H01S3/2383; H01S3/2391
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
83 words
A laser apparatus for producing a 1.06 μ Nd transition therein comprising: a co-doped Cr,Nd:GSGG laser material and an output coupler forming a resonator; and at least one laser diode pumping Cr 3+ of said co-doped Cr,Nd:GSGG laser material between 610 and 680 nm to effect said 1.06 μ Nd transition in said Cr,Nd:GSGG, in which said pumping is at levels up to 300 mW cw with lowest threshold power measured at least 938 μW and highest output power of 43 mW cw.
Claim 2
Dependent Claim
83 words
A laser apparatus for producing a 1.06 μ Nd transition therein comprising: a co-doped Cr,Nd:GSGG laser material and an output coupler forming a resonator; and at least one laser diode pumping Cr 3+ of said co-doped Cr,Nd:GSGG laser material between 610 and 680 nm to effect said 1.06 μ Nd transition in said Cr,Nd:GSGG, in which said pumping is at levels up to 300 mW cw with lowest threshold power measured at least 938 μW and highest output power of 43 mW cw.
Claim 3
Dependent Claim
83 words
A laser apparatus for producing a 1.06 μ Nd transition therein comprising: a co-doped Cr,Nd:GSGG laser material and an ouptu coupler forming a resonator; and at least one laser diode pumping Cr 3+ of said co-doped Cr,Nd:GSGG laser material between 610 and 680 nm to effect said 1.06 μ Nd transition in said Cr,Nd:GSGG, in which said pumping is at levels up to 1 W pulsed with lowest threshold power measured at least 938 μW and highest output power of 173 mW pulsed.
Claim 4
Dependent Claim
83 words
A laser apparatus for producing a 1.06 μ Nd transition therein comprising: a co-doped Cr,Nd:GSGG laser material and an ouptu coupler forming a resonator; and at least one laser diode pumping Cr 3+ of said co-doped Cr,Nd:GSGG laser material between 610 and 680 nm to effect said 1.06 μ Nd transition in said Cr,Nd:GSGG, in which said pumping is at levels up to 1 W pulsed with lowest threshold power measured at least 938 μW and highest output power of 173 mW pulsed.
Claim 5
Dependent Claim
103 words
A laser apparatus for producing a 1.06 μ Nd transition therein comprising: a co-doped Cr,Nd:GSGG laser material and an output coupler forming a resonator; and at least on laser diode pumping Cr 3+ of said co-doped Cr,Nd:GSGG laser material between 610 and 680 nm to effect said 1.06 μ Nd transition in said Cr,Nd:GSGG, in which said laser diode is at 670 nm to effect said 1.06 μ Nd transition in said Cr,Nd:GSGG and in which said pumping is at levels up to 300 mW cw with lowest threshold power measured at least 938 μW and highest output power of 43 mW cw.
Claim 6
Dependent Claim
103 words
A laser apparatus for producing a 1.06 μ Nd transition therein comprising: a co-doped Cr,Nd:GSGG laser material and an output coupler forming a resonator; and at least on laser diode pumping Cr 3+ of said co-doped Cr,Nd:GSGG laser material between 610 and 680 nm to effect said 1.06 μ Nd transition in said Cr,Nd:GSGG, in which said laser diode is at 670 nm to effect said 1.06 μ Nd transition in said Cr,Nd:GSGG and in which said pumping is at levels up to 300 mW cw with lowest threshold power measured at least 938 μW and highest output power of 43 mW cw.
Claim 7
Dependent Claim
103 words
A laser apparatus for producing a 1.06 μ Nd transition therein comprising: a co-doped Cr,Nd:GSGG laser material and an output coupler forming a resonator; and at least one laser diode pumping Cr 3+ of said co-doped Cr,Nd:GSGG laser material between 610 and 680 nm to effect said 1.06 μ Nd transition in said Cr,Nd:GSGG, in which said laser diode is at 670 nm to effect said 1.06 μ Nd transition in said Cr,Nd:GSGG and in which said pumping is at levels up to 1 W pulsed with lowest threshold power measured at least 938 μW and highest output power of 173 mW pulsed.
Claim 8
Dependent Claim
103 words
A laser apparatus for producing a 1.06 μ Nd transition therein comprising: a co-doped Cr,Nd:GSGG laser material and an output coupler forming a resonator; and at least one laser diode pumping Cr 3+ of said co-doped Cr,Nd:GSGG laser material between 610 and 680 nm to effect said 1.06 μ Nd transition in said Cr,Nd:GSGG, in which said laser diode is at 670 nm to effect said 1.06 μ Nd transition in said Cr,Nd:GSGG and in which said pumping is at levels up to 1 W pulsed with lowest threshold power measured at least 938 μW and highest output power of 173 mW pulsed.
References Cited (Backward Citations)
US4740975A
Cited
US5090019A
Cited
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