Transition detection circuit

Claim 2

An address transition detection (ATD) circuit comprising: (a) a pair of input NOR gates having different input voltage thresholds connected to receive an address input signal and a chip select (/CS or /CE) input signal for providing a pair of output signals which indicate whether the address input is above both thresholds, below both thresholds, or between the thresholds, (b) a latch, having a pair of inputs for receiving and latching said output signals, (c) a sequence of fast inverters connected in series from an output of the latch to form a delay line, and (d) a pair of NAND gates having inputs connected to predetermined ones of said fast inverters for detecting at at least one point the presence of an address transition resulting from said address input signal.

Claim 3

An ATD circuit as defined in claim 1 further including a third NAND gate having inputs connected to the outputs of the pair of NAND gates and an output for providing an address transition indication signal.

Claim 4

An ATD circuit as defined in claim 2 in which said pair of NAND gates are each connected to a corresponding output of the latch, and via a fast inverter, to the other output of the latch.

Claim 5

An ATD circuit as defined in claim 3, in which said predetermined ones of said fast inverters are first inverters connected to inputs of one of the pair of NAND gates, their inputs being connected to inputs of the other of the pair of NAND gates.

Claim 6

An ATD circuit as defined in claim 4 in which said input gates are a pair of NOR gates each having separate inputs connected in parallel, the parallel inputs being connected for receiving said address and said /CS signals respectively.

Claim 7

An automatic transition detection (ATD) circuit comprising: (a) an address input, (b) a chip select (/CS) or column address enable /CE input, (c) a latch having a pair of inputs and a pair of outputs, (d) first and second NOR gates each having inputs connected to the address and/CS or /CE inputs respectively, said first NOR gate having an output connected to a corresponding input of the latch and said second NOR gate having an output connected to another input of the latch through a first inverter, the NOR gates having different input voltage thresholds, (e) a sequence of fast inverters connected in series from an output of the latch, (f) a first pair of NAND gates each having plural inputs, one input of one NAND gate being connected to one output of the latch and other inputs being connected to the outputs of first predetermined ones of the sequence of inverters, one input of the other NAND gate being connected to the other output of the latch and other inputs being connected to the inputs of said predetermined ones of the sequence of inverters, (g) a pair of fast inverters one having an input connected to the said one output of the latch and its output connected to an input of said other NAND gate, and the other of said pair of fast inverters having an input connected to said other output of the latch and its output connected to an input of said one NAND gate, and (h) a second NAND gate having inputs connected to the outputs of the first pair of NAND gates, and an output for carrying a signal representing detection of an address transaction.

Claim 8

An automatic transition detection (ATD) circuit comprising: (a) an address input, (b) a chip select (/CS) or column address enable /CE input, (c) a latch having a pair of inputs and a pair of outputs, (d) first and second NOR gates each having inputs connected to the address and/CS or /CE inputs respectively, said first NOR gate having an output connected to a corresponding input of the latch and said second NOR gate having an output connected to another input of the latch through a first inverter, the NOR gates having different input voltage thresholds, (e) a sequence of fast inverters connected in series from an output of the latch, (f) a first pair of NAND gates each having plural inputs, one input of one NAND gate being connected to one output of the latch and other inputs being connected to the outputs of first predetermined ones of the sequence of inverters, one input of the other NAND gate being connected to the other output of the latch and other inputs being connected to the inputs of said predetermined ones of the sequence of inverters, (g) a pair of fast inverters one having an input connected to the said one output of the latch and its output connected to an input of said other NAND gate, and the other of said pair of fast inverters having an input connected to said other output of the latch and its output connected to an input of said one NAND gate, and (h) a second NAND gate having inputs connected to the outputs of the first pair of NAND gates, and an output for carrying a signal representing detection of an address transaction.

Claim 9

An automatic transition detection (ATD) circuit comprising: (a) a pair of input NOR gates having different input voltage thresholds connected to receive an address input signal and a chip select (/CS or /CE) input signal for providing a pair of output signals which indicate whether the address input is above both thresholds, below both thresholds, or between the thresholds, (b) a latch, having a pair of inputs for receiving and latching said output signals, (c) two sequences of fast inverters connected in series from each logical output of the latch, to form two equal length delay lines, (d) a pair of NOR gates each having inputs connected to predetermined ones of the fast inverters of a corresponding delay line for detecting at at least one point the presence of an address transition resulting from said address input signal, (e) an output NOR gate having inputs connected to the outputs of said pair of NOR gates, the output of said output NOR gate providing an ATD output lead.

Claim 10

An automatic transition detection (ATD) circuit comprising: (a) a pair of input NOR gates having different input voltage thresholds connected to receive an address input signal and a chip select (/CS or /CE) input signal for providing a pair of output signals which indicate whether the address input is above both thresholds, below both thresholds, or between the thresholds, (b) a latch, having a pair of inputs for receiving and latching said output signals, (c) two sequences of fast inverters connected in series from each logical output of the latch, to form two equal length delay lines, (d) a pair of NOR gates each having inputs connected to predetermined ones of the fast inverters of a corresponding delay line for detecting at at least one point the presence of an address transition resulting from said address input signal, (e) an output NOR gate having inputs connected to the outputs of said pair of NOR gates, the output of said output NOR gate providing an ATD output lead.

Claim 11

An ATD circuit as defined in claim 7, in which said pair of NOR gates are connected to said predetermined ones of said fast inverters spaced even numbers of fast inverters apart.