US5200249A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Via metallization for AlN ceramic electronic package
Assignee: WR Grace and Co Conn
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Filing: 1991-08-22
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Granted: 1993-04-06
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Expires: 2011-08-22
Abstract
Abstract Metallization formulations containing a mixture of AlN and metal are used to form hermetic vias in AlN dielectric bases for electronic packaging. The metal may be W, Mo, or mixtures thereof. The metallization may be cofired with the AlN dielectric base. The metallization is especially useful for making electrically conductive hermetic through-vias in AlN bases.
Inventors
- 👤 Leonard E. Dolhert
- 👤 Jack H. Enloe
- 👤 Ellice Y. Luh
- 👤 John W. Lau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:01
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/10; H10W76/12; H10W76/15; H10W76/157; H10W70/00; H10W70/01; H10W70/05; H10W70/095; H10W70/098; H10W70/60; H10W70/62; H10W70/63; H10W70/635; H10W76/60; H10W99/00; H05; H05K; H05K1/00; H05K1/02; H05K1/09; H05K1/092; H05K3/00; H05K3/40; H05K3/4038; H05K3/4053; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T428/00; Y10T428/24; Y10T428/24273; Y10T428/24322; Y10T428/24802; Y10T428/24917; Y10T428/24926
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
53 words
A dielectric aluminum nitride base for use in an electronic package, said base comprising dense aluminum nitride ceramic and at least one electrically conductive, hermetic via, said via consisting of metallization, said metallization consisting essentially of: a) aluminum nitride, and b) metal selected from the group consisting of tungsten, molybdenum and mixtures thereof.
Claim 2
Dependent Claim
53 words
A dielectric aluminum nitride base for use in an electronic package, said base comprising dense aluminum nitride ceramic and at least one electrically conductive, hermetic via, said via consisting of metallization, said metallization consisting essentially of: a) aluminum nitride, and b) metal selected from the group consisting of tungsten, molybdenum and mixtures thereof.
Claim 3
Dependent Claim
20 words
The base of claim 1 wherein said via is a through-via which traverses the entire thickness of said ceramic base.
Claim 4
Dependent Claim
11 words
The base of claim 2 comprising a plurality of said through-vias.
Claim 5
Dependent Claim
14 words
The base of claim 2 wherein said metallization consists of AlN, W, and Mo.
Claim 6
Dependent Claim
14 words
The base of claim 3 wherein said metallization consists of AlN, W, and Mo.
Claim 7
Dependent Claim
24 words
The base of claim 4 wherein said metallization consists of about: 20-70 vol. % W, 5-25 vol. % Mo, and 5-75 vol. % AlN.
Claim 8
Dependent Claim
14 words
The base of claim 6 wherein said metallization contains about 25-60 vol. % AlN.
Claim 9
Dependent Claim
23 words
The base of claim 7 wherein W and Mo are present in the metallization at a volume ratio of W:Mo of about 2-4.
Claim 10
Dependent Claim
12 words
The base of claim 8 wherein said volume ratio is about 3.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-05 | 1996-10-05 | 1997-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-05 | 2000-10-05 | 2001-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-05 | 2004-10-05 | 2005-04-06 | $7700.00 | Window Closed / Lapsed |